MURT40040 thru MURT40060R Silicon Super Fast Recovery Diode VRRM = 400 V - 600 V IF(AV) = 400 A Features • High Surge Capability • Types from 400 V to 600 V VRRM Three Tower Package • Isolation Type Package • Electrically Isolated base plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT40040(R) MURT40060(R) Unit Repetitive peak reverse voltage VRRM 400 600 V RMS reverse voltage VRMS 283 424 V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 400 -55 to 150 -55 to 150 600 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MURT40040(R) MURT40060(R) Unit Average forward current (per pkg) IF(AV) TC = 125 °C 400 400 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 3300 3300 A Maximum instantaneous forward voltage (per leg) VF IFM = 200 A, Tj = 25 °C 1.35 1.70 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 25 25 μA Tj = 125 °C 3 3 mA Maximum reverse recovery time (per leg) Trr IF=0.5 A, IR=1.0 A, IRR= 0.25 A 180 240 nS 0.35 0.35 °C/W Parameter Thermal characteristics Maximum thermal resistance, junction - case (per leg) RΘJC www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MURT40040 thru MURT40060R www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MURT40040 thru MURT40060R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3