SS12F THRU SS120F Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0 A SMAF Cathode Band Top View FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications 0.110(2.80) 0.094(2.40) 0.059(1.50) 0.051(1.30) 0.150(3.80) 0.128(3.25) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.035(0.90) 0.047(1.20) 0.028(0.70) MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg 0 . 00086oz 0.199(5.05) 0.179(4.40) Dimensions in inches and (millimeters) Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS12F SS14F SS16F SS18F SS110F SS112F SS115F SS120F Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） Operating Junction Temperature Range Storage Temperature Range VF 1.0 0.55 0.70 0.3 10 A 0.85 0.90 V 0.2 5 0.1 2 mA 80 110 pF RθJA 115 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C 1） Measured 2） 30 40 IR Cj A at 1MHz and applied reverse voltage of 4 V D.C. P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas. 1 SS12F THRU SS120F Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0 A Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 Single phase half-wave 60 Hz resistive or inductive load 0.2 0.0 25 50 75 100 125 150 10 4 10 3 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 Ambient Temperature (°C) 80 100 Fig.4 Typical Junction Capacitance 500 Junction Capacitance ( pF) 20 10 1.0 SS12F/SS14F SS16F/SS18F SS110F/SS112F SS115F/SS120F 0.1 0 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 SS12F/SS14F 20 SS16F-SS120F 10 1.8 0.1 1 100 10 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 8.3 ms Single Half Sine Wave (JEDEC Method) 40 30 SS12F-SS18F SS110F-SS120F 20 10 00 1 T J =25°C 200 Instaneous Forward Voltage (V) Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 60 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) 40 20 10 100 Number of Cycles at 60Hz 1000 100 10 1 0.01 0.1 1 10 t, Pulse Duration（sec） 2 100