BOURNS CDDFN6

PL
IA
NT
CO
M
*R
oH
S
Features
Applications
■ Lead free as standard
■ USB 2.0 & USB OTG
■ RoHS compliant*
■ Multimedia card interface
■ Low capacitance - 1.2 pF
■ SD card interface
■ No insertion loss to 2 GHz
■ SIM ports
■ ESD, EFT, surge protection
■ Gigabit Ethernet
CDDFN6-0504P - TVS/Steering Diode Array
General Information
The CDDFN6-0504P device provides ESD, EFT and surge protection for high speed data
ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge)
requirements. The Transient Voltage Suppressor array, protecting up to 4 data lines, offers a
Working Peak Reverse Voltage of 5 V and Minimum Breakdown Voltage of 6 V.
5
1
The molded packaged device will mount directly onto the industry standard DFN6 or QFN6
footprint. Bourns® Chip Diodes are easy to handle with standard pick and place equipment
and their flat configuration minimizes roll away.
3
4
6
GND
Absolute Maximum Ratings
Parameter
Peak Pulse Power (tp = 8/20 µs) (NOTE 1)
µs) (NOTE 1)
Symbol
CDDFN6-0504P
Unit
Ppk
150
W
IPP
6.5
A
Storage Temperature
TSTG
-55 to +150
ºC
Operating Temperature
TOPR
-55 to +125
ºC
Operating Supply Voltage
VDC
6
V
ESD per IEC 61000-4-2 (Air)(I/O to GND)
ESD per IEC 61000-4-2 (Contact) (I/O to GND)
VESD_IO
18
14
kV
ESD per IEC 61000-4-2 (Air)(VCC to GND)
ESD per IEC 61000-4-2 (Contact)(VCC to GND)
VESD_VCC
30
30
kV
VIO
(GND-0.5) to (VCC+0.5)
V
Peak Pulse Current (tp = 8/20
DC Voltage at any I/O Pin
Note 1. See Power Derating Curve.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CDDFN6-0504P
Unit
Maximum Reverse Standoff Voltage1
VRWM
5.0
V
Maximum Leakage Current1 @ VRWM
ID
5.0
µA
ICD
1.0
µA
VBR
6.0
V
Maximum Forward Voltage4 @ IF = 15 mA
VF
1.0
V
Typical Clamping Voltage2
VC
8.1
V
Vclamp_io
12.5
V
Vclamp_VCC
9.0
V
CIN
1.6
pF
CCROSS
0.14
pF
ΔCIN
0.06
pF
Maximum Channel Leakage Current @ VRWM
Minimum Reverse Breakdown Voltage1
@ IBV=1 mA
Typical ESD Clamping Voltage I/O per IEC 61000-4-2 +6 kV, Contact2
Typical ESD Clamping Voltage-VCC1
Maximum Channel Input Capacitance2
@ VPIN5=5 V, VPIN2=0 V, VIN=2.5 V, f=1 MHz
Maximum Channel to Channel Input
Capacitance3 @ VPIN5=5 V, VPIN2=0 V,
VIN=2.5 V, f=1 MHz
Maximum Variation of Channel Input
Capacitance @ VPIN5=5 V, VPIN2=0 V, VIN=2.5
V, f=1 MHz. (I/O Pin to GND)
Note 1. Pin 5 to Pin 2 (ground).
Note 2. Pin 1, 3, 4 or 6 to Pin 2 (ground).
Note 3. Between any two of pins 1, 3, 4, 6.
Note 4. Pin 2 (ground) to Pin 5.
*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDDFN6-0504P - TVS/Steering Diode Array
Product Dimensions
Recommended Footprint
This is a molded DFN6 package with lead free Nickel-PaladiumGold (Ni/Pd/Au) on the lead frame. It has a flammability rating of
UL 94V-0.
1.60 ± 0.05
(0.063 ± 0.002)
DATE CODE
0.35
(.014)
2.15
(.085)
0.45
(.018)
1.52
(.060)
0.89
(.035)
54
PIN 1
INDICATOR
(LASER MARK)
0.50
(.020)
1.60 ± 0.05
(0.063 ± 0.002)
XX
0.63
(.025)
1.30
(.051)
0.25 ± 0.05
(.010 ± .002)
5 PLCS.
0.50 ± 0.05
(0.020 ± 0.002)
Typical Part Marking
CDDFN6-0504P ............................................................................54
0.25 ± 0.05
(.010 ± .002)
