TYSEMI DAN212K

Product specification
DAN212K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
●High Conductance
0.55
●For General Purpose Switching Applications
+0.1
1.3-0.1
+0.1
2.4-0.1
●Fast Switching Speed
0.4
3
■ Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
100
V
75
V
VR(RMS)
53
V
Average Rectified Output Current
IO
200
mA
Forward Continuous Current
IFM
300
mA
Non-Repetitive Peak Reverse Voltage
VRM
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
VR
RMS Reverse Voltage
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
IFSM
@ t = 1.0s
2.0
A
1.0
Pd
225
mW
Thermal Resistance Junction to Ambient Air
Power Dissipation
RθJA
556
℃ /W
Operating and Storage Temperature Range
T,TSTG
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Reverse Breakdown Voltage
Forward Voltage
V(BR)R
VF
Leakage Current
IR
Test conditons
IR=100μA
Min
Typ
Max
75
Unit
V
IF = 1.0mA
0.715
IF = 10mA
0.855
IF = 50mA
1.0
V
IF = 150mA
1.25
VR = 75V
1.0
μA
VR = 20V
25
nA
Junction Capacitance
Cj
VR = 0, f = 1.0MHz
2
pF
Reverse Recovery Time
trr
IF = IR = 10mA,Irr = 0.1 X IR, RL = 100 Ω
4
ns
Marking
Marking
A6
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Product specification
DAN212K
■ Typical Characteristics
300 Ta= 25°C
Reverse Current, IR [nA]
Ta= 25°C
250
140
200
150
130
100
120
50
0
10
R
Reverse Voltage, V R [v]
150
110
1
2
3
5
10
20 30
Reverse Current, IR [uA]
50
100
400
350
300
250
225
1
2
3
F
5
10
20 30
Forward Current, IF [uA]
50
650
600
550
500
1
0.8
20 30
50
100
200 300
Forward Current, IF [mA]
500
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA
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0.2 0.3 0.5
1
2 3
Forward Current, IF [mA]
5
10
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
Total Capacitance, C T [pF]
1.2
0.6
10
725
Ta= 25°C
700
450
0.1
Ta= 25°C
F
Forward Voltage, VF [V]
1.4
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
100
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
1.5
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Forward Voltage, VF [mV]
485
Ta= 25°C
450
70
F
F
Forward Voltage, V F [mV]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
20
30
50
Reverse Voltage, VR [v]
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1.3
Ta= 25 °C
1.2
1.1
1
0
2
4
6
8
10
Reverse Voltage [V]
12
14 15
Figure 6. Total Capacitance
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Product specification
Reverse Recovery Time, trr [ns]
DAN212K
4
500
IR
400
Ta= 25°C
C u rre n t [m A ]
3.5
3
2.5
2
400
300
IF
200
200
100
D
1
10
OR
WA
R
300
100
1.5
-F
0
(A V
-A
D
CU
R
RE
NT
ST
EA
D
Y
Io - A V E R A
ST
VERA G E
AT
GE R R E C
E
ECTIF T I F
-m
IE D
IED C
A
URRC U R
ENTR E
- mNAT
)
mA
0
20
30
40
Reverse Current [mA]
50
0
50
0
60
50
100
100
150
150
o o
A Ambient Temperature, TA [ C]
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
Figure 8. Average Rectified Current (IF(AV))
versus Ambient Temperature (T A)
Power Dissipation, P D [mW]
500
400
300
200
100
0
0
50
100
150
Average Temperature, IO ( oC)
200
Figrue 9. Power Derating Curve
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