MAGX-001214-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features GaN depletion mode HEMT microwave transistor Internally matched Common source configuration Broadband Class AB operation RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) Applications L-Band Pulsed Radar Product Description The MAGX-001214-125L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Typical RF Performance at Pout = 125W Peak Freq (MHz) Pin (W) Gain (dB) Slope (dB) Id (A) Eff (%) Avg-Eff (%) RL (dB) Droop (dB) 1200 1.8 18.3 - 4.0 43.0 - -9.0 0.4 1250 1.9 18.1 - 4.2 59.0 - -11.6 0.6 1300 2.0 18.0 - 4.4 56.5 - -16.0 0.6 1350 1400 1.9 1.8 18.1 18.4 0.4 4.3 3.9 57.7 62.9 59.8 -19.0 -14.5 0.5 0.3 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=50V, Idq=100mA (pulsed), F=1200-1400 MHz, Pulse=300us, Duty=10%. Ordering Information MAGX-001214-125L00 125W GaN Power Transistor MAGX-001214-SB0PPR Evaluation Fixture 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001214-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (VDD) +65V Supply Voltage (VGS) -8 to -2V Supply Current (IDMAX) 4.8 Apk Input Power (PIN) +37 dBm Absolute Max. Junction/Channel Temp 200ºC MTTF (TJ<200°C) 114 years Pulsed Power Dissipation at 85ºC Thermal Resistance, (Tj = 70ºC) VDD = 50V, IDQ = 100mA, Pout = 125W 300us Pulse / 10% Duty Operating Temp 115 Wpk -40 to +95ºC Storage Temp -65 to +150ºC 1.0ºC/W Mounting Temperature See solder reflow profile ESD Min. - Machine Model (MM) 50V ESD Min. - Human Body Model (HBM) >250V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V IDS - 0.2 6 mA Gate Threshold Voltage VDS = 5V, ID = 15.0mA VGS (th) -5 -3.8 -2 V Forward Transconductance VDS = 5V, ID = 3.5mA GM 2.5 3.6 - S DYNAMIC CHARACTERISTICS Input Capacitance Not applicable—Input internally matched CiSS N/A N/A N/A pF Output Capacitance VDS = 50V, VGS = -8V, F = 1MHz COSS - 11 - pF Feedback Capacitance VDS = 50V, VGS = -8V, F = 1MHz CRSS - 1.1 - pF 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001214-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Symbol Min Typ Max Units RF FUNCTIONAL TESTS (VDD = 50V, IDQ = 100mA, 300us / 10% duty, 1200-1400MHz) Input Power Pout = 125Wpk (12.5W avg) PIN - 1.9 2.4 Wpk Power Gain Pout = 125Wpk (12.5W avg) GP 17.2 18.1 - dB Drain Efficiency Pout = 125Wpk (12.5W avg) ηD 54 59.8 - % Load Mismatch Stability Pout = 125Wpk (12.5W avg) VSWR-S 5:1 - - - Load Mismatch Tolerance Pout = 125Wpk (12.5W avg) VSWR-T 10:1 - - - Test Fixture Impedance Zif F (MHz) ZIF (Ω) ZOF (Ω) 1200 1250 1300 1350 1400 6.6 - j7.1 8.0 + j1.9 6.6 - j6.9 6.6 - j6.7 6.7 - j6.7 6.7 - j6.7 7.4 + j1.3 6.6 + j1.3 6.1 + j1.6 5.7 + j2.2 INPUT NETWORK OUTPUT NETWORK Zof 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001214-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 RF Power Transfer Curve (Output Power Vs. Input Power) 150 Pout (W) 125 100 1200 MHz 1300 MHz 1400 MHz 75 50 25 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Pin (W) RF Power Transfer Curve (Drain Efficiency Vs. Output Power) 75 70 Drain Eff (%) 65 60 1200 MHz 1300 MHz 1400 MHz 55 50 45 40 35 35 50 65 80 95 110 125 140 155 Pout (W) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001214-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Test Fixture Circuit Dimensions Test Fixture Assembly 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001214-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Outline Drawing CORRECT DEVICE SEQUENCING TURNING THE DEVICE ON TURNING THE DEVICE OFF 1. Set VGS to the pinch-off (VP), typically -5V 2. Turn on VDS to nominal voltage (50V) 3. Increase VGS until the IDS current is reached 4. Apply RF power to desired level 1. Turn the RF power off 2. Decrease VGS down to VP 3. Decrease VDS down to 0V 4. Turn off VGS 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.