BSS314PE OptiMOS™-P 3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS(on),max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101 3 • 100% Lead-free; RoHS compliant 11 2 3 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS314PE PG-SOT-23 L6327: 3000 pcs/ reel YGs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C -1.5 T A=70 °C -1.2 -6.1 Unit A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 Ω 6 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16 V, di /dt =-200A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Rev 2.1 page 1 ±20 V 0.5 W -55 ... 150 °C 2 (2kV to 4kV) 260 °C °C 55/150/56 °C 2010-03-29 BSS314PE Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA -30 - - Gate threshold voltage V GS(th) V DS=VGS, I D=-6.3µA -1 -1.5 -2 Drain-source leakage current I DSS V DS=-30V, V GS=0 V, T j=25 °C - - -1 V DS=-30V, V GS=0V, T j=150 °C - - -100 V µA Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -5 µA Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-1.2A - 153 230 mΩ V GS=-10V, I D=-1.5A - 107 140 3 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.2 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB. Rev 2.1 page 2 2010-03-29 BSS314PE Parameter Values Symbol Conditions Unit min. typ. max. - 221 294 - 126 168 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 7 11 Turn-on delay time t d(on) - 5.1 - Rise time tr - 3.9 - Turn-off delay time t d(off) - 12.4 - Fall time tf - 2.8 - Gate to source charge Q gs - -0.7 - Gate to drain charge Q gd - -0.3 - Gate charge total Qg - -2.9 - Gate plateau voltage V plateau - -3.2 - V - - -0.5 A - - -6.1 - 0.8 1.1 V - 12.5 - ns - 4.3 - nC V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15V, V GS=-10 V, I D=-1.5 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=-15V, I D=-1.5A, V GS=0 to -10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.1 T A=25 °C V GS=0 V, I F=-1.5A, T j=25 °C V R=-15 V, I F=-1.5A, di F/dt =100 A/µs page 3 2010-03-29 BSS314PE 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≤-10 V 1.6 0.5 1.2 I D [A] P tot [W] 0.375 0.25 0.8 0.4 0.125 0 0 0 40 80 120 0 20 40 T A [°C] 60 80 100 120 140 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 103 101 1 µs 10 µs 100 µs 0.5 100 1 ms 10 2 0.2 10 ms 0.1 Z thJA [K/W] I D [A] 10-1 DC 10 -2 0.05 10 1 0.02 0.01 single pulse 100 10-3 10-4 10 10-1 -2 10 -1 10 0 10 1 10 2 V DS [V] Rev 2.1 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2010-03-29 BSS314PE 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 8 500 5V 450 7 3V 4.5 V 10 V 400 6 3.3 V 350 4V 4V R DS(on) [mΩ] I D [A] 5 4 3 300 250 200 3.5 V 4.5 V 150 2 3.3 V 1 3V 5V 10 V 100 50 2.8 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 8 6 7 5 6 5 g fs [S] I D [A] 4 3 4 3 2 25 °C 150 °C 2 1 1 0 0 0 1 2 3 4 5 Rev 2.1 0 1 2 3 4 5 6 7 8 I D [A] V GS [V] page 5 2010-03-29 BSS314PE 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.5 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=-6.3 µA parameter: I D 250 2.4 2 200 98 % typ V GS(th) [V] R DS(on) [mΩ] 1.6 98 % 150 typ 100 1.2 2% 0.8 50 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 25 °C Ciss 150 °C, 98% Coss 10 150 °C 0 I F [A] C [pF] 102 25 °C, 98% 10-1 Crss 101 10-2 100 10-3 0 5 10 15 20 V DS [V] Rev 2.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 V SD [V] page 6 2010-03-29 BSS314PE 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1.5 A pulsed parameter: T j(start) parameter: V DD 101 12 10 8 10 0 V GS [V] I AV [A] 4V 25 °C 16 V 6 10 V 100 °C 4 125 °C 2 10-1 0 100 101 102 103 0 1 t AV [µs] 2 3 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 33 V GS Qg 32 V BR(DSS) [V] 31 30 V g s(th) 29 28 Q g(th) Q sw Q gs 27 -60 -20 20 60 100 Q g ate Q gd 140 T j [°C] Rev 2.1 page 7 2010-03-29 BSS314PE SOT-23 Package Outline: Footprint: Rev 2.1 Packaging: page 8 2010-03-29 BSS314PE Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.1 page 9 2010-03-29