MUR40040CT thru MUR40060CTR
Silicon Super Fast
Recovery Diode
VRRM = 400 V - 600 V
IF(AV) = 400 A
Features
• High Surge Capability
• Types from 400 to 600 V VRRM
Twin Tower Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR40040CT(R)
MUR40060CT(R)
Unit
600
V
Repetitive peak reverse voltage
VRRM
400
RMS reverse voltage
VRMS
280
420
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
400
-55 to 150
-55 to 150
600
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MUR40040CT(R)
MUR40060CT(R)
Unit
Average forward current (per pkg)
IF(AV)
TC = 125 °C
400
400
A
Peak forward surge current (per
leg)
IFSM
tp = 8.3 ms, half sine
3300
3300
A
Maximum instantaneous forward
voltage (per leg)
VF
IFM = 200 A, Tj = 25 °C
1.3
1.7
V
Maximum reverse current at rated
DC blocking voltage (per leg)
IR
25
3
25
3
μA
mA
Maximum reverse recovery time
(per leg)
Trr
Tj = 25 °C
Tj = 125 °C
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
180
240
nS
0.35
0.35
°C/W
Parameter
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
RΘJC
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MUR40040CT thru MUR40060CTR
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MUR40040CT thru MUR40060CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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