DG408, DG409 Vishay Siliconix 8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers DESCRIPTION FEATURES The DG408 is an 8 channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address (A0, A1, A2). The DG409 is a dual 4 channel differential analog multiplexer designed to connect one of four differential inputs to a common dual output as determined by its 2-bit binary address (A0, A1). Break-before-make switching action protects against momentary crosstalk between adjacent channels. • • • • • • • • An on channel conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails. An enable (EN) function allows the user to reset the multiplexer/demultiplexer to all switches off for stacking several devices. All control inputs, address (Ax) and enable (EN) are TTL compatible over the full specified operating temperature range. Applications for the DG408, DG409 include high speed data acquisition, audio signal switching and routing, ATE systems, and avionics. High performance and low power dissipation make them ideal for battery operated and remote instrumentation applications. Designed in the 44 V silicon-gate CMOS process, the absolute maximum voltage rating is extended to 44 V. Additionally, single supply operation is also allowed. An epitaxial layer prevents latchup. For additional information please see Technical Article TA201. Low on-resistance - RDS(on): 100 Low charge injection - Q: 20 pC Fast transition time - tTRANS: 160 ns Low power - ISUPPLY: 10 μA Single supply capability 44 V supply max. rating TTL compatible logic Compliant to RoHS Directive 2002/95/EC BENEFITS • • • • • • Reduced switching errors Reduced glitching Improved data throughput Reduced power consumption Increased ruggedness Wide supply ranges (± 5 V to ± 20 V) APPLICATIONS • • • • • • Data acquisition systems Audio signal routing ATE systems Battery powered systems Single supply systems Medical instrumentation FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line, SOIC and TSSOP DG408 A0 EN VS1 S2 S3 S4 D 1 2 16 Decoders/Drivers Dual-In-Line, SOIC and TSSOP DG409 15 3 14 4 13 5 12 6 11 7 10 8 9 A1 A0 A2 EN GND V- V+ S1a S5 S2a S6 S3a S7 S4a S8 Da Top View 1 2 16 Decoders/Drivers 15 3 14 4 13 5 12 6 11 7 10 8 9 A1 GND V+ S1b S2b S3b S4b Db Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70062 S11-0933-Rev. J, 16-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix TRUTH TABLE (DG408) TRUTH TABLE (DG409) A2 A1 A0 EN ON SWITCH A1 A0 EN ON SWITCH X X X 0 None X X 0 None 0 0 0 1 1 0 0 1 1 0 0 1 1 2 0 1 1 2 0 1 0 1 3 1 0 1 3 0 1 1 1 4 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 Notes • Logic “0” = VAL 0.8 V • Logic “1” = VAH 2.4 V • X = Do not care ORDERING INFORMATION (Commercial) PART CONFIGURATION TEMP. RANGE PACKAGE ORDERING PART NUMBER DG408DJ 16-pin plastic DIP DG408DJ-E3 DG408DY DG408DY-E3 16-pin SOIC DG408 8:1 x 1 DG408DY-T1 - 40 °C to 85 °C DG408DY-T1-E3 DG408DQ DG408DQ-E3 16-pin TSSOP DG408DQ-T1 DG408DQ-T1-E3 DG409DJ 16-pin plastic DIP DG409DJ-E3 DG409DY DG409DY-E3 16-pin