DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-600-1B ABDB-600-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES PRV Ratings from 50 to 1000 Volts ACTUAL SIZE SERIES DB600 - DB610 and ADB604 - ADB608 DT DB602 Surge overload rating to 125 Amps peak Reliable low cost molded plastic construction BH Ideal for printed circuit board applications AC LL UL RECOGNIZED - FILE #E124962 AC MECHANICAL DATA _ LD + Case: Molded plastic, U/L Flammability Rating 94V-0 D1 Terminals: Round silver plated copper pins MILLIMETERS SYM Soldering: Per MIL-STD 202 Method 208 guaranteed Polarity: Marked on side of case; positive lead at beleveled corner Mounting Position: Any. Through hole provided for #6 screw Weight: 0.13 Ounces (3.6 Grams) INCHES MIN MAX MIN + MAX D1 BL 14.7 15.7 0.58 0.62 BH 5.8 6.9 0.23 0.27 D1 10.3 11.3 0.405 0.445 LL LD 19.0 1.0 n/a 1.1 0.75 0.039 n/a 0.042 BL _ BL MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS Ratingsat25°Cambienttemperature unlessotherwisespecified. Single phase, half wave,60Hz, resistive or inductive load. Forcapacitive loads, derate currentby20%. RATINGS PARAMETER (TEST CONDITIONS) SYMBOL Series Number Maximum DC Blocking Voltage VRM Working Peak Reverse Voltage VRWM Maximum Peak Recurrent Reverse Voltage VRRM RMS Reverse Voltage VR (RMS) Power Dissipation in V(BR) Region for 100 µS Square Wave CONTROLLED AVALANCHE ADB ADB ADB DB 604 606 608 600 DB DB 601 602 DB 604 DB 606 DB DB 608 610 400 600 800 50 100 200 400 600 800 1000 280 420 560 35 70 140 280 420 560 PRM 400 n/a Continuous Power Dissipation in V(BR) Region @ THS=80 oC (Heat Sink Temp) PR 2 n/a Thermal Energy (Rating for Fusing) I 2t 60 IFSM 125 Peak Forward Surge Current (8.3 mSec single half sine wave superimposed on rated load) @ TC = 50 C (Note 1) @ TA = 40 oC (Note 2) Junction Operating and Storage Temperature Range IO 6 3 TJ, TSTG -55 to +150 Minimum Avalanche Voltage V(BR) Min 450 Maximum Avalanche Voltage V(BR) Max 900 1100 1300 Maximum Forward Voltage (Per Diode) at 3 Amps DC VOLTS 700 WATTS o Average Forward Rectified Current UNITS NON-CONTROLLED AVALANCHE 650 850 AMPS2 SEC AMPS °C n/a n/a VFM 1.1 VOLTS @ TA = 25oC @TA = 100 oC Minimum Insulation Breakdown Voltage (Circuit to Case) IRM 5 1 µA mA VISO 2000 VOLTS Junction to Ambient Junction to Case RθJA RθJC 2.5 5.0 Maximum Reverse Current at Rated V RM Typical Thermal Resistance (on Heat Sink) NOTES: (1) Unit mounted on 5.5" x 6.0' x 0.11" thick (14 x 15 x 0.3 cm) Aluminum plate (2) Unit mounted on PC Board with 0.375" (9.5 mm) lead length and 0.5" x 0.5" (12 x 12 mm) copper pads o C/W 4.97fbrdb600 F27 DIOTEC ELECTRONICS CORP. Data Sheet No. BRDB-600-2B ABDB-600-2B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 6 AMP SILICON BRIDGE RECTIFIERS RATING & CHARACTERISTIC CURVES FOR SERIES DB600 - DB610 and SERIES ADB604 - ADB608 175 Resistive and Inductive Loads 150 Case 125 NOTE 1 100 NOTE 2 Ambient 75 50 10 1 Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE 100 Number of Cycles at 60 Hz o FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 100 100 100 10 10 1.0 NOTE 3 1.0 TJ = 25 oC 0.1 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage FIGURE 4. TYPICAL REVERSE CHARACTERISTICS PER DIODE 0.01 Instantaneous Forward Voltage (Volts) FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE NOTES (1) Ambient = Ambient temperature, TA. P.C. Board mounting with 0.375" (9.5 mm) Lead lengths Case =Case Temperature, TC. Mounted on aluminum plate 5.5" x 6.0" x 0.11" thick (14 x 15 x 0.3 cm) (2) JEDEC Method, 8.3 mSec. Single Half Sine Wave; TJ = 150 oC (3) TJ = 25 oC; Pulse Width = 300 µSec F28 4.97bbrdb600