BSS159N SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 60 V RDS(on),max 8 Ω 0.13 A IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Qualified according to AEC Q101 PG-SOT-23 • 100% lead-free; Halogen-free; RoHS compliant 3 1 2 Type Package Pb-free Halogen-free Tape and Reel Information Marking BSS159N PG-SOT-23 Yes Yes H6327: 3000 pcs/reel SGs BSS159N PG-SOT-23 Yes Yes H6906: 3000 pcs/reel sorted in VGS(th) bands 1) SGs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.23 T A=70 °C 0.18 0.92 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.23 A, V DS=60 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS ESD Class P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 1) 6 ±20 JESD22-A114 -HBM Power dissipation Value Unit A kV/µs V 0(<250V) 0.36 W -55 ... 150 °C 55/150/56 see table on next page and diagram 11 Rev. 2.2 page 1 2009-07-29 BSS159N Parameter Values Symbol Conditions Unit min. typ. max. - - 350 60 - - -3.5 -2.8 -2.4 Thermal characteristics Thermal characteristics R thJA minimal footprint K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-10 V, I D=250 µA Gate threshold voltage V GS(th) V DS=3 V, I D=26 µA Drain-source cutoff current I D(off) V DS=60 V, V GS=-10 V, T j=25 °C - - 0.1 V DS=60 V, V GS=-10 V, T j=125 °C - - 10 V µA G t Gate-source leakage l k currentt I GSS V GS=20 20 V V, V DS=0 0V - - 10 nA A On-state drain current I DSS V GS=0 V, V DS=10 V 130 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=0.07 A - 3.9 8 Ω V GS=10 V, I D=0.16 A - 1.7 3.5 |V DS|>2|I D|R DS(on)max, I D=0.16 A 0.1 0.19 - S V DS=3 V, I D=26 µA -2.6 - -2.4 V K -2.75 - -2.55 L -2.9 - -2.7 M -3.05 - -2.85 N -3.2 - -3 Transconductance g fs Threshold voltage V GS(th) sorted in bands2) J V GS(th) 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.2 page 2 2009-07-29 BSS159N Parameter Values Symbol Conditions Unit min. typ. max. - 29 39 - 7.4 10 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 3.1 5 Turn-on delay time t d(on) - 3.1 4.7 Rise time tr - 2.9 4.4 Turn-off delay time t d(off) - 9 13 Fall time tf - 9 13 Gate to source charge Q gs - 0.22 - Gate to drain charge Q gd - 0.42 - Gate charge total Qg - 1.4 - Gate plateau voltage V plateau - -0.80 - V - - 0.20 A - - 0.91 - 0.81 1.2 V - 10.4 13 ns - 3.3 4.1 nC V GS=-3 V, V DS=25 V, f =1 MHz V DD=25 V, V GS=-3…7 V, I D=0.16 A, R G=6 Ω ns Gate Charge Characteristics V DD=48 V, I D=0.16 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 2.2 T A=25 °C V GS=-3 V, I F=0.16 A, T j=25 °C V R=30 V, I F=0.16 A, di F/dt =100 A/µs page 3 2009-07-29 BSS159N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.4 0.24 0.2 0.3 ID [A] Ptot [W] 0.16 0.2 0.12 0.08 0.1 0.04 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: D =t p/T 100 103 10 µs limited by on-state resistance 100 µs 0.5 1 ms 10-1 102 0.2 0.1 ZthJA [K/W] ID [A] 10 ms 100 ms 0.05 0.02 0.01 10-2 single pulse 101 DC 10-3 100 100 101 102 VDS [V] Rev. 2.2 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2009-07-29 BSS159N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 0.6 0V -0.1 V 0.5 10 V 1V 8 0.5 V 0.1 V -0.2 V 0.2 V 0.4 0.5 V 0.2 V RDS(on) [Ω] ID [A] 0.1 V 0V 0.3 -0.1 V -0.2 V 6 4 1V 0.2 2 10 V 0.1 0 0 0 2 4 6 8 0 10 0.2 VDS [V] 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.6 0.3 0.5 0.25 0.4 0.2 gfs [S] ID [A] 0.6 0.2 0.3 ID [A] 7 Typ. transfer characteristics 0.3 0.15 0.2 0.1 0.1 0.05 0 0 -4 -3 -2 -1 0 1 VGS [V] Rev. 2.2 0.4 0.0 0.1 ID [A] page 5 2009-07-29 BSS159N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.07 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=26 µA parameter: I D 20 -2 16 -2.4 12 -2.8 VGS(th) [V] RDS(on) [Ω] max 98 % 8 typ -3.2 min typ 4 -3.6 0 -4 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 102 1 Ciss ID [mA] 0.1 M L K 26 µA 0.01 0.001 -3.5 101 J Crss 100 -3 -2.5 -2 VGS [V] Rev. 2.2 Coss C [pF] N 0 10 20 30 VDS [V] page 6 2009-07-29 BSS159N 13 Forward characteristics of reverse diode 14 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.16 A pulsed parameter: T j parameter: V DD 7 1 6 150 °C, 98% 5 25 °C 150 °C 4 25 °C, 98% 3 IF [A] VGS [V] 0.1 0.5 VDS(max) 0.2 VDS(max) 2 0.8 VDS(max) 1 0 0.01 -1 -2 -3 -4 0.001 0 0.4 0.8 0 1.2 0.5 1 1.5 2 Qgate [nC] VSD [V] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 70 V GS Qg VBR(DSS) [V] 65 60 V g s(th) 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.2 page 7 2009-07-29 BSS159N SOT-23 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 2.2 page 8 2009-07-29 BSS159N Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 9 2009-07-29