Cree® UltraThinII™ LED Data Sheet CxxxUT2200-Sxxxxx Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications. Applications include keypad backlighting where sub-miniaturization and thinner form factors are required. FEATURES APPLICATIONS • Small Chip – 200 x 200 x 50 μm • Mobile Phone Keypads • UT LED Performance • Audio Product Display Lighting – 2.5mW min. (520-535 nm) Green • Mobile Appliance Keypads – 5.5 mW min. (455–475 nm) Blue • Automotive Applications – 8.0 mW min. (455-475 nm) Blue • Low Forward Voltage – • 2.9 V Typical at 5 mA Single Wire Bond Structure CxxxUT2200-Sxxxxx Chip Diagram .A CPR3DP Rev Data Sheet: Top View Bottom View G•SiC LED Chip 200 x 200 μm Die Cross Section SiC Substrate Bottom Surface 150 x 150 μm2 Mesa (junction) 150 x 150 μm Gold Bond Pad 90 μm Diameter InGaN Anode (+) SiC Substrate h = 50 μm Backside Metallization 80 x 80 μm Subject to change without notice. www.cree.com Cathode (-) Maximum Ratings at TA = 25°C Notes 1&3 CxxxUT2200-Sxxxxx DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range Electrostatic Discharge Threshold (HBM) -40°C to +100°C 500 V Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C460UT2200-Sxxxxx 2.7 2.9 3.1 2 21 C470UT2200-Sxxxxx 2.7 2.9 3.1 2 22 C527UT2200-Sxxxxx 2.7 3.0 3.2 2 35 Mechanical Specifications Description CxxxUT2200-Sxxxxx Dimension Tolerance P-N Junction Area (μm) 150 x 150 ± 25 Top Area (μm) 200 x 200 ± 25 Bottom Area (Substrate) (μm) 150 x 150 ± 25 50 ± 10 Au Bond Pad Diameter (μm) 90 -5, +15 Au Bond Pad Thickness (μm) 1.2 ± 0.5 80 x 80 ± 25 Chip Thickness (μm) Back Contact Metal Area (μm) Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the ESD ratings shown. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific application. Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. CPR3DP Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxUT2200-Sxxxxx LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxUT2200-Sxxxxx) orders may be filled with any or all bins (CxxxUT2200-xxxxx) contained in the kit. All radiant flux values are measured at IF = 20 mA and all dominant wavelength values are measured at IF = 5 mA. UT2-5.5 Radiant Flux Radiant Flux C460UT2200-S0550 8.0 mW 8.0 mW C460UT2200-0201 5.5 mW 455 nm C460UT2200-0202 457.5 nm C460UT2200-0203 C460UT2200-0204 462.5 nm 460 nm Dominant Wavelength 465 nm C470UT2200-S0550 C470UT2200-0201 5.5 mW 465 nm C470UT2200-0202 467.5 nm C470UT2200-0204 475 nm 472.5 nm 470 nm Dominant Wavelength UT2-8.0 Radiant Flux C470UT2200-0203 C460UT2200-S0800 C460UT2200-0205 8.0 mW 455 nm C460UT2200-0206 457.5 nm C460UT2200-0207 C460UT2200-0208 462.5 nm 460 nm Dominant Wavelength 465 nm Radiant Flux C470UT2200-S0800 C470UT2200-0205 8.0 mW 465 nm C470UT2200-0206 467.5 nm C470UT2200-0207 475 nm 472.5 nm 470 nm Dominant Wavelength UT2-2.5 C470UT2200-0208 Radiant Flux C527UT2200-S02500 C527UT2200-0201 2.5 mW 520 nm C527UT2200-0202 C527UT2200-0203 525 nm 530 nm Dominant Wavelength 535 nm Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. CPR3DP Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the UT2200 product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage 30 Dominant Wavelength Shift vs. Forward Current 8.0 6.0 25 Blue 4.0 Green 2.0 If (mA) Shift (nm) 20 15 10 0.0 -2.0 -4.0 -6.0 -8.0 5 -10.0 0 -12.0 0.0 0.5 1.0 1.5 2.0 2.5 Vf (V) 3.0 3.5 4.0 4.5 5.0 Relative Intensity vs. Forward Current 450 0 100 5 10 20 25 30 Relative Intensity vs. Peak Wavelength 90 Relative Intensity (%) Relative Intensity (%) 400 350 300 250 200 150 100 50 80 Blue 70 Green 60 50 40 30 20 10 0 0 0 5 10 15 If (mA) 20 25 30 360 380 400 420 440 460 480 500 520 540 560 580 600 620 640 Wavelength (nm) Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. 15 If (mA) CPR3DP Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the UltraThin Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. CPR3DP Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com