SC WILLAS 1N4150 1N4150 SIGNAL DIODE Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated * Extremely Low VF * Majority carrier conduction 1. 0 2( 26 . 0) MIN. .100 (2.55) * Extremely thin package * Low stored charge .0 .022(0.55) .018(0.45) .153(3.6) .132(3.0) .059 (1.5) MECHANICAL DATA .087(2.2) .043 (1.1) .067(1.7) * Case:Molded plastic, JEDEC SOD-323(SC-76) 1. 02 ( 26 .0 ) MIN. per MIL-STD-750, * Terminal : Solder plated, solderable .004 (0.1) Mechanical Data Pb Free Product FEATURES Dimensions (DO-35 ) .112 (2.85) Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 50 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW /°C (25°C) Forward Current IF 200 mA Junction Temp. Tj -65 to 200 °C Storage Temp. Tstg -65 to 200 °C VO 0.1AMP Sch Method 2026 * Polarity : Indicated by cathode band Dim ensions in millim eters * Mounting Position : Any * Weight : 0.000159 ounce, 0.0045 gram Electrical Characteristics (Ta=25°C) Ratings Breakdown Voltage IR= 5.0uA Peak Forward Surge Current PW = 1sec. Maximum Forward Voltage IF= 200mA Maximum Reverse Current VR= 50V VR= 20V, Tj= 150°C Maximum Junction Capacitance VR= 0, f= 1 MHz Max Reverse Recovery Time IF= -IR= 10-200mA, to 0.1 IF Markin Symbol BV Ratings Unit V 50 1.0 A MAXIMUM RATING AND ELECTRICAL CHAR IFsurge VF Rating 25oC ambient temperature unless otherwise 1.0 specified. Single phase half wave,IR 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Conditions Reverse Current pF Sy 2.5 trr Continuous Reverse Voltage Forward Voltage uA 0.10 100 ParameterCj Repetitive Peak Reverse Voltage V ns 4 I F = 10mA DC I F = 100mA DC VR = 10V DC Mean Rectifying Current Peak forward surge current Capacitance between terminals Operating Temperature Storage Temperature WILLAS ELECTRONIC CORP. T 1N4150 Electrical characteristic curves (Ta = 25°C unless specified otherwise) WILLAS ELECTRONIC CORP. WILLAS