Diodes SMD Type Switching Diodes MMBD1201/1203/1204/1205 (KMBD1201/1203/1204/1205) SOT-23 ■ Features Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● High Conductance Ultra Fast Diode 1203 1 1 2 3 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 1205 +0.1 0.97 -0.1 2 NC 1 1204 0.55 3 +0.1 1.3 -0.1 3 +0.1 2.4 -0.1 CONNECTION DIAGRAMS 1201 0.4 3 1.Base 2 0-0.1 1 2 +0.1 0.38 -0.1 2.Emitter 1 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit V VRM 100 Average Rectified Output Current Io 200 DC Forward Current IF 600 IFP 700 Peak Reverse voltage Recurrent Peak Forward Current Peak forward surge current P ulse width = 1.0 second P ulse width = 1.0 microsecond A 2 PD 350 mW RθJA 357 ℃/W TJ 150 Tstg -55 to 150 Junction Temperature Storage temperature range 1 IFM Power Dissipation Thermal Resistance Junction to Ambient mA ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Reverse breakdown voltage VR Forward voltage VF Reverse voltage leakage current IR Test Conditions Min Typ Max IR= 100 uA 100 IF= 1 mA 550 600 IF= 10mA 660 740 IF= 100 mA 820 920 IF= 200 mA 0.87 1 Unit V IF= 300 mA 1.1 VR=20 V 25 VR=50 V 50 VR=50V,Ta = 150℃ 5 mV V nA uA Capacitance between terminals CT VR= 0 V, f= 1 MHz 2 pF Reverse recovery time trr IRR=1mA,IF=IR=10mA,RL=100Ω 4 ns ■ Marking NO. MMBD1201 MMBD1203 MMBD1204 MMBD1205 Marking 24 26 27 28 www.kexin.com.cn 1 Diodes SMD Type MMBD1201/1203/1204/1205 (KMBD1201/1203/1204/1205) ■ Typical Characterisitics 150 Ta= 25°C 140 130 120 110 1 2 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 150 100 50 0 10 20 30 50 VR - REVERSE VOLTAGE (V) 70 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA 725 Ta= 25°C 700 600 350 550 300 500 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 1.5 Ta= 25°C 1 0.8 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) www.kexin.com.cn 500 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 CAPACITANCE vs REVERSE VOLTAGE VR - 0.0 to 15 V 1.3 1.2 0.6 10 450 0.1 CAPACITANCE (pF) VVFF - FORWARD VOLTAGE (V) 200 650 400 FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 800 mA 2 250 VVFF - FORWARD VOLTAGE (mV) VFF - FORWARD VOLTAGE (mV) V 485 Ta= 25°C 450 1.4 300 Ta= 25°C 100 FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA 250 225 REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V IR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA Ta= 25°C 1.2 1.1 1 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 Diodes SMD Type MMBD1201/1203/1204/1205 (KMBD1201/1203/1204/1205) ■ Typical Characterisitics Average Rectified Current (Io) & Forward Current (IF) versus Ambient Temperature (TA) Ta= 25°C 3.5 3 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms 60 PD - POWER DISSIPATION (mW) 4 500 IR 400 -F OR WA R 300 CU RR EN TS TE AD Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 D 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) POWER DERATING CURVE 500 P PDD - POWER DISSIPATION (mW) REVERSE RECOVERY (nS) REVERSE RECOVERY TIME vs REVERSE CURRENT TRR - IR 10 mA vs 60 mA 400 300 SOT-23-3 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 www.kexin.com.cn 3