SOIC DG409 4:1 x 2 DG409DY-T1 - 40 °C to 85 °C DG409DY-T1-E3 DG409DQ DG409DQ-E3 16-pin TSSOP DG409DQ-T1 DG409DQ-T1-E3 ABSOLUTE MAXIMUM RATINGS PARAMETER Voltages Referenced to VDigital Inputsa, V+ GND LIMIT 44 25 Current (any terminal) 30 Peak Current, S or D (pulsed at 1 ms, 10 % duty cycle max.) 100 Power Dissipation (Package)b V (V-) - 2 to (V+) + 2 or 20 mA, whichever occurs first VS, VD Storage Temperature UNIT (DJ, DY suffix) mA - 65 to 125 16-pin plastic DIPc 450 16-pin narrow SOIC and TSSOPd 600 °C mW Notes a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 6 mW/°C above 75 °C. d. Derate 7.6 mW/°C above 75 °C. www.vishay.com 2 Document Number: 70062 S11-0933-Rev. J, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix SPECIFICATIONSa TEST CONDITIONS UNLESS OTHERWISE SPECIFIED D SUFFIX - 40 °C to 85 °C V+ = 15 V, V- = - 15 V PARAMETER SYMBOL VAL = 0.8 V, VAH = 2.4 Vf TEMP.b TYP.c MIN.d MAX.d UNIT V Analog Switch Analog Signal Rangee Drain-Source On-Resistance RDS(on) Matching Between Channelsg Source Off Leakage Current VANALOG DG409 Drain Off Leakage Current DG409 15 - 100 Full - - 125 - - 15 RDS(on) VD = ± 10 V Room IS(off) VS = ± 10 V, VD = ± 10 V, VEN = 0 V Room - - 0.5 0.5 Full - -5 5 Room - -1 1 20 ID(off) VD = ± 10 V, VS = ± 10 V, VEN = 0 V DG408 Drain On Leakage Current - 15 VD = ± 10 V, IS = - 10 mA DG409 DG408 40 RDS(on) DG408 DG408 Full Room ID(on) VS = VD = ± 10 V sequence each switch on DG409 Full - - 20 Room - -1 1 Full - - 10 10 Room - -1 1 Full - - 20 20 Room - -1 1 Full - - 10 10 nA Digital Control Logic High Input Voltage VINH Full - 2.4 - Logic Low Input Voltage VINL Full - - 0.8 Logic High Input Current IAH VA = 2.4 V, 15 V Full - - 10 10 Logic Low Input Current IAL VEN = 0 V, 2.4 V, VA = 0 V Full - - 10 10 Logic Input Capacitance Cin f = 1 MHz Room 8 - - Transition Time tTRANS see figure 2 Full 160 - 250 Break-Before-Make Interval tOPEN see figure 4 Room - 10 - Enable Turn-On Time tON(EN) Enable Turn-Off Time tOFF(EN) V μA pF Dynamic Characteristics Room 115 - 150 see figure 3 Full - - - Room 105 - 150 Q CL = 10 nF, VS = 0 V Room 20 - - Off Isolationh OIRR VEN = 0 V, RL = 1 k, f = 1 MHz Room - 75 - - Source Off Capacitance CS(off) VEN = 0 V, VS = 0 V, f = 1 MHz Room 3 - - Room 26 - - Charge Injection DG408 DG409 DG408 DG409 Drain Off Capacitance Drain On Capacitance CD(off) CD(on) VEN = 0 V, VD = 0 V, f = 1 MHz Room 14 - - Room 37 - - Room 25 - - Full 10 - 75 Full 1 - 75 - Room 0.2 - 0.5 Full - - 2 Full - - 500 - ns pC pF Power Supplies Positive Supply Current I+ Negative Supply Current I- Positive Supply Current I+ Negative Supply Current I- Document Number: 70062 S11-0933-Rev. J, 16-May-11 VEN = VA = 0 V or 5 V VEN = VA = 0 V or 5 V μA mA μA www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix SPECIFICATIONSa (Single Supply) TEST CONDITIONS UNLESS OTHERWISE SPECIFIED D SUFFIX - 40 °C to 85 °C V+ = 12 V, V- = 0 V SYMBOL VAL = 0.8 V, VAH = 2.4 Vf TEMP.b TYP.c MIN.d MAX.d UNIT RDS(on) VD = 3 V, 10 V, IS = - 1 mA Room 90 - - Switching