CQ-209B

[CQ-209B]
CQ-209B
High-Speed Small Current Sensor
Features
CQ-209B is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional
to the AC/DC current. Quantum well ultra-thin film InAs (Indium Arsenide) is used as the Hall sensor, which
enables the high-accuracy and high-speed current sensing. Simple AI-Shell package with the Hall sensor,
magnetic core, and primary conductor realizes the space-saving and high reliability.
Features
- Unidirectional type
- Electrical isolation between the primary conductor and the sensor signal
- 5V single supply operation
- Ratiometric output
- Low variation and low temperature drift of sensitivity and offset voltage
- Low noise output: 2.1mVrms (max.)
- Fast response time: 1μs (typ.)
- Small-sized surface mount package, halogen free
Functional Block Diagram
N
Magnetic
Core
Amplifier
Hall
Sensor
Buffer
VSS
Compensation
Bias Unit
EEPROM Unit
DATA_IO
P
VOUT
VDD
SCLK
Figure 1. Functional block diagram of CQ-209B
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Circuit Blocks
Table 1. Explanation of circuit blocks
Circuit Block
Hall Sensor
Amplifier
Function
Hall element which detects magnetic flux density generated from the measured current.
Amplifier of Hall element’s output.
Output buffer with gain. This block outputs the voltage (VOUT) proportional to the current
applied to the primary conductor.
Compensation circuit which adjusts the temperature drifts of sensitivity and offset voltage.
Drive circuit for Hall element.
Non-volatile memory for setting adjustment parameters. The parameters are adjusted before
the shipment.
Magnetic core which gathers the magnetic flux density to the Hall element.
Buffer
Compensation
Bias Unit
EEPROM Unit
Magnetic Core
Typical Output Characteristics
VOUT
VDD
P
N
→
CQ-209B
→
(Top View)
IIN
VDD
4.55V
VOUT
VsatH
VsatL
−INS
P→N
Figure 2. Typical output characteristics of CQ-209B
0
IIN
Pin/Function
Table 2. Pin-out description
No.
Name
I/O
1
2
3
4
5
6
7
DATA_IO
VDD
VSS
VOUT
SCLK
N
P
O
I
I
7
Description
Test pin (connect to ground)
Power supply pin (5V)
Ground pin (0V)
Analog output pin
Test pin (connect to ground)
Primary current pin (−)
Primary current pin (+)
6
CQ-209B
(Top View)
1
2
3 4 5
Figure 3. Pin-out diagram
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Absolute Maximum Ratings
Table 3. Absolute maximum ratings
Parameter
Supply Voltage
Analog Output Current
Storage Temperature
Symbol
VDD
IOUT
Tstg
Min.
−0.3
−1
−40
Max.
6
1
125
Units
V
mA
C
Notes
VDD
VOUT
WARNING: Operation at or beyond these limits may result in permanent damage to the device. Normal
operation is not guaranteed at these extremes.
Primary Current Derating Curve
Conditions: Mounted on the test board complying with the EIA/JEDEC Standards (EIA/JESD51.)
25
IRMSmax [A]
20
15
10
5
0
-60
-40
-20
0
20
40
60
80
100
o
Ta [ C]
Figure 4. Primary current derating curve of CQ-209B
Recommended Operating Conditions
Table 4. Recommended operating conditions
Parameter
Supply Voltage
Output Current
Output Load
Capacitance
Operating Ambient
Temperature
Symbol
VDD
IOUT
Min.
4.5
−0.5
CL
Ta
−40
Typ.
5.0
Max.
5.5
0.5
Units
V
mA
Notes
VOUT
100
pF
VOUT
90
C
NOTE: Electrical characteristics are not guaranteed when operated at or beyond these conditions.
