MA4P274-1225T Quad PIN Diode π Attenuator 5 –3000 MHz Features n n n n n n Package Outline (Topview) 4 PIN Diodes in SOT-25 Plastic Package Externally Selectable Bias and RF Match Network 5 – 3,000 MHz Useable Frequency Band + 43 dBm IP3@ 1 GHz (50 Ω) 1.0 dB Loss @ 1 GHz (50 Ω) 30 dB Attenuation @ 1 GHz (50 Ω) 3 Applications These PIN Diode Attenuators perform well where RF Signal Amplitude Control is required in 50 Ω Handset Circuits and 75 Ω Broadband CATV Systems. Exceptional Insertion Loss, Attenuation Range, and IP3 at <10 mA bias make these devices suitable for better power level control in RF Amplifiers. 1 Topview Description M/A-COM's MA4P274-1225 is a wideband, lower insertion loss, high IP3, Quad PIN Diode π Attenuator in a low-cost, surface mount SOT-25 package. Four PIN Diodes in one package reduce design parasitics and improve circuit density. 2 4 5 PIN Configuration PIN Function PIN Function 1 RF In 4 Shunt 1 Bias 2 Series Bias 5 Shunt 2 Bias 3 RF Out Guaranteed Electrical Specifications: @ +25 °C Parameter Test Conditions Units Ct @ 0 V 100 MHz Rs @ 1 mA Min. Typ. Max. pF 0.45 0.50 100 MHz Ω 13 18 Rs @ 10 mA 100 MHz Ω 2.3 3.0 Vb D.C. V Minority Carrier Lifetime ( 50 % - 90 % ) Voltage If = + 10mA, Ir = - 6mA Pulse @ 100 kHz Sq Wave nS Power Dissipation D.C. and F = 5 – 3,000 MHz Derate linearly to 0 mW at 125 C Using 1,000 deg-C/W Thermal Resistance mW 100 RF Incident Power F = 5 – 3,000 MHz Vshunt 1 & 2 Diode Bias = 0.75 V Vseries Diode Bias = 0 to 20 V dBm + 20 125 150 1000 2000 Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 Functional Schematic PIN 2: Series Bias PIN 3: RF Out PIN 1: RF In PIN 4 : Shunt 1 Bias PIN 5 : Shunt 2 Bias Absolute Maximum Ratings1 Case Style: SOT 25 Dim 2. Parameter Min. Max. Min. Max. Operating Temperature A .1103 .1181 2.80 3.10 Storage Temperature, No Dissipated Power B .1023 .1181 2.6 3.00 C 0.0355 .0512 0.9 1.30 DC Voltage at Temperature Extremes D 0.0591 .0669 1.5 1.70 DC Current at 25 °C E 1. Millimeters Inches .0374 REF. 0.95 REF. F .0138 .0197 .35 .50 G .0031 0.0079 .08 0.2 H .0002 .0059 .05 .15 J .0138 .0216 .35 .55 Mounting Temperature Absolute Maximum -65 °C to +125 °C -65 °C to +150 °C -100 V 75 mA +235 °C for 10 seconds 1. Exceeding any one or combination of these limits may cause permanent damage. Dimensions do not include mold peaks, protrusion or gate burrs which shall not exceed 0.0098 in. (.25) mm per side. Leads Coplanarity should be 0.003 (0.08) mm Max. Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2 Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 Typical 50 Ω SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design ( Values Shown include Through Loss Calibrated Out of RF Test Circuit ) Parameter Frequency Range Test Conditions Units Min. Typ. Insertion Loss 5 – 1,000 MHz + 3 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz dB -2.0 Insertion Loss 5 – 1,000 MHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz dB -1.0 Return Loss 5 – 1,000 MHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz dB -10 Attenuation 5 – 1,000 MHz 0 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F = 1 GHz dB -29 Input IP3 5 – 1,000 MHz 0 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 1000 MHz, F2 = 1100 MHz dBm 43 Input IP3 5 – 1,000 MHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 