SBU8A - SBU8M - Diotec Electronics

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DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
8 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
C
A
C1
C2
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
D
D3
D2
_
SURGE OVERLOAD RATING TO 400 AMPS PEAK
+
D
D1
A1
THRU-HOLE FOR EASY HEAT SINK MOUNTING
L
UL RECOGNIZED - FILE #E124962
RoHS COMPLIANT
L1
B1
B
MECHANICAL DATA
MILLIMETERS
INCHES
SYM
Case: Molded Epoxy (UL Flammability Rating 94V-0)
Terminals: Round silver plated pins
MIN
MAX
A
6.6
7.1
A1
4.7
5.2
0.185
0.205
1.22
1.32
0.048
0.052
B
B1
Soldering: Per MIL-STD 202 Method 208 guaranteed
C
Polarity: Marked on case
0.280
5.59
0.180
0.220
23.24
0.895
0.915
C1
4.2
4.7
0.165
0.185
3.6
4.1
0.140
0.160
D
Weight: 0.3 Ounces (8 Grams)
MAX
0.260
C2
D1
Mounting Position: Any. Max. mounting torque = 5 in lb
4.57
22.7
MIN
n/a
19.3
n/a
0.760
10.3
11.3
0.405
0.455
D2
1.7
2.2
0.065
0.085
D3
16.5
17.8
0.660
0.700
L
25.4
n/a
1.0
6.8
0.180
L1
4.57
_
+
SERIES SBU8A - SBU8M
n/a
0.260
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, 60Hz, resistive or inductive load. For capacitive loads, derate current by 20%.
PARAMETER (TEST CONDITIONS)
RATINGS
SYMBOL
Series Number
SBU
8A
SBU
8B
SBU
8D
UNITS
SBU
8G
SBU
8J
SBU
8K
SBU
8M
Maximum DC Blocking Voltage
VRM
50
100
200
400
600
800
1000
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
VRRM
50
100
200
400
600
800
1000
Maximum Peak Recurrent Reverse Voltage
Average Forward Rectified Current
o
TC = 100 C (Notes 1, 3)
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
O
Superimposed on Rated Load (JEDEC Method). TJ = 150 C
Maximum Forward Voltage (Per Diode) at 8 Amps DC
o
@ TA = 25 C
Maximum Average DC Reverse Current
o
At Rated DC Blocking Voltage
@ TA = 125 C
Junction to Ambient (Note 2)
Typical Thermal Resistance
Junction to Case (Note 1)
Minimum Insulation Breakdown Voltage (Circuit to Case)
Operating and Storage Temperature Range
IO
8
IFSM
400
VFM
0.95 (Typ. 0.90)
VOLTS
AMPS
VOLTS
RqJA
RqJC
1
50
16
3
°C/W
VISO
2500
VOLTS
TJ ,TSTG
-55 to +150
IRM
NOTES: (1) Bridge mounted on 3.2" sq. x 0.12" thick (8.2cm sq. x 0.3cm) aluminum plate
(2) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and bridge lead length of 0.375" (9.5mm)
(3) Bolt bridge on heat sink with #6 screw, using silicon thermal compound between bridge and mounting surface for maximum heat transfer.
mA
°C
Data Sheet No. BSBU-800-1D
E29
DIOTEC ELECTRONICS CORP.
Data Sheet No. BSBU-800-2C
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
8 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES SBU8A - SBU8M
400
NOTE 1
350
300
60Hz
250
200
150
100
o
Temperature, C
50
FIGURE 1. FORWARD CURRENT DERATING CURVE
10
1
100
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
50
10
10
1.0
1.0
0.1
0.1
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0.01
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
400
NOTE 4
100
NOTES
(1) Case Temperature, TC, With Bridge Mounted on
3.2" Sq. x 0.12" Thick (8.2cm Sq. x 0.3cm)
Aluminum Plate
o
(2) TJ = 150 C
10
1
10
100
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
E30
o
(3) TJ = 25 C; Pulse Width = 300mSec; 1% Duty Cycle
o
(4) TJ = 25 C; f = 1 MHz; Vsig = 50mVp-p
3.1 08sbu