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Electrical Characteristics
Table 5. Electrical characteristics
Conditions (unless otherwise specified): Ta=25C，VDD=5V
Parameter
Maximum Primary Current
(RMS)
Symbol
IRMSmax
Current Consumption
IDD
Sensitivity*
Vh
Offset Voltage*
Vof
Linear Sensing Range
INS
Linearity Error*
ρ
Rise Response Time
tr
Fall Response Time
tf
Output Noise**
Maximum Temperature Drift
of Sensitivity
Maximum Temperature Drift
of Offset voltage
Ratiometricity Error of
Sensitivity**
Ratiometricity Error of Offset
Voltage**
Primary Conductor
Resistance
Conditions
Ta=−40~90C
Min.
Typ.
−20
No Loads
IIN=0A
Vof-dmax
Units
0
A
9
mA
112.7
115.0
117.3
mV/A
4.440
4.550
4.660
V
−35
0
A
−1
1
%F.S.
IIN 90% → VOUT 90%
CL=100pF
IIN 10% → VOUT 10%
CL=100pF
1
μs
1
μs
VNrms
Vh-dmax
Max.
2.1
Variation ratio to Vh(Ta=35C)
Ta=35~90C
Variation ratio to Vh(Ta=35C)
Ta=−40~35C
Variation from Vof(Ta=35C)
Ta=−40~90C, IIN=0A
mVrms
±1
%
±2
±30
mV
Vh-R
VDD=4.5V~5.5V
−1
1
%
Vof-R
VDD=4.5V~5.5V
IIN=0A
−1
1
%
R1
340
μΩ
Isolation Voltage**
VINS
AC 50/60Hz, 60s
2.5
kV
Isolation Resistance**
RINS
DC 1kV
500
MΩ
* These parameters can drift by the values described in ‘Reliability Tests’ section over the lifetime of the product.
** These characteristics are guaranteed by design.
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Characteristics Definitions
(1) Sensitivity Vh [mV/mT], offset voltage Vof [V]
Sensitivity is defined as the slope of the approximate straight line calculated by the least square method,
using the data of VOUT voltage (VOUT) when the primary current (IIN) is swept within the range of linear
sensing range (INS). Offset voltage is defined as the intercept of the approximate straight line above.
(2) Linearity error ρ [%F.S.]
Linearity error is defined as the ratio of the maximum error voltage (Vd) to the full scale (F.S.), where Vd is
the maximum difference between the VOUT voltage (VOUT) and the approximate straight line calculated in
the sensitivity and offset voltage definition. Definition formula is shown in below:
ρ = Vd / F.S. × 100
NOTE) Full scale (F.S.) is defined by the multiplication of the linear sensing range and sensitivity (See
Figure 5).
Approximate straight line
by least square method
VOUT(V)
Vd
−|INS|
F.S.
=Vh×|INS|
0
IIN(A)
Figure 5. Output characteristics of CQ-209B
(3) Ratiometric error of sensitivity Vh-R [%] and ratiometric error of offset voltage Vof-R [%]
Output of CQ-209B is ratiometric, which means the values of sensitivity (Vh) and offset voltage (Vof) are
proportional to the supply voltage (VDD). Ratiometric error is defined as the difference between the Vh (or
Vof) and ideal Vh (or Vof) when the VDD is changed from 5.0V to VDD1 (4.5V<VDD1<5.5V). Definition formula is
shown in below:
Vh-R = 100 × {(Vh(VDD = VDD1) / Vh(VDD = 5V)) − (VDD1 / 5)} / (VDD1 / 5)
Vof-R = 100 × {(Vof(VDD = VDD1) / Vof(VDD = 5V)) − (VDD1 / 5)} / (VDD1 / 5)
(4) Temperature drift of sensitivity Vh-d [%]
Temperature drift of sensitivity is defined as the drift ratio of the sensitivity (Vh) at Ta=Ta1 (−40C<Ta1<90C)
to the Vh at Ta=35C, and calculated from the formula below:
Vh-d = 100 × (Vh(Ta1) / Vh(35C) − 1)
Maximum temperature drift of sensitivity (Vh-dmax) is defined as the maximum value of |Vh-d| through the
defined temperature range.
