1N5186 thru 1N5190 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/424 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. Package E WWW . Microsemi .C OM DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES • • • • • • • APPLICATIONS / BENEFITS • • • Popular JEDEC registered 1N5186 to 1N5190 series Voidless hermetically sealed glass package Triple-Layer Passivation Internal “Category I” Metallurgical bonds Working Peak Reverse Voltage 100 to 600 Volts. JAN, JANTX, and JANTXV available per MIL-PRF19500/424 Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix • • • • • MAXIMUM RATINGS • • • • • • o Fast recovery 3 Amp rectifiers 100 to 600 V Military and other high-reliability applications General rectifier applications including bridges, half-bridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi MicroNote 050 MECHANICAL AND PACKAGING • o Junction & Storage Temperature: -65 C to +175 C Thermal Resistance: 20oC/W junction to lead at 3/8 inch (10 mm) lead length from body Thermal Impedance: 1.5oC/W @ 10 ms heating time Average Rectified Forward Current (IO): 3.0 Amps @ TA = 25ºC and 0.700 Amps at TA = 150ºC Forward Surge Current: 80 Amps @ 8.3 ms half-sine Solder Temperatures: 260ºC for 10 s (maximum) • • • • • • CASE: Hermetically sealed voidless hard glass with Tungsten slugs TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb) over Copper MARKING: Body paint and part number, etc. POLARITY: Cathode band TAPE & REEL option: Standard per EIA-296 WEIGHT: 750 mg See package dimensions on last page ELECTRICAL CHARACTERISTICS 1N5186 1N5187 1N5188 1N5189 1N5190 Copyright © 2008 6-11-2008 REV C MINIMUM BREAKDOWN VOLTAGE VRWM VBR @ 50μA VOLTS 100V 200V 400V 500V 600V VOLTS 120V 240V 480V 550V 660V FORWARD VOLTAGE VF @ 9A (pulsed) MIN MAX VOLTS VOLTS 0.9V 1.5V MAXIMUM REVERSE CURRENT IR @ VRWM o o 25 C 100 C µA µA 2.0 100 MAXIMUM REVERSE RECOVERY TIME trr ns 150 200 250 300 400 Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 AVERAGE RECTIFIED CURRENT AMPS o 25 C AMPS 3.0 3.0 3.0 3.0 3.0 IO o 150 C AMPS 0.7 0.7 0.7 0.7 0.7 Page 1 1N5186 thru 1N5190 TYPE WORKING PEAK REVERSE VOLTAGE 1N5186 thru 1N5190 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION VBR VRWM VF IR trr SYMBOLS & DEFINITIONS Definition Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. WWW . Microsemi .C OM Symbol PACKAGE DIMENSIONS 1N5186 thru 1N5190 Lead Tolerance = + .002 -.003 in *Includes sections of the lead or fillet over which the lead diameter is uncontrolled. Copyright © 2008 6-11-2008 REV C Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 2