Electrical Datasheet* GB02SLT06-CAL Silicon Carbide Power Schottky Diode Chip Features 650 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Operating and storage temperature Symbol VRRM IF IF IF(RMS) Tj , Tstg Conditions Values 650 5 2 3 -55 to 175 TC = 25 °C TC ≤ 160 °C TC ≤ 160 °C Unit V A A A °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC Switching time ts Total capacitance Conditions min. IF = 2 A, Tj = 25 °C IF = 2 A, Tj = 175 °C VR = 650 V, Tj = 25 °C VR = 650 V, Tj = 175 °C IF ≤ IF,MAX VR = 400 V dIF/dt = 200 A/μs VR = 400 V Tj = 175 °C Values typ. 1.45 2.6 5 50 9 C VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C < 17 131 12 RthJC Assuming TO-220 package 2.3 max. Unit V µA nC ns pF Thermal Characteristics Thermal resistance, junction - case °C/W *For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC Semiconductor). Sept 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 1 of 2 Electrical Datasheet* GB02SLT06-CAL Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 4: Typical Switching Energy vs Reverse Voltage Characteristics Revision History Date Revision Comments 2014/09/12 1 Updated Electrical Characteristics 2013/11/06 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Sept 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 2 of 2 GB02SLT06-CAL SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GB02SLT06-CAL device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 06-NOV-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/hit-sic/baredie * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GB02SLT06-CAL SPICE Model * .SUBCKT GB02SLT06 ANODE KATHODE D1 ANODE KATHODE GB02SLT06 D2 ANODE KATHODE GB02SLT06_PIN .MODEL GB02SLT06 D + IS 2.05E-15 RS 0.282 + TRS1 0.0054 TRS2 3E-05 + N 1 IKF 251 + EG 1.2 XTI -1.8 + CJO 1.61E-10 VJ 0.4508 + M 1.586 FC 0.5 + TT 1.00E-10 BV 650 + IBV 1.00E-03 VPK 650 + IAVE 2 TYPE SiC_Schottky + MFG GeneSiC_Semi .MODEL GB02SLT06_PIN D + IS 1.54E-25 RS 0.39 + TRS1 -0.003 N 3.941 + EG 3.23 IKF 19 + XTI 0 FC 0.5 + TT 0 BV 650 + IBV 1.00E-03 VPK 650 + IAVE 10 TYPE SiC_PiN .ENDS * * End of GB02SLT06-CAL SPICE Model Sept 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 1 of 1