Reference data of the temperature drift of sensitivity of CQ-209B is shown in Figure 6.
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(5) Temperature drift of offset voltage Vof-d [mV]
Temperature drift of offset voltage is defined as the drift value between the offset voltage (Vof) at Ta=Ta1
(−40C<Ta1<90C) and the Vof at Ta=35C, and calculated from the formula below:
Vof-d = Vof(Ta = Ta1) − Vof(Ta = 35C)
Maximum temperature drift of offset voltage (Vof-dmax) is defined as the maximum value of |Vof-d| through the
defined temperature range.
Reference data of the temperature drift of offset voltage of CQ-209B is shown in Figure 7.
40
5
VDD=5.0V
IIN=-35~0A
4
3
20
2
1
Vof-d [mV]
Vh-d [%]
VDD=5.0V
IIN=0A
30
0
-1
-2
10
0
-10
-20
-3
-30
-4
-5
-40
-60 -40 -20
0
20
40
60
-60 -40 -20
80 100 120
0
20
40
60
80 100 120
Ta [°C]
Ta [°C]
Figure 6. Temperature drift of sensitivity
of CQ-209B
(for reference, n=1)
Figure 7. Temperature drift of offset voltage
of CQ-209B
(for reference, n=3)
(6) Rise response time tr [μs] and fall response time tf [μs]
Rise response time (or fall response time) is defined as the time delay from the 90% (or 10%) of input
primary current (IIN) to the 90% (or 10%) of the VOUT voltage (VOUT) under the pulse input of primary
current (see Figure 8.)
IIN
IIN
90% IIN
10% IIN
Time
Time
VOUT
VOUT
90% Vout
10% Vout
tf
tr
Time
Time
Rise response time (tr)
Fall response time (tf)
Figure 8. Definition of response time
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Package Dimensions
Unit:mm
Note1) The tolerances of dimensions without any mention are ±0.1mm.
Note2) An adhesive material (RoHS compliant, halogen free) is applied on a part of “Adhesive Area” to hold the magnetic
core.
Terminals: Cu
Plating for Terminals: Sn (100%)
RoHS compliant, halogen free
Figure 9. Package outline
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Recommended Land Pattern (Reference Only)
Unit:mm
Figure 10. Recommended land pattern of CQ-209B
Note) If 2 or more trace layers are used as the current path, please make enough number of through-holes to flow current
between the trace layers.
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Application Circuits
+5V
6
N
IN
SCLK
5
4
VOUT
CQ-209B
3
VSS
VDD
DATA_IO
P
2
(b)
R1
(c)
RF
AIN
(a)
R2
A/D
CF
VSS
0.1F
R2
VREF
R1
1
7
(a) 0.1F bypass capacitor should be placed near by the CQ-209B
(b) Ratiometric output of CQ-209B enables an A/D system to improve the A/D conversion error caused by the fluctuation
of supply voltage. This is achieved by making the supply voltage of CQ-209B and the reference voltage of A/D
converter common.
Voltage dividers (R1 and R2) are required if the reference voltage of A/D converter is less than +5V.
For example, if the reference voltage of A/D converter is +3.3V which is its supply voltage level, R1=20kΩ , R2=39kΩ
are recommended. If the reference voltage of A/D converter is different from its supply voltage level, one more
voltage divider is required.
(c) Add a low-pass filter if it is necessary.
Figure 11. Recommended circuits when using A/D converter
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Markings
Production information is printed on the package surface by laser marking. Markings consist of 12 characters (6
characters × 2 lines).
Q209B＊
Product Code（CQ-209B）＋Option
＊＊＊＊＊＊
Option（3Characters including blank）
Production Date (Y/M/D)
Figure 12. Markings of CQ-209B
Table 6. Production date code table
Last Number of Year
Month
Day
Character
Number
Character
0
0
C
Jan.
1
1
1
1
D
Feb.
2
2
2
2
E
Mar.
3
3
3
3
F
Apr.
4
4
4
4
G
May.
5
5
5
5
H
Jun.
6
6
6
6
J
Jul.
7
7
7
7
K
Aug.
8
8
8
8
L
Sep.
9
9
9
9
M
Oct.
0
10
N
Nov.
A
11
P
Dec.
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Month
Character
Day
B
12
C
13
D
14
E
15
F
16
G
17
H
18
J
19
K
20
L
21
N
22
P
23
R
24
S
25
T
26
U
27
V
28
W
29
X
30
Y
31
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Reliability Tests
Table 7. Test parameters and conditions of reliability test
No.
Test Parameter
1
High Humidity Storage Test
2
High Temperature Bias Test
3
4
Test Conditions
n
Test Time
【JEITA EIAJ ED-4701 102】
Ta=85C, 85%RH, continuous operation
22
1000h
【JEITA EIAJ ED-4701 101】
Ta=125C, continuous operation
22
1000h
High Temperature Storage Test
【JEITA EIAJ ED-4701 201】
Ta=150C
22
1000h
Low Temperature Storage Test
【JEITA EIAJ ED-4701 202】
Ta= −55C
22
1000h
5
Heat Cycle Test
【JEITA EIAJ ED-4701 105】
−40C ↔ 25C ↔125C
30min. ↔ 5min. ↔30min.
Tested in vapor phase
22
100 cycles
6
Vibration Test
【JEITA EIAJ ED-4701 403】
Vibration frequency: 10~55Hz (1min.)
Vibration amplitude: 1.5mm (x, y, z directions)
5
2h for each direction
Tested samples are pretreated as below before each reliability test:
Desiccation: 125C /24h → Moisture Absorption: 85C/85%RH/168h → Reflow: 3 times (JEDEC Level1)
Criteria：
Products whose drifts before and after the reliability tests do not exceed the values below are considered to be in
spec.
Sensitivity Vh (Ta=25C)
： Within ±1.5%
Offset Voltage Vof (Ta=25C)
： Within ±100mV
Linearity ρ (Ta=25C)
： Within ±1%
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Precautions
<Storage Environment>
Products should be stored at an appropriate temperature and humidity (5 to 35C, 40 to 85%RH).
Keep products away from chlorine and corrosive gas.
<Long-term Storage>
Long-term storage may result in poor lead solderability and degraded electrical performance even under proper
conditions. For those parts, which stored long –term shall be check solderability before it is used.
For storage longer than 2 years, it is recommended to store in nitrogen atmosphere. Oxygen of atmosphere oxidizes
leads of products and lead solderability get worse.
<Other precautions>
1) This product should not be used under the environment with corrosive gas including chlorine or sulfur.
2) This product is lead (Pb) free. All leads are plated with 100% tin. Do not store this product alone in high
temperature and high humidity environment. Moreover, this product should be mounted on substrate within
six months after delivery.
3) This product is damaged when it is used on the following conditions:
・Supply voltage is applied in the opposite way.
・Overvoltage which is larger than the value indicated in the specification.
4) This product will be damaged if it is used for a long time with the current (effective current) which exceeds the
current rating. Careful attention must be paid so that maximum effective current is smaller than current rating.
5) Since magnetic cores are fragile parts, do not use the fallen products.
6) The characteristic can change by the influences of nearby current and magnetic field. Please make sure of the
mounting position.
As this product contains gallium arsenide, observe the following procedures for safety.
1) Do not alter the form of this product into a gas, powder, liquid, through burning, crushing, or chemical processing.
2) Observe laws and company regulations when discarding this product.
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IMPORTANT NOTICE
0. Asahi Kasei Microdevices Corporation (“AKM”) reserves the right to make changes to the information contained in
this document without notice. When you consider any use or application of AKM product stipulated in this
document (“Product”), please make inquiries the sales office of AKM or authorized distributors as to current status
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of AKM.
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