Cree® UltraThin® Gen 3 LEDs Data Sheet CxxxUT170-Sxxxx-31 Cree’s UltraThin® LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner form factors are required. FEATURES APPLICATIONS • Small Chip – 170 x 170 x 50 μm • Mobile Phone Keypads • Single Wire Bond Structure • UT LED Performance • Audio Product Display Lighting • Mobile Appliance Keypads • Automotive Applications • – 450 nm – 12+ mW – 460 nm – 12+ mW – 470 nm – 10+ mW – 527 nm – 4+ mW Low Forward Voltage – • 2.95 V Typical at 5 mA Class 2 ESD Rating CxxxUT170-Sxxxx-31 Chip Diagram 170 x 170 µm .CPR3GQ Rev Data Sheet: Anode (+), Ф85 µm (Bonding area, Ф70 µm) Bottom Surface 130 x 130 µm Junction, 140 x 140 µm Cathode (-) 80 x 80 µm Thickness 50 µm Top View Side View Subject to change without notice. www.cree.com Bottom View 1 Maximum Ratings at TA = 25°C Notes 1&3 CxxxUT170-Sxxxx-31 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 70 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions Electrostatic Discharge Threshold (HBM) ≤30°C / ≤85% RH 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450UT170-Sxxxx-31 2.7 2.95 3.1 2 21 C460UT170-Sxxxx-31 2.7 2.95 3.1 2 21 C470UT170-Sxxxx-31 2.7 2.95 3.1 2 22 C527UT170-Sxxxx-31 2.7 3.0 3.2 2 35 Mechanical Specifications CxxxUT170-Sxxxx-31 Description Dimension Tolerance P-N Junction Area (μm) 140 x 140 ± 25 Chip Top Area (μm) 170 x 170 ± 25 Chip Thickness (μm) 50 ± 10 130 x 130 ± 25 85 -5, +15 70 -5, +15 1.2 ± 0.5 80 x 80 ± 25 Chip Bottom Area (μm) Au Bond Pad Diameter (μm) Bonding Area Diameter (μm) Note 4 Au Bond Pad Thickness (μm) Backside Contact Metal Area (μm) Notes: 1. Maximum ratings are package dependent. The above ratings were determined using a thru-hole package (with Hysol® OS4000 encapsulant) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the thru-hole package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in thru-hole packages (with Hysol OS4000 encapsulant). The amount of die attach adhesive used will affect light output; it is recommended that the adhesive amount be optimized to meet the requirements of each specific application. Optical characteristics measured in an integrating sphere using Illuminance E. 4. Bonding Area is defined as the bond pad area exposed through the opening in the passivation layer. 5. Specifications are subject to change without notice. © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and UltraThin® are registered trademarks, and UT™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 2 CPR3GQ Rev. - (201409) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxUT170-Sxxxx-31 Radiant Flux (mW) LED chips are sorted to the radiant flux (RF) and dominant wavelength (DW) bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxUT170-Sxxxx-31) orders may be filled with any or all bins (CxxxUT170xxxx-31) contained in the kit. All RF values are measured at If = 20 mA and all DW values are measured at If = 5 mA. C450UT170-S1200-31 C450UT170-0113-31 C450UT170-0114-31 C450UT170-0115-31 C450UT170-0116-31 C450UT170-0109-31 C450UT170-0110-31 C450UT170-0111-31 C450UT170-0112-31 C450UT170-0105-31 C450UT170-0106-31 C450UT170-0107-31 C450UT170-0108-31 16 14 12 445 447.5 450 452.5 455 Radiant Flux (mW) Dominant Wavelength (nm) C460UT170-S1200-31 C460UT170-0113-31 C460UT170-0114-31 C460UT170-0115-31 C460UT170-0116-31 C460UT170-0109-31 C460UT170-0110-31 C460UT170-0111-31 C460UT170-0112-31 C460UT170-0105-31 C460UT170-0106-31 C460UT170-0107-31 C460UT170-0108-31 16 14 12 455 457.5 460 462.5 465 Dominant Wavelength (nm) © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and UltraThin® are registered trademarks, and UT™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 3 CPR3GQ Rev. - (201409) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxUT170-Sxxxx-31 (continued) Radiant Flux (mW) LED chips are sorted to the radiant flux (RF) and dominant wavelength (DW) bins shown. Sorted die sheets contain die from only one bin. Sorted die kit (CxxxUT170-Sxxxx-31) orders may be filled with any or all bins (CxxxUT170xxxx-31) contained in the kit. All RF values are measured at If = 20 mA and all DW values are measured at If = 5 mA. C470UT170-S1000-31 14 12 C470UT170-0109-31 C470UT170-0110-31 C470UT170-0111-31 C470UT170-0112-31 C470UT170-0105-31 C470UT170-0106-31 C470UT170-0107-31 C470UT170-0108-31 C470UT170-0101-31 C470UT170-0102-31 C470UT170-0103-31 C470UT170-0104-31 10 465 467.5 470 472.5 475 Dominant Wavelength (nm) Radiant Flux (mW) C527UT170-S0400-31 C527UT170-0110-31 C527UT170-0111-31 C527UT170-0112-31 C527UT170-0107-31 C527UT170-0108-31 C527UT170-0109-31 C527UT170-0104-31 C527UT170-0105-31 C527UT170-0106-31 C527UT170-0101-31 C527UT170-0102-31 C527UT170-0103-31 7 6 5 4 520 525 530 535 Dominant Wavelength (nm) © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and UltraThin® are registered trademarks, and UT™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 4 CPR3GQ Rev. - (201409) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxUT170-Sxxxx-31 These are representative measurements for the UT product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Light Intensity 800% 700% 600% 500% 400% 300% 200% 100% 0% Relative Intensity vs. Forward Current 0 10 20 30 40 If (mA) 50 60 70 Forward Current vs. Forward Voltage 70 60 If (mA) 50 40 30 20 10 0 2 3 4 5 Vf (V) Wavelength Shift vs. Forward Current DW Shift (nm) 10 5 0 -5 -10 -15 -20 -25 0 10 20 30 40 50 60 70 If (mA) © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and UltraThin® are registered trademarks, and UT™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 5 CPR3GQ Rev. - (201409) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the UltraThin Chip LED product. Actual patterns will vary slightly for each chip. © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, G•SiC® and UltraThin® are registered trademarks, and UT™ is a trademark of Cree, Inc. Hysol® is a registered trademark of Henkel Corporation. 6 CPR3GQ Rev. - (201409) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips