DG508B, DG509B www.vishay.com Vishay Siliconix Precision 8-Channel / Dual 4-Channel CMOS Analog Multiplexers DESCRIPTION FEATURES The DG508B is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address (A0, A1, A2). The DG509B is a dual 4-channel differential analog multiplexer designed to connect one of four differential inputs to a common dual output as determined by its 2-bit binary address (A0, A1). Break-before-make switching action protects against momentary crosstalk between adjacent channels. • Operate with single or dual power supply An on channel conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails. An enable (EN) function allows the user to reset the multiplexer / demultiplexer to all switches off for stacking several devices. All control inputs, addresses (AX) and enable (EN) are TTL compatible over the full specified operating temperature range. The DG508B and DG509B are fabricated on an enhanced SG-II CMOS process that achieves improved performance on: reduced charge injection, lower device leakage, and minimized parasitic capacitance. • V+ to V- analog signal swing range • 44 V power supply maximum rating • Extended operate temperature range: -40 °C to +125 °C • Low leakage typically < 3 pA • Low charge injection - QINJ = 2 pC • Low power - ISUPPLY: 10 μA • TTL compatible logic • > 250 mA latch-up current per JESD78 • Available in SOIC16, TSSOP16, PDIP, and miniQFN16 packages • Superior alternative to: - ADG508A, DG508A, HI-508 - ADG509A, DG509A, HI-509 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 As the DG508, DG509 has a long history in the industry with many suppliers offering copies - and in some cases improved variations - with the best in class improvements, the Vishay Siliconix new version of the DG508B, DG509B are the superior alternatives to what is currently available. BENEFITS Applications for the DG508B, DG509B include high speed and high precision data acquisition, audio signal switching and routing, ATE systems, and avionics. High performance and low power dissipation make them ideal for battery operated and remote instrumentation applications. • Reduced power consumption The DG508B and DG509B have the absolute maximum voltage rating extended to 44 V. Additionally, single supply operation is also allowed. An epitaxial layer prevents latch-up. The DG508B and DG509B are both available in 16-lead SOIC, TSSOP, PDIP, and miniQFN (1.8 mm x 2.6 mm) package options with extended temperature range of -40 °C to +125 °C. • Reduced switching errors • Reduced glitching • Improved data throughput • Increased ruggedness • Wide supply ranges (± 5 V to ± 20 V) APPLICATIONS • Data acquisition systems • Audio and video signal routing • ATE systems • Medical instrumentation For more information, refer to Vishay Siliconix DG508B, DG509B evaluation board note. S14-2382-Rev. E, 15-Dec-14 Document Number: 64821 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG509B Dual-In-Line SOIC and TSSOP DG508B Dual-In-Line SOIC and TSSOP 16 A1 A0 1 16 A1 15 A2 EN 2 15 