1000 MHz, F2 = 1100 MHz dBm 43 Input IP3 5 – 1,000 MHz 0 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 100 MHz, F2 = 110 MHz dBm 43 Input IP3 5 – 1,000 MHz + 6.5 mA / Series Diode and 0.75 V Shunt 1 and 2 Bias F1 = 100 MHz, F2 = 110 MHz dBm 33 Settling Time 5 – 1,000 MHz Within 1 dB of Final Attenuation Value F = 1 GHz uS 3 RF C.W. Incident Power 5 – 1,000 MHz 0 – 20 V Series Diode Bias and 0.75 V Shunt 1 and 2 Bias dBm + 20 Max. Typical 75 Ω SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design ( Values Shown include Through Loss Calibrated Out of RF Test Circuit ) Parameter Frequency Range Test Conditions Units Insertion Loss 5 – 1,000 MHz + 2 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias F = 1 GHz dB -1.1 Insertion Loss 5 – 1,000 MHz + 4.5 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias F = 1 GHz dB -0.6 Attenuation 5 – 1,000 MHz 0 mA / Series Diode and 1 V Shunt 1 and 2 Bias F = 1 GHz dB -27 Return Loss 5 – 1,000 MHz + 4.5 mA / Series Diode and 1.0 V Shunt 1 and 2 Bias F = 1 GHz dB -10 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. Min. Typ. Max. 3 Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 MA4P274-1225 Diode Ct vs Frequency @ 0 V MA4P274-1225 Diode Rs vs I 1000 1.00 100 MHz 4 MHz 100 900 MHz 10 1 0.10 1.00 10.00 100.00 F ( MHz ) 1000.00 10000.00 MA4P274-1225 Attenuation vs Frequency in 50 Ohms, Shunt Bias = 0.75 V 0.01 0.10 1.00 I ( mA ) 10.00 100.00 MA4P274-1225 Return Loss vs Frequency in 50 Ohms, Shunt Bias = 0.75 V 0 -5 Series Diode: 5 V Series Diode: 10 V -15 -5 Series Diode: 1 V Series Diode: 2 V -25 -10 Series Diode: 3 V Series Diode: 0 V Series Diode: 1 V -35 Series Diode: 5 -15 Series Diode: 0 V -45 Series Diode: 10 V -20 -55 -25 50 -65 50 150 250 350 450 550 650 750 850 950 150 250 350 450 550 650 750 850 950 Frequency ( MHz ) Frequency ( MHz ) RS vs. IF @ 100 MHz and 1 GHz Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. LS vs. Frequency @ 10 mA 4 Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 MA4P274-1225 IP3 vs Series Voltage, Vshunt = .075 V 60 55 50 F1 = 1000 MHz, F2 = 1100 MHz 45 40 F1 = 100 MHz, F2 = 110 MHz 35 30 25 20 0 2 4 6 8 10 12 14 16 18 20 Series Diode Voltage ( V ) MA4P274-1225 Insertion Loss vs Frequency in 75 Ohms, Shunt Bias = 1 V -1.4 -1.2 MA4P274-1225 Attenuation vs Frequency in 75 Ohms, Shunt Bias = 1 V -70 Series Current per Diode = 2 mA -60 -1 Series Diode: 0.5 V -50 Series Diode: 0.7 V -0.8 -40 Series Current per Diode = 4.5 mA -0.6 -30 Series Diode: 1 V -0.4 -20 Series Diode: 2 V -0.2 -10 Series Diode: 3 V Series Diode: 20 V 0 20.00 142.50 265.00 387.50 510.00 632.50 755.00 877.50 1000.00 0 20.00 142.50 265.00 387.50 510.00 632.50 755.00 877.50 1000.00 Frequency (MHz) Frequency (MHz) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5 Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 5 - 1,000 MHz Wideband RF Circuit 10K pF 1 K ohms PIN 2: Series Bias 10K pF 10K pF PIN 3: RF Out PIN 1: RF In 10K pF X2 1 K ohms PIN 4 : Shunt 1 Bias 1 K ohms PIN 5 : Shunt 2 Bias Note : Keeping PIN 4 & PIN 5 as Separate Bias Points ( Same V ) reduces RF leakage ( increases attenuation ) through an otherwise connected Common Anode Bias Node. 10 - 1,000 MHz Wideband RF Circuit Parts List Item Supplier Supplier P/N 4003 or 4350 Circuit Board 4003 ( εr = 3.38), 4350 ( εr = 3.48 ) Rogers Corporation www.rogers-corp.com RO4003 , RO4350 Capacitor, 10 K pF 3.2 mm L x 1.6 mm W x 1.15 mm H Resistor, 1K Ω 1.0 mm L x 0.5 mm w x 0. 