5 PLCS.
How to Order
0.6 ± 0.05
(0.024 ± 0.002)
CD DFN-6 - 05 04P
1.1 ± 0.05
(0.043 ± 0.002)
Common Diode
Chip Diode
Package
DFN-6 = DFN-6 Package
Working Peak Reverse Voltage
05 = 5 VRWM (Volts)
0.203 ± 0.05
(0.008 ± 0.002)
Number of Lines
04P = 4 Data Lines
0.55 ± 0.05
(0.022 ± 0.002)
DIMENSIONS:
MM
(INCHES)
Typical Application
TO I/O 1
I/O-PORT
CONNECTOR
Pin Out
I/O 1
DATA LINE
DATA LINE
I/O 2
Pin
Function
1
I/O
2
GND RAIL
I/O 2
1
6
2
5
3
4
VDD RAIL
*OPTIONAL
0.1 µF
CHIP CAP.
GND
3
I/O
4
I/O
5
VCC
6
I/O
Center Tab
GND
TO I/O 3
I/O-PORT
CONNECTOR
I/O 4
I/O 3
DATA LINE
DATA LINE
TO
PROTECTED
IC
I/O 4
TO
PROTECTED
IC
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDDFN6-0504P - TVS/Steering Diode Array
Rating & Characteristic Curves
Pulse Waveform
110
100
90
80
70
60
50
40
30
20
10
0
IPP – Peak Pulse Current (% of IPP)
% of Rated Power
Power Derating Curve
0
25
50
75
100
125
120
Test Waveform Parameters
tt = 8 µs
td = 20 µs
tt
100
80
et
60
40
td = t|IPP/2
20
0
150
0
5
10
15
TA - Ambient Temperature (°C)
25
30
Forward Voltage vs. Forward Current
4.0
12
11
10
9
8
7
6
5
4
3
2
1
0
3.5
3.0
Forward Voltage (V)
Clamping Voltage (V)
Clamping Voltage vs. Peak Pulse Current
Waveform
Parameters:
tr = 8 μs
td = 20 μs
I/O pin to GND pin
2.5
2.0
1.5
Waveform
Parameters:
tr = 8 μs
td = 20 μs
1.0
I/O pin to GND pin
0.5
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
4.5
5.0
Peak Pulse Current (A)
1.45
1.6
1.40
Input Capacitance (pF)
1.50
1.8
1.4
1.2
1.0
0.8
0.6
6.5
7.0
7.5
1.35
1.30
1.25
1.20
1.15
1.10
VDD = 5 V, GND = 0 V, f = 1 MHz, T = 25 °C
0.2
6.0
Capacitance vs. Temperature
2.0
0.4
5.5
Peak Pulse Current (A)
Capacitance vs. Line Voltage
Input Capacitance (pF)
20
t – Time (µs)
VDD = 6 V, GND = 0 V, VIN = 2.5 V, f = 1 MHz
1.05
0.0
1.00
0
1
2
3
4
5
Input Voltage (V)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
20
40
60
80
Temperature (°C)
100
120
CDDFN6-0504P - TVS/Steering Diode Array
Packaging Information
The product will be dispensed in tape and reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
120 °
F
D2
W
B
D1 D
P
A
Trailer
.......
.......
End
C
Device
.......
.......
.......
.......
Leader
.......
.......
W1
Start
DIMENSIONS:
10 pitches (min.)
10 pitches (min.)
Direction of Feed
Item
Symbol
DFN-6
Carrier Width
A
1.78 ± 0.05
(0.070 ± 0.002)
Carrier Length
B
1.78 ± 0.05
(0.070 ± 0.002)
Carrier Depth
C
0.69 ± 0.05
(0.027 ± 0.002)
Sprocket Hole
d
1.55 ± 0.05
(0.061 ± 0.002)
Reel Outside Diameter
D
178
(7.008)
Reel Inner Diameter
D1
50.0
MIN.
(1.969)
Feed Hole Diameter
D2
13.0 ± 0.20
(0.512 ± 0.008)
Sprocket Hole Position
E
1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position
F
3.50 ± 0.05
(0.138 ± 0.002)
Punch Hole Pitch
P
4.00 ± 0.10
(0.157 ± 0.004)
Sprocket Hole Pitch
P0
4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center
P1
2.00 ± 0.05
(0.079 ± 0.002)
Overall Tape Thickness
T
0.20 ± 0.10
(0.008 ± 0.004)
Tape Width
W
8.00 ± 0.20
(0.315 ± 0.008)
Reel Width
W1
Quantity per Reel
MM
(INCHES)
--
14.4
MAX.
(0.567)
3000
Devices are packed in accordance with EIA standard
RS-481-A.
REV. 01/11
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.