SMD Type Diodes

Diodes
SMD Type
Switching Diodes
MMBD1201/1203/1204/1205
(KMBD1201/1203/1204/1205)
SOT-23
■ Features
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
● High Conductance Ultra Fast Diode
1203
1
1
2
3
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
+0.05
0.1 -0.01
1205
+0.1
0.97 -0.1
2 NC
1
1204
0.55
3
+0.1
1.3 -0.1
3
+0.1
2.4 -0.1
CONNECTION DIAGRAMS
1201
0.4
3
1.Base
2
0-0.1
1
2
+0.1
0.38 -0.1
2.Emitter
1
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
V
VRM
100
Average Rectified Output Current
Io
200
DC Forward Current
IF
600
IFP
700
Peak Reverse voltage
Recurrent Peak Forward Current
Peak forward surge current
P ulse width = 1.0 second
P ulse width = 1.0 microsecond
A
2
PD
350
mW
RθJA
357
℃/W
TJ
150
Tstg
-55 to 150
Junction Temperature
Storage temperature range
1
IFM
Power Dissipation
Thermal Resistance Junction to Ambient
mA
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Reverse breakdown voltage
VR
Forward voltage
VF
Reverse voltage leakage current
IR
Test Conditions
Min
Typ
Max
IR= 100 uA
100
IF= 1 mA
550
600
IF= 10mA
660
740
IF= 100 mA
820
920
IF= 200 mA
0.87
1
Unit
V
IF= 300 mA
1.1
VR=20 V
25
VR=50 V
50
VR=50V,Ta = 150℃
5
mV
V
nA
uA
Capacitance between terminals
CT
VR= 0 V, f= 1 MHz
2
pF
Reverse recovery time
trr
IRR=1mA,IF=IR=10mA,RL=100Ω
4
ns
■ Marking
NO.
MMBD1201
MMBD1203
MMBD1204
MMBD1205
Marking
24
26
27
28
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Diodes
SMD Type
MMBD1201/1203/1204/1205
(KMBD1201/1203/1204/1205)
■ Typical Characterisitics
150
Ta= 25°C
140
130
120
110
1
2
3
5
10
20 30
50
I R - REVERSE CURRENT (uA)
150
100
50
0
10
20
30
50
VR - REVERSE VOLTAGE (V)
70
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
725
Ta= 25°C
700
600
350
550
300
500
1
2
3
5
10
20 30
50
IF - FORWARD CURRENT (uA)
100
1.5
Ta= 25°C
1
0.8
20
30
50
100
200 300
IF - FORWARD CURRENT (mA)
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500
0.2 0.3 0.5
1
2
3
5
I F - FORWARD CURRENT (mA)
10
CAPACITANCE vs REVERSE VOLTAGE
VR - 0.0 to 15 V
1.3
1.2
0.6
10
450
0.1
CAPACITANCE (pF)
VVFF - FORWARD VOLTAGE (V)
200
650
400
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 800 mA
2
250
VVFF - FORWARD VOLTAGE (mV)
VFF - FORWARD VOLTAGE (mV)
V
485
Ta= 25°C
450
1.4
300 Ta= 25°C
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
250
225
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
IR - REVERSE CURRENT (nA)
VVRR - REVERSE VOLTAGE (V)
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
Ta= 25°C
1.2
1.1
1
0
2
4
6
8
10
REVERSE VOLTAGE (V)
12
14 15
Diodes
SMD Type
MMBD1201/1203/1204/1205
(KMBD1201/1203/1204/1205)
■ Typical Characterisitics
Average Rectified Current (Io) &
Forward Current (IF) versus
Ambient Temperature (TA)
Ta= 25°C
3.5
3
2.5
2
1.5
1
10
20
30
40
50
REVERSE CURRENT (mA)
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
60
PD - POWER DISSIPATION (mW)
4
500
IR
400
-F
OR
WA
R
300
CU
RR
EN
TS
TE
AD
Y
Io - A
ST
VER
AT
AGE
E
REC
-m
TIFIE
D CU
A
RRE
NT mA
200
100
0
D
0
50
100
150
o
TA - AMBIENT TEMPERATURE ( C)
POWER DERATING CURVE
500
P
PDD - POWER DISSIPATION (mW)
REVERSE RECOVERY (nS)
REVERSE RECOVERY TIME vs REVERSE CURRENT
TRR - IR 10 mA vs 60 mA
400
300
SOT-23-3 Pkg
200
100
0
0
50
100
150
IO - AVERAGE TEMPERATURE ( oC)
200
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