GND 3 14 GND V- 3 14 V+ S1 4 13 V+ S1a 4 13 S1b S2 5 12 S5 S2a 5 12 S2b S3 6 11 S6 S3a 6 11 S3b S4 7 10 S7 S4a 7 10 S4b D 8 9 S8 Da 8 9 Db A0 1 EN 2 V- Decoders/Drivers Decoders/Drivers Top view Top view DG508B miniQFN-16L GND 12 V+ 11 S5 10 DG509B miniQFN-16L A2 13 A1 14 Decoders/ Drivers 6XX A0 15 V+ 12 S6 9 EN 16 1 2 3 4 V- S1 S2 S3 8 S7 GND 13 7 S8 A1 14 6 D A0 15 5 S4 EN 16 Pin 1: LONG LEAD S1B 11 S3B 9 S2B 10 8 S4B 7 DB Decoders/ Drivers 7XX 6 DA 5 S4A 1 2 3 4 V- S1A S2A S3A Pin 1: LONG LEAD Top View Device Marking: 7XX Traceability Code: 7 is DG509BEN XX = Date/Lot Top View Device Marking: 6XX Traceability Code: 6 is DG508BEN XX = Date/Lot TRUTH TABLES AND ORDERING INFORMATION TRUTH TABLE (DG508B) TRUTH TABLE (DG509B) A2 A1 A0 EN ON SWITCH A1 A0 EN ON SWITCH X X X 0 None X X 0 None 0 0 0 1 1 0 0 1 1 0 0 1 1 2 0 1 1 2 0 1 0 1 3 1 0 1 3 0 1 1 1 4 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 S14-2382-Rev. E, 15-Dec-14 Logic “0” = VIL ≤ 0.8 V Logic “1” = VIH ≥ 2 V X = Do not care Document Number: 64821 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix ORDERING INFORMATION (DG508B) TEMP. RANGE -40 °C to +125 °C a PACKAGE ORDERING INFORMATION (DG509B) PART NUMBER TEMP. RANGE PACKAGE PART NUMBER 16-Pin SOIC DG508BEY-T1-E3 16-Pin SOIC DG509BEY-T1-E3 16-Pin TSSOP DG508BEQ-T1-E3 16-Pin TSSOP DG509BEQ-T1-E3 16-Pin PDIP DG508BEJ-E3 16-Pin PDIP DG509BEJ-E3 16-Pin MiniQFN DG508BEN-T1-GE4 16-Pin MiniQFN DG509BEN-T1-GE4 -40 °C to +125 °C a Note a. -40 °C to +85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS PARAMETER Voltages Referenced to V- LIMIT V+ 44 GND 25 Digital Inputs a, VS, VD (V-) - 2 to (V+) + 2 or 20 mA, whichever occurs first Current (Any terminal) 30 Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature (EY, EQ, EJ, EN suffix) 16-Pin Narrow SOIC Power Dissipation (Packages) b Thermal Resistance (θJA) b c 16-Pin TSSOP d 16-Pin PDIP e -65 to +150 450 16-Pin miniQFN f 525 16-Pin Narrow SOIC c 125 16-Pin TSSOP 16-Pin PDIP e 16-Pin miniQFN f V mA °C 600 510 d UNIT 178 159.6 mW °C/W 152 Notes a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 8 mW/°C above 70 °C. d. Derate 5.6 mW/°C above 70 °C. e. Derate 6.3 mW/°C above 70 °C. f. Derate 6.6 mW/°C above 70 °C. S14-2382-Rev. E, 15-Dec-14 Document Number: 64821 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 15 V, V- = -15 V (± 10 %) VAX, VEN = 2 V, 0.8 V a TEMP. b TYP. c -40 °C to +125 °C -40 °C to +85 °C MIN. d MAX. d MIN. d MAX. d UNIT Analog Switch Analog Signal Range e Drain-Source On-Resistance RDS(on) Matching Source Off Leakage Current Drain Off Leakage Current VANALOG RDS(on) VD = ± 10 V, IS = -1 mA ΔRDS(on) VD = ± 10 V IS(off) ID(off) VD = ± 10 V VS = − + 10 V VEN = 0 V DG508B DG509B Drain On Leakage Current ID(on) − 10 V VS = VD = + sequence each switch on DG508B DG509B Full - -15 15 -15 15 Room 180 - 380 - 380 Full - - 480 - 450 Room 10 - - - - Room - -1 1 -1 1 Full - -50 50 -50 50 Room - -1 1 -1 1 Full - -100 100 -100 100 Room - -1 1 -1 1 Full - -50 50 -50 50 Room - -1 1 -1 1 Full - -100 100 -100 100 Room - -1 1 -1 1 Full - -50 50 -50 50 V Ω nA Digital Control Logic High Input Voltage VINH Full - 2 - 2 - Logic Low Input Voltage VINL Full - - 0.8 - 0.8 Logic High Input Current IIH VAX, VEN = 2 V Full - -1 1 -1 1 Logic Low Input Current IIL VAX, VEN = 0.8 V Full - -1 1 -1 1 Logic Input Capacitance e CIN f = 1 MHz Room 4 - - - - 145 - 300 - 300 tTRANS VS1 = +10 V/-10 V, VS8 = -10 V/+10 V, RL = 1 MΩ, CL = 35 pF Room Transition Time Full - - 400 - 400 Break-Before-Make Interval tOPEN VS1 = VS8 = 5 V, CL = 35 pF, RL = 1 kΩ Room 37 15 - 15 - Full - 1 - 1 - Enable Turn-On Time tON(EN) Room 100 - 250 - 250 340 V μA pF Dynamic Characteristics Enable Turn-Off Time tOFF(EN) Charge Injection e QINJ Off Isolation e OIRR Crosstalk e XTALK VS1 = 5 V, VS2 to VS8 = 0 V, RL = 1 kΩ, CL = 35 pF CL = 1 nF, RGEN = 0 W, VGEN = 0 V CL = 5 pF, RL = 50 Ω, f = 1 MHz Full - - 340 - Room 90 - 240 - 240 Full - - 300 - 300 Full 2 - - - - Room -81 - - - - Room -88 - - - - ns pC dB BW RL = 50 Ω Room 250 - - - - MHz Total Harmonic Distortion e THD RL = 10 kΩ, 5 Vrms f = 20 Hz to 20 kHz Room 0.04 - - - - % Source Off Capacitance e CS(off) -3 dB Bandwidth e Drain Off Capacitance e CD(off) Drain On Capacitance e CD(on) f = 1 MHz Room 3 - - - - DG508B Room 13 - - - - DG509B Room 8 - - - - DG508B Room 18 - - - - DG509B Room 11 - - - - Room 0.01 - 0.2 - 0.2 Full - - 0.3 - 0.3 Full 0.06 -10 - -10 - pF Power Supply Positive Supply Current I+ Negative Supply Current I- S14-2382-Rev. E, 15-Dec-14 VAX, VEN = 0.8 V or 2.4 V mA μA Document Number: 64821 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix SPECIFICATIONS (Single Supply 12 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, V- = 0 V (± 10 %) VAX, VEN = 2 V, 0.8 V a -40 °C to +125 °C -40 °C to +85 °C TEMP. b TYP. c MIN. d MAX. d MIN. d MAX. d UNIT Analog Switch Analog Signal Range e On-Resistance RDS(on) Matching VANALOG RDS(on) VD = 10 V/0 V, IS = 1 mA ΔRDS(on) IS(off) Switch Off Leakage Current ID(off) V+ = 12 V, V- = 0 V VD = 0 V/10 V, VS = 10 V/0 V ID(off) DG508B DG509B DG508B Channel On Leakage Current ID(on) V+ = 12 V, V- = 0 V VS = VD = 0 V/10 V DG509B Full - 0 12 0 12 Room 265 - 500 - 500 Full - - 650 - 600 Room 10 - - - - Room - -1 1 -1 1 50 Full - -50 -50 -50 Room - -1 1 -1 1 Full - -100 100 -100 100 Room - -1 1 -1 1 Full - -50 50 -50 50 Room - -1 1 -1 1 Full - -100 100 -100 100 Room - -1 1 -1 1 Full - -50 50 -50 50 V Ω nA nA Digital Control Logic High Input Voltage VINH Full - 2 - 2 - Logic Low Input Voltage VINL Full - - 0.8 - 0.8 Logic High Input Current IIH VAX, VEN = 2 V Full - -1 1 -1 1 Logic Low Input Current IIL VAX, VEN = 0.8 V Full - -1 1 -1 1 Logic Input Capacitance e CIN f = 1 MHz Room 4 - - - - Transition Time tTRANS VS1 = 10 V/0 V, VS8 = 0 V/10 V, RL = 1 MΩ, CL = 35 pF Room 165 - 400 - 400 Full - - 550 - 500 Break-Before-Make Interval tOPEN VS1 = VS8 = 5 V, CL = 35 pF, RL = 1 kΩ Room 37 15 - 15 - V μA pF Dynamic Characteristics Enable Turn-On Time tON(EN) VS1 = 5 V, VS2 to VS8 = 0 V, RL = 1 kΩ, CL = 35 pF Enable Turn-Off Time