Datasheet

Electrical Datasheet*
GB02SLT06-CAL
Silicon Carbide Power
Schottky Diode Chip
Features







650 V Schottky rectifier
175 °C maximum operating temperature
Temperature independent switching behavior
Superior surge current capability
Positive temperature coefficient of VF
Extremely fast switching speeds
Superior figure of merit QC/IF
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
Continuous forward current
RMS forward current
Operating and storage temperature
Symbol
VRRM
IF
IF
IF(RMS)
Tj , Tstg
Conditions
Values
650
5
2
3
-55 to 175
TC = 25 °C
TC ≤ 160 °C
TC ≤ 160 °C
Unit
V
A
A
A
°C
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Diode forward voltage
VF
Reverse current
IR
Total capacitive charge
QC
Switching time
ts
Total capacitance
Conditions
min.
IF = 2 A, Tj = 25 °C
IF = 2 A, Tj = 175 °C
VR = 650 V, Tj = 25 °C
VR = 650 V, Tj = 175 °C
IF ≤ IF,MAX
VR = 400 V
dIF/dt = 200 A/μs
VR = 400 V
Tj = 175 °C
Values
typ.
1.45
2.6
5
50
9
C
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
< 17
131
12
RthJC
Assuming TO-220 package
2.3
max.
Unit
V
µA
nC
ns
pF
Thermal Characteristics
Thermal resistance, junction - case
°C/W
*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC
Semiconductor).
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 1 of 2 Electrical Datasheet*
GB02SLT06-CAL
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 4: Typical Switching Energy vs Reverse Voltage
Characteristics
Revision History
Date
Revision
Comments
2014/09/12
1
Updated Electrical Characteristics
2013/11/06
0
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 2 of 2 GB02SLT06-CAL
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the GB02SLT06-CAL device.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
06-NOV-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
http://www.genesicsemi.com/index.php/hit-sic/baredie
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB02SLT06-CAL SPICE Model
*
.SUBCKT GB02SLT06 ANODE KATHODE
D1 ANODE KATHODE GB02SLT06
D2 ANODE KATHODE GB02SLT06_PIN
.MODEL GB02SLT06 D
+ IS
2.05E-15
RS
0.282
+ TRS1
0.0054
TRS2
3E-05
+ N
1
IKF
251
+ EG
1.2
XTI
-1.8
+ CJO
1.61E-10
VJ
0.4508
+ M
1.586
FC
0.5
+ TT
1.00E-10
BV
650
+ IBV
1.00E-03
VPK
650
+ IAVE
2
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semi
.MODEL GB02SLT06_PIN D
+ IS
1.54E-25
RS
0.39
+ TRS1
-0.003
N
3.941
+ EG
3.23
IKF
19
+ XTI
0
FC
0.5
+ TT
0
BV
650
+ IBV
1.00E-03
VPK
650
+ IAVE
10
TYPE
SiC_PiN
.ENDS
*
* End of GB02SLT06-CAL SPICE Model
Sept 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 1 of 1