Time of Multiplexere tTRANS VS1 = 8 V, VS8 = 0 V, VIN = 2.4 V Room 180 - - Enable Turn-On Timee tON(EN) VINH = 2.4 V, VINL = 0 V, VS1 = 5 V Room 180 - - Enable Turn-Off Timee tOFF(EN) Room 120 - - Room 5 - - PARAMETER Analog Switch Drain-Source On-Resistancee, f Dynamic Characteristics Charge Injectione Q CL = 1 nF, VS = 0 V, RS = 0 ns pC Notes a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. g. RDS(on) = RDS(on) max. - RDS(on) min. h. Worst case isolation occurs on channel 4 due to proximity to the drain pin. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 4 Document Number: 70062 S11-0933-Rev. J, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 60 VS = 0 V for I D(off) VS = V D for ID(on) V+ = 15 V V- = - 15 V 40 60 CD(on) DG408 ID(off) CD(off) I D (pA) C S, D (pF) 20 40 DG409 ID(off) DG409 ID(on) 0 - 20 20 DG408 ID(on) CS(off) - 40 0 - 60 - 15 - 10 -5 0 5 10 15 0 2 VANALOG - Analog Voltage (V) Source/Drain Capacitance vs. Analog Voltage 15 - 20 - 60 DG408 ID(on), ID(off) - 140 - 15 5 0 DG409 ID(on) - 100 V+ = 15 V V- = - 15 V 10 DG409 ID(off) IS(off) (pA) I D (pA) 20 V+ = 15 V V- = - 15 V VS = - VD for ID(off) VD = V S(open) for ID(on) 20 12 Drain Leakage Current vs. Source/Drain Voltage (Single 12 V Supply) 100 60 4 6 8 10 VANALOG - Analog Voltage (V) V+ = 12 V V- = 0 V -5 - 10 - 10 -5 0 5 10 VD or V S - Drain or Source Voltage (V) 15 - 15 0 -5 5 VS - Source Voltage (V) - 10 10 15 Source Leakage Current vs. Source Voltage Drain Leakage Current vs. Source/Drain Voltage 2.0 - 100 mA VSUPPLY = ± 15 V - 10 mA 1.5 VEN = 2.4 V 1.0 I- V TH (V) - 1 mA - 100 µA - 10 µA VEN = 0 V or 5 V 0.5 - 1 µA 0.0 - 0.1 µA 4 8 12 16 20 + VSUPPLY (V) Input Switching Threshold vs. Supply Voltage Document Number: 70062 S11-0933-Rev. J, 16-May-11 100 1K 10K 100K 1M 10M Switching Frequency (Hz) Negative Supply Current vs. Switching Frequency www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 mA 100 µA VSUPPLY = 15 V 10 µA I+ 10 mA 1 µA 100 nA I+, I- I+ VEN = 2.4 V 1 mA 10 nA 1 nA 100 µA - (I-) VEN = 0 V or 5 V VSUPPLY = ± 15 V VA = 0 V VEN = 0 V 100 pA 10 µA 10 pA 100 1K 10K 100K 1M 10M - 55 - 35 - 15 25 5 45 65 85 Switching Frequency (Hz) Temperature (°C) Positive Supply Current vs. Switching Frequency ISUPPLY vs. Temperature 105 125 90 CL = 10 000 pF VIN = 5 Vp-p 80 20 70 60 10 Q (pC) I+ (µA) 15 V+ = 15 V V- = - 15 V VIN = 0 V VEN = 0 V 50 V+ = 15 V V- = - 15 V 40 30 20 5 10 V+ = 12 V V- = 0 V 0 0 - 55 - 35 - 15 25 5 65 45 85 105 - 10 - 15 125 - 10 Temperature (°C) -5 5 0 10 15 VS - Source Voltage (V) Positive Supply Current vs. Temperature (DG408) Charge Injection vs. Analog Voltage 160 120 140 V+ = 7.5 V 100 ±5V 120 R DS(on) (Ω) R DS(on) (Ω) 80 ±8V ± 10 V ± 12 V 60 10 V 100 12 V 80 15 V 60 20 V 40 22 V 40 0 - 20 V- = 0 V ± 20 V 20 ± 15 V 20 0 - 16 - 12 -8 -4 0 4 8 12 VD - Drain Voltage (V) RDS(on) vs. VD and Supply www.vishay.com 6 16 20 0 4 8 12 16 20 22 VD - Drain Voltage (V) RDS(on) vs. VD and Supply (Single Supply) Document Number: 70062 