tOFF(EN) Full - 1 - 1 - Room 125 - 300 - 300 Full - - 550 - 425 Room 75 - 250 - 250 Full - - 350 - 300 ns QINJ CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V Full 2.5 - - - - OIRR CL = 5 pF, RL = 50 Ω f = 1 MHz Room -80 - - - - XTALK Room -88 - - - - -3 dB Bandwidth e BW RL = 50 Ω Room 200 - - - - MHz Total Harmonic Distortion e THD RL = 10 kΩ, 5 VRMS, f = 20 Hz to 20 kHz Room 0.26 - - - - % Source Off Capacitance e CS(off) 2 - - - - Drain Off Capacitance e CD(off) 13 - - - - 8 - - - - DG508B 17 - - - - DG509B 12 - - - - Charge Injection e Off Isolation e Crosstalk e Channel On Capacitance e S14-2382-Rev. E, 15-Dec-14 CD(on) DG508B f = 1 MHz DG509B Room pC dB pF Document Number: 64821 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix SPECIFICATIONS (Single Supply 12 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, V- = 0 V (± 10 %) VAX, VEN = 2 V, 0.8 V a I+ VAX, VEN = 0.8 V or 2.4 V -40 °C to +125 °C -40 °C to +85 °C TEMP. b TYP. c Room Full MIN. d MAX. d MIN. d MAX. d 0.01 - 0.2 - 0.2 - - 0.3 - 0.3 UNIT Power Supply Positive Supply Current mA Notes a. VAX, VEN = input voltage perform proper function. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. ΔRDS(on) = RDS(on) max. - RDS(on) min. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHEMATIC DIAGRAM (Typical Channel) V+ GND VREF D A0 AX Level Shift Decode/ Drive V+ V- S1 EN Sn V- Fig. 1 S14-2382-Rev. E, 15-Dec-14 Document Number: 64821 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 400 400 T = 25 °C IS = 1 mA 375 V = + 10.8 V 325 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 350 300 V = + 12.0 V 375 250 V = + 20.0 V 225 200 V = + 36.0 V 175 T = 25 °C IS = 1 mA 350 150 V = ± 5.0 V V = ± 10.8 V 300 V = ± 13.5 V V = ± 15 V V = ± 20 V 250 200 150 100 125 50 - 20 - 16 - 12 100 0 4 8 12 16 20 24 28 32 36 -4 0 4 8 12 16 20 VD - Analog Voltage (V) On-Resistance vs. VD and Single Supply Voltage On-Resistance vs. VD and Dual Supply Voltage 500 550 V = + 10.8 V IS = 1 mA + 125 °C + 85 °C + 25 °C - 40 °C 450 450 + 125 °C RON - On-Resistance (Ω) 500 RON - On-Resistance (Ω) -8 VD - Analog Voltage (V) 400 350 300 250 200 400 350 + 85 °C 300 + 25 °C 250 200 - 40 °C V = + 12 V IS = 1 mA 150 150 100 100 0 1 2 3 4 5 6 7 8 9 0 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12 V - Analog Voltage (V) V - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature 300 400 V = + 36 V IS = 1 mA V = + 20 V IS = 1 mA 350 RON - On-Resistance (Ω) RON - On-Resistance (Ω) 250 300 + 125 °C 250 + 85 °C 200 + 25 °C 150 - 40 °C 200 + 125 °C 150 + 85 °C + 25 °C 100 100 - 40 °C 50 50 0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20 24 28 32 36 V - Analog Voltage (V) V - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature S14-2382-Rev. E, 15-Dec-14 Document Number: 64821 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 650 400 V=±5V IS = 1 mA 600 500 RON - On-Resistance (Ω) 550 RON - On-Resistance (Ω) V = ± 10.8 V IS = 1 mA 350 + 125 °C 450 400 350 + 85 °C 300 + 25 °C 250 200 300 + 125 °C 250 200 + 85 °C 