BAS19, BAS20, BAS21 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified 1 2 • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes/options: 18/10K per 13” reel (8 mm tape), 10K/box 08/3K per 7” reel (8 mm tape), 15K/box PARTS TABLE PART TYPE DIFFERENTIATION BAS19 VR = 100 V BAS20 VR = 150 V BAS21 VR = 200 V ORDERING CODE BAS19-E3-08 or BAS19-E3-18 BAS19-HE3-08 or BAS19-HE3-18 BAS20-E3-08 or BAS20-E3-18 BAS20-HE3-08 or BAS20-HE3-18 BAS21-E3-08 or BAS21-E3-18 BAS21-HE3-08 or BAS21-HE3-18 TYPE MARKING INTERNAL CONSTRUCTION REMARKS A8 Single diode Tape and reel A81 Single diode Tape and reel A82 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Continuous recerse voltage Repetitive peak reverse voltage PART SYMBOL VALUE UNIT BAS19 VR 100 V BAS20 VR 150 V BAS21 VR 200 V BAS19 VRRM 120 V BAS20 VRRM 200 V BAS21 VRRM 250 V Non repetitive peak forward current t = 1 μs IFSM 2.5 A Non repetitive peak forward surge current t=1s IFSM 0.5 A Maximum average forward rectified current (1) (av. over any 20 ms period) IF(AV) 200 mA mA DC forward current (2) IF 200 Repetitive peak forward current IFRM 625 mA Power dissipation (2) Ptot 250 mW Notes (1) Measured under pulse conditions; pulse time = t 0.3 ms p (2) Device on fiberglass substrate, see layout on next page Rev. 1.8, 15-May-13 Document Number: 85540 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS19, BAS20, BAS21 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air Junction temperature SYMBOL VALUE UNIT RthJA (1) 430 °C Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Note (1) Device on fiberglass substrate, see layout drawing below ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage PART SYMBOL UNIT VF MIN. TYP. 1.0 V IF = 200 mA VF 1.25 V VR = 100 V BAS19 IR 100 nA VR = 150 V BAS20 IR 100 nA VR = 200 V BAS21 IR 100 nA VR = VRmax., Tj = 150 °C IR 100 μA IF = 10 mA rf VR = 0, f = 1 MHz CD 5 pF IF = IR = 30 mA, RL = 100 , iR = 3 mA trr 50 ns Leakage current Dynamic forward resistance Diode capacitance Reverse recovery time MAX. IF = 100 mA 5 LAYOUT FOR RthJA TEST Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) Rev. 1.8, 15-May-13 17451 Document Number: 85540 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS19, BAS20, BAS21 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) o8 ° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t 0.5 (0.020) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.8, 15-May-13 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.43 (0.056) 1.20 (0.047) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Document Number: 85540 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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