S11-0933-Rev. J, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 130 80 V+ = 15 V V- = - 15 V 70 85 °C 60 125 °C 50 90 85 °C 40 RDS(on) () R DS(on) (Ω) 125 °C 110 25 °C 30 25 °C 70 0 °C - 40 °C 50 20 0 °C - 40 °C - 55 °C - 55 °C 30 10 0 V+ = 12 V V- = 0 V 10 - 10 - 15 -5 5 0 10 0 15 6 8 10 12 VD - Drain Voltage (V) RDS(on) vs. VD and Temperature RDS(on) vs. VD and Temperature (Single Supply) - 150 1 RL = 1 kΩ V+ = 15 V V- = - 15 V RL = 1 kΩ - 130 0 V+ = 15 V V- = - 15 V Ref. 1 VRMS -1 LOSS (dB) - 110 (dB) 4 2 VD - Drain Voltage (V) - 90 Off-Isolation - 70 -2 -3 -4 Crosstalk - 50 RL = 50 Ω -5 - 30 -6 100 1K 10K 100K 1M 10M 10 100M 10 0 1K f - Frequency (Hz) 10K 100K 1M 10M 100M f - Frequency (Hz) Off Isolation and Crosstalk vs. Frequency Insertion Loss vs. Frequency 140 275 250 120 225 t (ns) t (ns) tTRANS 100 tOFF(EN) 200 tTRANS 175 tOFF(EN) tON(EN) 80 150 tON(EN) 125 60 ± 10 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22 100 8 9 10 11 12 13 14 VSUPPLY (V) VSUPPLY (V) Switching Time vs. Bipolar Supply Switching Time vs. Single Supply Document Number: 70062 S11-0933-Rev. J, 16-May-11 15 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix SCHEMATIC DIAGRAM (Typical Channel) V+ VREF GND D A0 V+ Level Shift AX V- Decode/ Drive S1 V+ EN Sn V- Fig. 1 TEST CIRCUITS + 15 V V+ A2 S1 A1 ± 10 V S2 - S7 A0 DG408 S8 EN ± 10 V VO D GND V- 50 % 0V 35 pF 300 Ω 50 Ω Logic Input tr < 20 ns tf < 20 ns 3V - 15 V VS1 90 % Switch Output + 15 V VO 0V V+ A1 A0 ± 10 V S1 90 % VS8 S1a - S4a, Da DG409 S4b tTRANS ± 10 V S1 ON VO Db EN GND tTRANS S8 ON V300 Ω 50 Ω 35 pF - 15 V Fig. 2 - Transition Time www.vishay.com 8 Document Number: 70062 S11-0933-Rev. J, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix TEST CIRCUITS + 15 V V+ S1 -5V EN S2 - S8 A0 DG408 A1 A2 GND VO D V- 50 Ω Logic Input 50 % 0V 35 pF 1 kΩ tr < 20 ns tf < 20 ns 3V tON(EN) - 15 V tOFF(EN) 0V + 15 V 10 % Switch Output VO V+ S1b 90 % -5V VO EN S1a - S4a, Da S2b - S4b A0 DG409 A1 Db GND VO V- 50 Ω 35 pF 1 kΩ - 15 V Fig. 3 - Enable Switching Time + 15 V V+ EN + 2.4 V Logic Input All S and Da +5V tr < 20 ns tf < 20 ns 3V 50 % 0V A0 DG408 DG409 A1 A2 GND 50 Ω Db, D VO VS V- - 15 V 300 Ω 80 % Switch Output 35 pF VO 0V tOPEN Fig. 4 - Break-Before-Make Interval Document Number: 70062 S11-0933-Rev. J, 16-May-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix TEST CIRCUITS + 15 V Rg V+ SX Logic Input EN OFF ON OFF 0V A0 Channel Select 3V VO D A1 CL 10 nF A2 GND V- ΔVO Switch Output ΔVO is the measured voltage due to charge transfer error Q, when the channel turns off. Q = CL x ΔVO - 15 V Fig. 5 - Charge Injection + 15 V + 15 V VIN V+ SX VS Rg = 50 Ω VIN SX VS S8 A0 D V+ S1 S8 VO A1 A0 A2 GND RL 1 kΩ V- EN Rg = 50 Ω VO D A1 A2 GND EN RL 1 kΩ V- - 15 V VOUT Off Isolation = 20 log - 15 V VIN Crosstalk = 20 log VOUT VIN Fig. 7 - Crosstalk Fig. 6 - Off Isolation VS S1 + 15 V + 15 V V+ V+ Rg = 50 Ω S1 Meter A2 A0 D VO A1 Channel Select S8 A1 A0 A2 GND EN V- RL 1 kΩ - 15 V Insertion Loss = 20 log D GND VOUT EN V- HP4192A Impedance Analyzer or