150 + 25 °C 100 - 40 °C - 40 °C 150 100 -5 -4 -3 -2 -1 0 1 2 3 4 50 - 11 - 9 5 -5 -3 -1 3 5 7 9 11 On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature 350 V = ± 13.5 V IS = 1 mA V± = ± 15.0 V IS = 1 mA 300 RON - On-Resistance (Ω) 300 250 + 125 °C 200 + 85 °C 150 + 25 °C 100 250 + 125 °C 200 + 85 °C 150 + 25 °C 100 - 40 °C 50 - 14 - 10 -6 -2 - 40 °C 2 6 10 50 - 15 14 -9 -3 3 9 15 V - Analog Voltage (V) V - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature 1.8 350 + 125 °C + 85 °C + 25 °C - 40 °C V = ± 20 V IS = 1 mA 1.7 1.6 VT - Switching Threshold (V) 300 RON - On-Resistance () 1 V - Analog Voltage (V) 350 RON - On-Resistance (Ω) -7 V - Analog Voltage (V) 250 200 150 100 1.5 VIH 1.4 1.3 VIL 1.2 1.1 1.0 0.9 50 - 20 - 16 - 12 -8 -4 0 4 8 12 16 20 V - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature S14-2382-Rev. E, 15-Dec-14 0.8 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 64821 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 mA 10 RL = 10 k VSignal = 5 VRMS 10 mA I+ - Supply Current (A) 1 THD (%) V = + 12 V 0.1 V = ± 15 V V = ± 15.0 V 1 mA 100 µA V = + 12.0 V 0.01 10 µA 1 µA 0 10 100 1000 Frequency (Hz) 10 000 100 000 10 100 1K 10K 100K 1M 10M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency THD vs. Frequency 1000 10 000 V = +36 V+/- = +/-15V 100 85 °C 125 °C 25 °C I+ - Supply Current (μA) I+ - Supply Current (μA) 1000 -40 °C 125 °C 100 85 °C 25 °C 10 -40 °C 10 0.0 6.0 12.0 18.0 24.0 30.0 1 0.0 36.0 VAX, VEN - (V) 6.0 9.0 VAX, VEN - (V) Supply Current vs. VAX, VEN Supply Current vs. VAX, VEN 10 - 10 V+ = 12 V RL = 50 - 30 - 40 OIRR - 50 - 60 XTalk - 70 Loss, OIRR, XTALK (dB) Loss, OIRR, XTALK (dB) 15.0 0 Loss - 10 - 20 - 30 Loss V = ± 15 V RL = 50 - 40 OIRR - 50 - 60 - 70 - 80 - 80 - 90 - 90 - 100 100K 12.0 10 0 - 20 3.0 1M 10M 100M 200M Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency S14-2382-Rev. E, 15-Dec-14 - 100 100K XTalk 1M 10M 100M 300M Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Document Number: 64821 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 12 100 mA 10 QINJ - Charge Injection (pF) 10 mA I- - Supply Current (A) 1 mA V = ± 15.0 V 100 µA 10 µA V = + 12.0 V 1 µA 100 nA 8 6 4 2 0 V = + 12 V CL = 1 nF -2 -4 -6 -8 10 nA V = ± 15 V CL = 1 nF - 10 1 nA 10 100 1K 10K 100K 1M - 12 - 15 - 12 10M -3 0 3 6 9 12 Supply Current vs. Input Switching Frequency Charge Injection vs. Analog Voltage 15 8 V = ± 15.0 V 6 I D(ON) Leakage Current (pA) 104 Leakage Current (pA) -6 VS - Analog Voltage (V) 105 103 102 101 -9 Input Switching Frequency (Hz) I D(OFF) V = ± 15 V T = 25 °C 4 ID(ON) 2 0 -2 IS(OFF) ID(OFF) -4 100 -6 I S(OFF) 10-1 - 60 - 40 - 20 -8 0 20 40 60 80 Temperature (ºC) 100 120 140 Leakage Current vs. Temperature S14-2382-Rev. E, 15-Dec-14 - 15 - 10 -5 0 5 Analog Voltage (V) 10 15 Leakage Current vs. Analog Voltage Document Number: 64821 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix TEST CIRCUITS + 15 V V+ A2 S1 A1 50 ± 10 V S2 - S7 A0 S8 DG508B EN ± 10 V VO D GND + 2.0 V V- Logic Input 50 % 0V 35 pF 1 M