25 mm H Murata www.murata.com Piconics www.piconics.com GRM42-6COH103K25PB Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. C1001BC42KSA 6 Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 Series and Shunt Diode Bias Currents as a Function of Vseries and Vshunt Voltage Using Wideband RF Circuit (Values shown are PER DIODE ) Vshunt Bias ( V ) Vseries Bias ( V ) Iseries Diode ( mA ) Ishunt Diode ( mA ) 0.75 0 0.000 0.192 0.75 1 0.106 0.120 0.75 2 0.443 0.048 0.75 3 0.773 0 0.75 4 1.099 0 0.75 5 1.426 0 0.75 6 1.750 0 0.75 7 2.092 0 0.75 8 2.424 0 0.75 9 2.756 0 0.75 10 3.088 0 0.75 11 3.421 0 0.75 12 3.754 0 0.75 13 4.087 0 0.75 14 4.410 0 0.75 15 4.743 0 0.75 16 5.081 0 0.75 17 5.406 0 0.75 18 5.750 0 0.75 19 6.079 0 0.75 20 6.413 0 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 7 Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 1 – 3 GHz 50 Ω, Higher Frequency, Lower Tuning Voltage RF Circuit PIN 2: Series Bias Vc = 0 – 5 V 0.1 uF 56 pF 100 ohms 330 ohms 56 pF 56 pF PIN 3: RF Out 22 nH 22 nH 56pF PIN 1: RF In 22 nH 330 ohms 680 pF (2X) 56 pF 1 K ohms 1 K ohms +5V PIN 5 : Shunt 2 Bias PIN 4 : Shunt 1 Bias 180 ohms 0.1 uF 180 ohms Note : Keeping PIN 4 & PIN 5 as Separate Bias Points ( Same V ) reduces RF leakage through an otherwise connected Common Anode Bias Node. Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 8 Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 1 - 3 GHz Higher Frequency RF Circuit Parts List Item Supplier Supplier P/N 4003 or 4350 Circuit Board 4003 ( εr = 3.38), 4350 ( εr = 3.48 ) Rogers Corporation www.rogers-corp.com RO4003 , RO4350 Capacitor, .01 uF, Power Supply Filter 1.6 mm L x 0.80 mm W x .080 mm H Murata www.murata.com GRM39X7R104K25PB Capacitor, 680 pF, Diode RF Bypass 2.0 mm L x 1.5 mm W x .085 mm H Murata GRM40COG681K50PB Capacitor, 56 pF, D.C. Block, RF Decoupling 1.0 mm L x 0.5 mm W x 0.5 mm H Inductor, 22 nH, RF Choke Murata GRM36COG560K50PB Coilcraft www.coilcraft.com 1812SMS-22NJ Resistor, 100 Ω 1.0 mm L x 0.5 mm w x 0. 25 mm H Piconics www.piconics.com C1001BC42KSA Resistor, 180 Ω 1.0 mm L x 0.5 mm w x 0. 25 mm H Piconics C1800BC42KSA Resistor, 330 Ω 1.0 mm L x 0.5 mm w x 0. 25 mm H Piconics C3300BC42KSA Resistor, 1K Ω 1.0 mm L x 0.5 mm w x 0. 25 mm H Piconics C1001BC42KSA Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 9 Quad PIN Diode π Attenuator MA4P274-1225T MA4P274-1225, V 3.00 Lumped Model of SOT-25, MA4P274-1225 PIN Diode π Quad Attenuator L L1 L=0.8 nH Port P1 Num=1 C C3 C=0.27 pF C C7 C=0.05 pF C C1 C=0.27pF L L2 L=0.8 nH C C2 C=0.27 pF R R3 R=Rjsh Ohm L L4 L=0.8 nH C C5 C=0.05pF R R1 R=Rjse Ohm C C9 C=0.0003 pF MA4P274-1225 SPICE MODEL C C6 C=0.05pF Port P2 Num=2 C C8 C=0.27 pF R R4 R=Rjsh Ohm R R2 R=Rjse Ohm L L3 L=0.8 nH C C4 C=0.05 pF C C10 C=0.0003 pF Ordering Information Model Number Package MA4P274 -1225 Tube MA4P274 -1225T Tape and Reel Pin Diode Model NLPINM2 Is=1E-14 A Vi=0 V Un=900 cm 2/V-sec Wi=60 um Rr=1.25 Ohm Cmin=0.20 pF Tau=1.0 usec Rs=0.1 Ohm Cjo=0.27 pF Vj=0.7 V M=0.5 Fc=0.5 Imax=2.5E+6 A/m2 Kf=0 Af=1 Ffe=1 wBV= 150 V Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 10