Equivalent f = 1 MHz - 15 V VIN Fig. 8 - Insertion Loss www.vishay.com 10 Fig. 9 - Source Drain Capacitance Document Number: 70062 S11-0933-Rev. J, 16-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG408, DG409 Vishay Siliconix APPLICATION HINTS Overvoltage Protection A very convenient form of overvoltage protection consists of adding two small signal diodes (1N4148, 1N914 type) in series with the supply pins (see figure 10). This arrangement effectively blocks the flow of reverse currents. It also floats the supply pin above or below the normal V+ or V- value. In this case the overvoltage signal actually becomes the power supply of the IC. From the point of view of the chip, nothing has changed, as long as the difference VS - (V-) does not exceed + 44 V. The addition of these diodes will reduce the analog signal range to 1 V below V+ and 1 V above V-, but it preserves the low channel resistance and low leakage characteristics. V+ 1N4148 SX D Vg DG408 1N4148 V- Fig. 10 - Overvoltage Protection Using Blocking Diodes Differential 4-Channel Sequential Multiplexer/Demultiplexer 8-Channel Sequential Multiplexer/Demultiplexer + 15 V V+ S1 GND V+ S1a V- S3 S4 DG408 D NC DM7493 QB QC S2b QA r01 r02 GND NC Db S3b A1 A2 S4b A0 EN QD AIN Differential Analog Outputs (Inputs) S1b + 15 V BIN Da DG409 S7 Clock In V- S4a S6 + 15 V GND S3a Differential Analog Inputs (Outputs) S5 S8 A0 - 15 V S2a Analog Output (Input) S2 Analog Inputs (Outputs) + 15 V - 15 V Clock In J Q 1/2 MM74C73 CLK K CLEAR + 15 V Q GND A1 EN J Q 1/2 MM74C73 CLK NC Q K NC CLEAR 6 Enable In Reset Enable (MUX On-Off Control) Fig. 11 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70062. Document Number: 70062 S11-0933-Rev. J, 16-May-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Package Information Vishay Siliconix CERDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E1 E 1 2 3 4 5 6 7 8 D S Q1 A A1 L1 L e1 C B B1 MILLIMETERS Dim A A1 B B1 C D E E1 e1 eA L L1 Q1 S ∝ eA INCHES Min Max Min Max 4.06 5.08 0.160 0.200 0.51 1.14 0.020 0.045 0.38 0.51 0.015 0.020 1.14 1.65 0.045 0.065 0.20 0.30 0.008 0.012 19.05 19.56 0.750 0.770 7.62 8.26 0.300 0.325 6.60 7.62 0.260 0.300 2.54 BSC ∝ 0.100 BSC 7.62 BSC 0.300 BSC 3.18 3.81 0.125 0.150 3.81 5.08 0.150 0.200 1.27 2.16 0.050 0.085 0.38 1.14 0.015 0.045 0° 15° 0° 15° ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5403 Document Number: 71282 03-Jul-01 www.vishay.com 1 Packaging Information Vishay Siliconix 20ĆLEAD LCC A1 D L1 A Dim 28 e 1 2 E A A1 B D E e L L1 MILLIMETERS Min Max INCHES Min Max 1.37 2.24 0.054 0.088 1.63 2.54 0.064 0.100 0.56 0.71 0.022 0.028 8.69 9.09 0.342 0.358 8.69 9.09 0.442 0.358 1.27 BSC 0.050 BSC 1.14 1.40 0.045 0.055 1.96 2.36 0.077 0.093 ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5321 L Document Number: 71290 02-Jul-01 B www.vishay.com 1 Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 0.38 B 0.22 0.28 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 23-Oct-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1