Product specification BAR 63-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features PIN diode for high speed switching of RF signals +0.1 2.6-0.1 1.0max Low forward resistance Very low capacitance 0.375 0.475 +0.05 0.1-0.02 For frequencies up to 3 GHz Absolute M axim um R atings T a = 25 Sym bol Value Unit Reverse voltage Param eter VR 50 V Forward current IF 100 mA P tot 250 mW T op -55 to +150 T stg -55 to +150 Total Power dissipation TS 111 O perating tem perature range Storage tem perature range Junction - soldering point 1) Junction-soldering point R thJA 235 K/W R thJS 155 K/W Note: 1.Package m ounted on alum ina 15m m x 16.7m m x 0.7m m Electrical Characteristics Ta = 25 Parameter Symbol Breakdown voltage V(BR) Conditions Min IR = 5 50 A Typ Max V Reverse current IR VR = 50 V Forward voltage VF IF = 100 mA 0.95 Diode capacitance CT VR = 0 V, f = 100 MHz 0.3 VR = 5 V, f = 1 MHz 0.21 0.3 IF = 5 mA, f = 100 MHz 1.2 2 Forward resistance rf Charge carrier life time rr Series inductance Unit 50 nA 1.2 V pF IF = 10 mA, f = 100 MHz 1 IF = 10 mA, IR = 6 mA,IR = 3mA 75 ns 2 nH Ls Marking Marking G http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification http://www.twtysemi.com [email protected] 4008-318-123 2 of 2