ZXTC4591AMC - Diodes Incorporated

A Product Line of
Diodes Incorporated
ZXTC4591AMC
COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR
Features
Mechanical Data
NPN Transistor
•
BVCEO > 40V
•
IC = 3A Continuous Collector Current
•
Low Saturation Voltage (500mV max @ 1A)
•
RSAT = 195mΩ for a low equivalent On-Resistance
PNP Transistor
•
BVCEO > -40V
•
IC = -3A Continuous Collector Current
•
Low Saturation Voltage (-500mV max @ -1A)
•
RSAT = 350mΩ for a low equivalent On-Resistance
•
hFE characterized up to 2A for high current gain hold up
•
Low profile 0.8mm high package for thin applications
•
RθJA efficient, 40% lower than SOT26
2
•
6mm footprint, 50% smaller than TSOP6 and SOT26
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
•
PPAP capable (Note 4)
•
•
•
•
•
•
•
Case: W-DFN3020-8 Type B
Nominal package height: 0.8mm
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,
Method 208 e4
Weight: 0.013 grams (approximate)
Applications
•
•
•
•
•
•
DC – DC Converters
Charging circuits
Power switches
LED Backlighting circuits
Motor control
Portable applications
C1
C2
W-DFN3020-8
Type B
C2
B1
B2
E2
NPN Transistor
Bottom View
C1
C2
E1
Top View
C2
E2
PNP Transistor
C1
C1
B2
E1
B1
Pin 1
Bottom View
Pin Out
Equivalent Circuit
Ordering Information (Note 5)
Product
ZXTC4591AMCTA
ZXTC4591AMCQTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
91A
91A
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
91A
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
91A = Product type marking code
Top view, dot denotes pin 1
1 of 9
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Parameter
Symbol
VCBO
VCEO
VEBO
ICM
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
(Notes 6 & 9)
(Notes 7 & 9)
Base Current
IC
NPN
40
40
7
3
2
2.5
PNP
-40
-40
-7
-3
-1.5
-2
300
IB
Unit
V
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Notes 6 & 9)
Power Dissipation
Linear Derating Factor
(Notes 7 & 9)
PD
(Notes 8 & 9)
(Notes 8 & 10)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
(Notes 6 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
(Notes 8 & 10)
(Notes 9 & 11)
RθJA
RθJL
TJ, TSTG
NPN
PNP
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
Unit
W
mW/°C
°C/W
°C
2
6. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
7. Same as note (6), except the device is measured at t <5 sec.
8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
9. For a dual device with one active die.
10. For dual device with 2 active die running at equal power.
11. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
2 of 9
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
VCE(SAT)
Limited
-IC Collector Current (A)
IC Collector Current (A)
Thermal Characteristics and Derating Information
DC
1
1s
100ms
10ms
0.1
1ms
8sqcm 2oz Cu
One active die
Single Pulse, Tamb=25°C
0.01
0.1
100us
1
VCE(SAT)
Limited
1
DC
1s
100ms
10ms
0.1
1ms
8sqcm 2oz Cu
One active die
Single Pulse, Tamb=25°C
0.01
0.1
10
VCE Collector-Emitter Voltage (V)
100us
1
10
-VCE Collector-Emitter Voltage (V)
NPN Safe Operating Area
PNP Safe Operating Area
8sqcm 2oz Cu
One active die
60
D=0.5
40
20
Single Pulse
D=0.2
D=0.05
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
2.0
80
10sqcm 1oz Cu
Two active die
1.5
8sqcm 2oz Cu
One active die
10sqcm 1oz Cu
One active die
1.0
0.5
0.0
0
Transient Thermal Impedance
100
125
150
225
2oz Cu
Two active die
Tamb=25°C
Tj max=150°C
Thermal Resistance (°C/W)
PD Dissipation (W)
75
Derating Curve
3.5
2.5
50
Temperature (°C)
Pulse Width (s)
3.0
25
Continuous
2.0
2oz Cu
One active die
1.5
1.0
1oz Cu
One active die
0.5
0.0
100m
1
1oz Cu
Two active die
10
100
200
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
1oz Cu
Two active die
150
125
100
75
50
2oz Cu
Once active die
2oz Cu
Two active die
25
0
0.1
Board Cu Area (sqcm)
Power Dissipation v Board Area
1oz Cu
One active die
175