tr < 20 ns tf < 20 ns 3V - 15 V VS1 90 % Switch Output + 15 V VO 0V V+ A1 ± 10 V S1b A0 90 % VS8 S1a - S4a, Da 50 DG509B S4b S1 ON GND S8 ON VO Db EN + 2.0 V tTRANS tTRANS ± 10 V V35 pF 1 M - 15 V Fig. 2 - Transition Time + 15 V V+ S1 5V EN S2 - S8 A0 DG508B A1 A2 GND VO D V- 50 Logic Input 50 % 0V 35 pF 1k tr < 20 ns tf < 20 ns 3V tON(EN) - 15 V tOFF(EN) 0V + 15 V Switch Output VO V+ S1b 90 % 5V VO EN A0 A1 GND 10 % S1a - S4a, Da S2b - S4b DG509B Db V- 50 1k VO 35 pF - 15 V Fig. 3 - Enable Switching Time S14-2382-Rev. E, 15-Dec-14 Document Number: 64821 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix TEST CIRCUITS + 15 V + 2.4 V V+ EN All S and Da tr < 20 ns tf < 20 ns 3V Logic Input 50 % +5V 0V A0 DG508B DG509B A1 A2 GND Db, D VO VO V- 80 % Switch Output 50 35 pF 1 k - 15 V VO tOPEN 0V Fig. 4 - Break-Before-Make Interval + 15 V Rg V+ SX Logic Input EN OFF ON OFF 0V A0 Channel Select 3V VO D A1 CL 1 nF A2 GND VO Switch Output V- VO is the measured voltage due to charge transfer error Q, when the channel turns off. - 15 V QINJ = CL x VO Fig. 5 - Charge Injection + 15 V + 15 V VIN V+ SX VS Rg = 50 Ω VS V+ S1 Rg = 50 Ω S8 A0 D VO A1 A2 GND EN V- RL 50 Ω A0 D VO A1 A2 GND EN V- RL 50 Ω - 15 V Off Isolation = 20 log VOUT VIN Fig. 6 - Off Isolation S14-2382-Rev. E, 15-Dec-14 - 15 V Insertion Loss = 20 log VOUT VIN Fig. 7 - Insertion Loss Document Number: 64821 12 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG508B, DG509B www.vishay.com Vishay Siliconix TEST CIRCUITS + 15 V + 15 V VIN VS V+ S1 SX V+ S8 A0 Rg = 50 Ω D A2 Channel Select GND EN V- RL 50 Ω Crosstalk = 20 log VOUT S8 A1 A0 D GND - 15 V Meter A2 VO A1 S1 EN V- HP4192A Impedance Analyzer or Equivalent f = 1 MHz - 15 V VIN Fig. 8 - Crosstalk Fig. 9 - Source Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64821. S14-2382-Rev. E, 15-Dec-14 Document Number: 64821 13 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix MINI QFN-16L (1) (2) (3) (4) L1 (5) (16) L D (12) (11) (10) (9) (8) (7) (15) (6) (16) (5) (15) (6) (14) (7) (13) (8) E (13) (14) (12) (11) (10) (9) (2) (1) (3) (4) e DIM C b A A1 BACK SIDE VIEW MILLIMETERS MIN. NAM INCHES MAX. MIN. NAM MAX. A 0.70 0.75 0.80 0.0275 0.0295 0.0315 A1 0 - 0.05 0 - 0.002 b 0.15 0.20 0.25 0.0059 0.0078 0.0098 C 0.15 0.20 0.25 0.0059 0.0078 0.0098 D 2.60 BSC 0.1023 BSC E 1.80 BSC 0.0708 BSC e 0.40 BSC 0.0157 BSC L 0.35 0.40 0.45 0.0137 0.0157 0.0177 L1 0.45 0.50 0.55 0.0177 0.0196 0.0216 ECN T-06380-Rev. A, 14-Aug-06 DWG: 5954 Document Number: 74323 14-Aug-06 www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR TSSOP-16 0.193 (4.90) 0.171 0.014 0.026 0.012 (0.35) (0.65) (0.30) (4.35) (7.15) 0.281 0.055 (1.40) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 63550 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 16L 0.562 (0.0221) 0.400 (0.0157) 0.225 (0.0089) 1 2.900 (0.1142) 0.463 (0.0182) 1.200 (0.0472) 2.100 (0.0827) Mounting Footprint Dimensions in mm (inch) Document Number: 66557 Revision: 05-Mar-10 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000