HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN4B06J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC =− 2mA) = 0.95 (typ.) Q2: z High voltage : VCEO = 120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Base current IB −20 mA 1.BASE1 2.EMITTER 3.BASE2 4.COLLECTOR2 5.COLLECTOR1 (B1) (E) (B2) (C2) (C1) JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 0.014g (typ.) Marking Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA 45 Equivalent Circuit (Top View) 5 4 Q1 Q2 Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit PC* 300 mW Tj 150 °C Tstg −55~150 °C 1 2 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. Power dissipation per element should not exceed 200mW 1 2007-11-01 HN4B06J Q1 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― Emitter cut-off current IEBO DC current gain Characteristic Min Typ. Max Unit VCB = −120V, IE = 0 ― ― −0.1 μA ― VEB = −5V, IC = 0 ― ― −0.1 μA hFE ― VCE = −6V, IC = −2mA 200 ― 700 VCE(sat) ― IC = −10mA, IB = −1mA ― ― −0.3 V fT ― VCE =− 6V, IC =− 1mA ― 100 ― MHz Collector output capacitance Cob ― VCB =− 10V, IE = 0, f = 1MHz ― 4.0 ― pF Noise figure NF ― ― 1.0 ― dB Min Typ. Max Unit Collector-emitter saturation voltage Transition frequency Test Condition VCE = 6 V, IC = 0.1 mA f = 1 kHz, RG = 10 kΩ Q2 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit Collector cut-off current ICBO ― VCB =120V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO ― VEB = 5V, IC = 0 ― ― 0.1 μA DC current gain hFE ― VCE = 6V, IC = 2mA 200 ― 700 VCE (sat) ― IC = 10mA, IB = 1mA ― ― 0.3 V fT ― VCE = 6V, IC = 1mA ― 100 ― MHz Collector output capacitance Cob ― VCB =10V, IE = 0, f = 1MHz ― 3.0 ― pF Noise figure NF ― VCE = 6 V, IC = 0.1 mA f = 1 kHz, RG = 10 kΩ ― 1.0 ― dB Characteristic Collector-emitter saturation voltage Transition frequency Test Condition 2 2007-11-01 HN4B06J Q1 (PNP transistor) 3 2007-11-01 HN4B06J Q1(PNP transistor) 4 2007-11-01 HN4B06J Q2 (NPN transistor) 5 2007-11-01 HN4B06J Q2(NPN transistor) 6 2007-11-01 HN4B06J (Q1, Q2 Common) PC* – Ta COLLECTOR POWER DISSPATION PC (mW) 500 400 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 175 (°C) *: Total Rating 7 2007-11-01 HN4B06J RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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