GAP05SLT80-220 - GeneSiC Semiconductor

GAP05SLT80-220
Silicon Carbide Power
Schottky Diode
VRRM
IF
QC
Features
Package





 RoHS Compliant
Industry’s leading low leakage currents
175 °C maximum operating temperature
Positive temperature coefficient of VF
Extremely fast switching speeds
Superior figure of merit QC/IF
=
=
=
8000 V
50 mA
8 nC
PIN 1
2
1
PIN 2
Advantages
Applications







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Low reverse leakage current at operating temperature
Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Low reverse recovery current
Low device capacitance
Low reverse leakage current at operating temperature
Voltage Multiplier
Ignition/Trigger Circuits
Oil/Downhole
Lighting
Defense
Electrical Specifications
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Power dissipation
Operating and storage temperature
Symbol
VRRM
IF
IF(RMS)
Ptot
Tj , Tstg
Conditions
Values
8000
50
87
0.2
-55 to 175
TC = 25 °C
Unit
V
mA
mA
W
°C
Electrical Characteristics
Parameter
Symbol
Diode forward voltage
VF
Reverse current
IR
Total capacitance
C
Sep 2014
Conditions
IF = 50 mA, Tj = 25 °C
IF = 50 mA, Tj = 175 °C
VR = 8000 V, Tj = 25 °C
VR = 8000 V, Tj = 125 °C
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
4.6
12
3.8
5.3
25
8
6
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
max.
Unit
V
µA
pF
Page 1 of 3
GAP05SLT80-220
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Typical Junction Capacitance vs Reverse
Voltage Characteristics
Sep 2014
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
Page 2 of 3
GAP05SLT80-220
Package Dimensions:
PACKAGE OUTLINE
0.440 (11.18)
0.052 (1.32)
0.036 (0.91)
K
A
0.280 (7.11)
GAP05SLT80
0.085 (2.16)
0.570 (14.48)
XXXXXX
Lot Code
0.052 (1.32)
0.036 (0.91)
0.360 (9.14)
0.360 (9.14)
0.570 (14.48)
0.570 (14.48)
0.25 (6.35)
0.016 (0.41)
0.016 (0.41)
0.080 (2.03)
0.080 (2.03)
0.180 (4.57)
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Revision History
Date
2014/09/15
Revision
1
Comments
Initial Release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Sep 2014
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
Page 3 of 3
GAP05SLT80-220
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/rectifiers/GAP05SLT80-220_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GAP05SLT80-220.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.1
$
*
$Date:
15-SEP-2014
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GAP05SLT80-220 SPICE Model
.SUBCKT GAP05SLT80_220 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.81); Temperature Dependant Resistor
D1 INT KATHODE GAP05SLT80_220_25C
.MODEL GAP05SLT80_220_25C D; Model of GAP05SLT80-220 Device at 25 C
+ IS
14.067E-15
+ N
1.3760
+ RS
42.6
+ IKF
157.39E-6
+ EG
1.2
+ XTI
-85
+ CJO
21.838E-12
+ M
0.258
+ VJ
3.198
+ BV
9000
+ IBV
1E-3
+ TT
1.0000E-10
+ VPK
8000
+ IAVE
3E-2
+ TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.ENDS
*
* End of GAP05SLT80-220 SPICE Model
Sep 2014
http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers
Page 1 of 1