MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Features GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) EAR99 Export Classification Application Civilian and Military Pulsed Radar Product Description The MAGX-003135-180L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 3100 3500 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-003135-180L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Typical RF Performance 60V, 300us, 10% 60V, 100us, 10% Freq. (MHz) Pin (W Peak) Pout (W Peak) Gain (dB) RL (dB) Eff (%) Freq. (MHz) Pin (W Pout (W Peak) Gain (dB) RL (dB) Eff (%) 3100 14 200 11.5 -16 41 3100 14 217 11.9 -17 43 3300 14 192 11.4 -12 40 3300 14 213 11.8 -12 42 3500 14 195 11.5 -18 41 3500 14 208 11.7 -17 42 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows: Vdd=60V, Idq=500mA (pulsed gate bias), F=3.1 - 3.5 GHz, Pulse Width=300us, Duty=10%. 1 Ordering Information MAGX-003135-180L00 MAGX-003135-SB3PPR 180W GaN Power Transistor Evaluation Fixture ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (Vdd) Supply Voltage (Vgg) +65V -8 to 0V Supply Current (Id1) Input Power (Pin) Absolute Max. Junction/Channel Temp MTTF (TJ<200°C) 10A +37 dBm 200 ºC 114 years Pulsed Power Dissipation (Pavg) at 85 ºC 192 W Thermal Resistance, (Tchannel = 200 ºC) Pulsed 500uS, 10% Duty cycle 0.6 ºC/W Operating Temp Storage Temp Mounting Temperature -40 to +95C -65 to +150C See solder reflow profile ESD Min. - Machine Model (MM) ESD Min. - Human Body Model (HBM) 50 V >250 V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units IDS - - 12 mA DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V Gate Threshold Voltage VDS = 5V, ID = 30mA VGS (th) -5 -3 -2 V Forward Transconductance VDS = 5V, ID = 3.5mA GM 5.0 - - S DYNAMIC CHARACTERISTICS Input Capacitance Not applicable - Input internally matched CGS N/A N/A N/A pF Output Capacitance VDS = 50V, VGS = -8V, F = 1MHz COSS - 26.1 30.3 pF Reverse Transfer Capacitance VDS = 50V, VGS = -8V, F = 1MHz CRSS - 2.3 4.7 pF 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Symbol Min Typ Max Units RF FUNCTIONAL TESTS (VDD = 60V, IDQ = 250mA, 300us pulse / 10% duty, 3.1 - 3.5 GHz) Output Power Pin = 14W Peak, 1.4W Ave Power Gain POUT 180 194 - W Peak Pout = 180W Peak, 18W Ave GP 10.5 11.4 - dB Drain Efficiency Pin = 14W Peak, 1.4W Ave ηD 38 41 - % Load Mismatch Stability Pin = 14W Peak, 1.4W Ave VSWR-S 5:1 - - Load Mismatch Tolerance Pin = 14W Peak, 1.4W Ave VSWR-T 10:1 - - Test Fixture Impedance Zif F (MHz) ZIF (Ω) ZOF (Ω) 3100 3.0 - j5.5 2.5 - j3.0 3300 2.9 - j5.0 2.3 - j3.1 3500 2.4 - j4.8 1.4 - j2.8 INPUT NETWORK OUTPUT NETWORK Zof 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Peak Output Power vs. Input Power 60V, Idq=0.25A, 300us/10% 250.0 Pout(Wpk) 200.0 150.0 3.1GHz 100.0 3.3GHz 3.5GHz 50.0 0.0 2.0 6.0 10.0 Pin(Wpk) 14.0 18.0 Efficiency vs. Peak Output Power 60V, Idq=0.25A, 300us/10% 60.0 Efficiency(%) 50.0 40.0 30.0 3.1GHz 20.0 3.3GHz 3.5GHz 10.0 0.0 50.0 100.0 150.0 200.0 250.0 Pout(Wpk) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Gain vs. Frequency 60V, Idq=0.25A, 300us/10% Gain (dB) 16.0 14.0 12.0 10.0 8.0 3 3.1 3.2 3.3 3.4 3.5 3.6 Freq (GHz) Return Loss vs. Frequency 60V, Idq=0.25A, 300us/10% 0.0 RL (dB) -5.0 -10.0 -15.0 -20.0 -25.0 3 3.1 3.2 3.3 Freq (GHz) 3.4 3.5 3.6 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Test Fixture Assembly 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-003135-180L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty Preliminary 27 Sept 11 Outline Drawing CORRECT DEVICE SEQUENCING TURNING THE DEVICE ON TURNING THE DEVICE OFF 1. Set VGS to the pinch-off (VP), typically -5V 2. Turn on VDS to nominal voltage (60V) 3. Increase VGS until the IDS current is reached 4. Apply RF power to desired level 1. Turn the RF power off 2. Decrease VGS down to VP 3. Decrease VDS down to 0V 4. Turn off VGS 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.