Product specification DAN212K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 ●High Conductance 0.55 ●For General Purpose Switching Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ●Fast Switching Speed 0.4 3 ■ Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit 100 V 75 V VR(RMS) 53 V Average Rectified Output Current IO 200 mA Forward Continuous Current IFM 300 mA Non-Repetitive Peak Reverse Voltage VRM Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current @ t = 1.0μs IFSM @ t = 1.0s 2.0 A 1.0 Pd 225 mW Thermal Resistance Junction to Ambient Air Power Dissipation RθJA 556 ℃ /W Operating and Storage Temperature Range T,TSTG -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Reverse Breakdown Voltage Forward Voltage V(BR)R VF Leakage Current IR Test conditons IR=100μA Min Typ Max 75 Unit V IF = 1.0mA 0.715 IF = 10mA 0.855 IF = 50mA 1.0 V IF = 150mA 1.25 VR = 75V 1.0 μA VR = 20V 25 nA Junction Capacitance Cj VR = 0, f = 1.0MHz 2 pF Reverse Recovery Time trr IF = IR = 10mA,Irr = 0.1 X IR, RL = 100 Ω 4 ns Marking Marking A6 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Product specification DAN212K ■ Typical Characteristics 300 Ta= 25°C Reverse Current, IR [nA] Ta= 25°C 250 140 200 150 130 100 120 50 0 10 R Reverse Voltage, V R [v] 150 110 1 2 3 5 10 20 30 Reverse Current, IR [uA] 50 100 400 350 300 250 225 1 2 3 F 5 10 20 30 Forward Current, IF [uA] 50 650 600 550 500 1 0.8 20 30 50 100 200 300 Forward Current, IF [mA] 500 Figure 5. Forward Voltage vs Forward Current VF - 10 - 800 mA http://www.twtysemi.com 0.2 0.3 0.5 1 2 3 Forward Current, IF [mA] 5 10 Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA Total Capacitance, C T [pF] 1.2 0.6 10 725 Ta= 25°C 700 450 0.1 Ta= 25°C F Forward Voltage, VF [V] 1.4 Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V 100 Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA 1.5 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Forward Voltage, VF [mV] 485 Ta= 25°C 450 70 F F Forward Voltage, V F [mV] Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA 20 30 50 Reverse Voltage, VR [v] [email protected] 1.3 Ta= 25 °C 1.2 1.1 1 0 2 4 6 8 10 Reverse Voltage [V] 12 14 15 Figure 6. Total Capacitance 4008-318-123 2 of 3 Product specification Reverse Recovery Time, trr [ns] DAN212K 4 500 IR 400 Ta= 25°C C u rre n t [m A ] 3.5 3 2.5 2 400 300 IF 200 200 100 D 1 10 OR WA R 300 100 1.5 -F 0 (A V -A D CU R RE NT ST EA D Y Io - A V E R A ST VERA G E AT GE R R E C E ECTIF T I F -m IE D IED C A URRC U R ENTR E - mNAT ) mA 0 20 30 40 Reverse Current [mA] 50 0 50 0 60 50 100 100 150 150 o o A Ambient Temperature, TA [ C] IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10 mA vs 60 mA Figure 8. Average Rectified Current (IF(AV)) versus Ambient Temperature (T A) Power Dissipation, P D [mW] 500 400 300 200 100 0 0 50 100 150 Average Temperature, IO ( oC) 200 Figrue 9. Power Derating Curve http://www.twtysemi.com [email protected] 4008-318-123 3 of 3