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
3 of 9
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
Min
40
40
7
-
Typ
-
Max
100
100
100
Unit
V
V
V
nA
nA
nA
Static Forward Current Transfer Ratio (Note 12)
hFE
300
300
200
35
-
900
-
-
-
300
500
1.0
1.1
10
-
-
Collector-Emitter Saturation Voltage (Note 12)
VCE(sat)
Base-Emitter Turn-On Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
VBE(on)
VBE(sat)
Cobo
-
fT
150
Transition Frequency
Notes:
mV
V
V
pF
MHz
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 30V
VEB = 4V
VCE = 30V
IC = 1mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 0.5A, IB = 50mA
IC = 1A, IB = 100mA
IC = 1A, VCE = 5V
IC = 1A, IB = 100mA
VCB = 10V, f = 1MHz
VCE = 10V, IC = 50mA,
f = 100MHz
12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
4 of 9
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
NPN - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1
Tamb=25°C
150°C
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=100
100m
IC/IB=10
0.8
IC/IB=50
IC/IB=10
10m
0.6
100°C
0.4
25°C
0.2
-55°C
IC/IB=20
1m
10m
100m
0.0
1
0
1
IC Collector Current (A)
VCE=5V
150°C
1.2
IC/IB=10
-55°C
1000
1.0
VBE(SAT) (V)
100°C
800
Gain
3
VCE(SAT) v IC
VCE(SAT) v IC
1200
2
IC Collector Current (A)
25°C
600
400
-55°C
200
25°C
0.8
0.6
100°C
150°C
0.4
0
1m
10m
100m
1
IC Collector Current (A)
1m
10m
100m
1
IC Collector Current (A)
VBE(SAT) v IC
hFE v IC
1.2
VCE=5V
-55°C
1.0
VBE(ON) (V)
25°C
0.8
0.6
100°C
0.4
150°C
0.2
1m
10m
100m
1
IC Collector Current (A)
VBE(ON) v IC
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
5 of 9
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
Min
-40
-40
-7
-
Typ
-
Max
-100
-100
-100
Unit
V
V
V
nA
nA
nA
hFE
300
300
250
160
30
-
800
-
-
Collector-Emitter Saturation Voltage (Note 12)
VCE(sat)
-
-
-200
-350
-500
mV
Base-Emitter Turn-On Voltage (Note 12)
Base-Emitter Saturation Voltage (Note 12)
Output Capacitance
VBE(on)
VBE(sat)
Cobo
-
-
-1.0
-1.1
10
V
V
pF
fT
150
-
-
MHz
Static Forward Current Transfer Ratio (Note 12)
Transition Frequency
Notes:
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -30V
VEB = -4V
VCE = -30V
IC = -1mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -500mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
IC = -0.1A, IB = -1mA
IC = -0.5A, IB = -20mA
IC = -1.0A, IB = -100mA
IC = -1A, VCE = -5V
IC = -1A, IB = -50mA
VCB = -10V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
6 of 9
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
PNP - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1.5
1
Tamb=25°C
IC/IB=10
-VCE(SAT) (V)
-VCE(SAT) (V)
IC/IB=100
IC/IB=50
100m
IC/IB=20
25°C
100°C
1.0
150°C
-55°C
0.5
IC/IB=10
10m
1m
10m
100m
0.0
0.0
1
-IC Collector Current (A)
0.5
1.0
1.5
2.0
2.5
-IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
1.2
VCE=5V
800
IC/IB=10
150°C
-VBE(SAT) (V)
Gain
600
100°C
400
25°C
200
-55°C
0
1m
10m
25°C
0.8
0.6
100m
1
150°C
1m
10m
100m
1
-IC Collector Current (A)
VBE(SAT) v IC
hFE v IC
VCE=5V
100°C
0.4
-IC Collector Current (A)
1.0
-55°C
1.0
-55°C
-VBE(ON) (V)
25°C
0.8
0.6
100°C
0.4
150°C
0.2
1m
10m
100m
1
-IC Collector Current (A)
VBE(ON) v IC
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
7 of 9
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A3
A1
D
D4
D4
D2
E
E2
b
Z
e
L
W-DFN3020-8
Type B
Dim Min Max Typ
A
0.77 0.83 0.80
A1
0
0.05 0.02
A3
0.15
b
0.25 0.35 0.30
D
2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e
0.65
E
1.95 2.075 2.00
E2 0.43 0.63 0.53
L
0.25 0.35 0.30
Z
0.375
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
X
Dimensions
C
G
G1
X
X1
Y
Y1
Y2
Y1
G1
G
Y2
Y
X1
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
8 of 9
www.diodes.com
Value (in mm)
0.650
0.285
0.090
0.400
1.120
0.730
0.500
0.365
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
9 of 9
www.diodes.com
October 2012
© Diodes Incorporated