Diodes SMD Type Silicon PIN Diodes BAR17 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 RF attenuator for frequencies above 1 MHz 0.55 RF switch 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low distortion factor +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Long-term stability of electrical characteristics 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter S ym bol V alue R everse voltage VR 100 V F orward current IF 140 mA mW 1) P tot 250 Junction tem perature Tj 150 S torage tem perature T stg -55 to +150 T op -55 to +150 T otal power dissipation, T S 95 O perating tem perature range Junction - am bient 1) R thJA 295 Junction - soldering point R thJS 215 U nit K /W N ote 1. P ackage m ounted on alum ina 15 m m 16.7 m m 0.7 m m . Electrical Characteristics Ta = 25 Parameter Symbol Reverse current IR Forward voltage VF Diode capacitance CT Charge carrier life time Forward resistance ôL rf Test Condition Max Unit V R = 50 V 50 nA V R = 100 V 1 A I F = 100 mA Min Typ 0.91 1 V R = 50 V, f = 1 MHz 0.32 0.55 V R = 0 , f = 100 MHz 0.37 I F = 10 mA, I R = 6 mA 4 I F = 0.01 mA, f = 100 MHz 1150 I F = 0.1 mA, f = 100 MHz 160 I F = 1 mA, f = 100 MHz 23 I F = 10 mA, f = 100 MHz 3.5 V pF s Marking Marking L6 www.kexin.com.cn 1