1N4151WS www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box please see PARTS TABLE PART 1N4151WS ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS Single diode A5 Tape and reel 1N4151WS-E3-08 or 1N4151WS-E3-18 1N4151WS-HE3-08 or 1N4151WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 50 V VRRM 75 V f 50 Hz IF(AV) 150 mA t < 1 s and Tj = 25 °C IFSM 500 mA Ptot 200 mW SYMBOL VALUE UNIT RthJA 650 K/W Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Junction temperature Note (1) Valid provided that electrodes are kept at ambient temperature. Rev. 1.5, 14-May-13 Document Number: 85847 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4151WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Leakage current Reverse breakdown voltage Capacitance TEST CONDITION SYMBOL IF = 50 mA VF 1 V VR = 50 V IR 50 nA 50 μA 2 pF VR = 20 V, Tj = 150 °C IR IR = 5 µA (pulsed) V(BR) MIN. TYP. MAX. 75 V VF = VR = 0 V Reverse recovery time UNIT IF = 10 mA, IR = 10 mA iR = 1 mA trr 4 ns IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr 2 ns T j = 100 ° C 100 10 25 ° C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 V F - Forward Voltage (V) 18742 Fig. 1 - Forward Current vs. Forward Voltage rf - Dynamic Forward Resistance (Ω) 10000 T j = 25 ° C f = 1 kHz 1000 100 10 1 0.01 18662 0.1 1 10 IF - Forward Current (mA) 100 Fig. 2 - Dynamic Forward Resistance vs. Forward Current Rev. 1.5, 14-May-13 1000 800 600 400 200 0 0 20 40 60 80 100 120 140 160180 200 Tamb - Ambient Temperature (°C) 18743 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature CD (VR)/CD (0 V) - Relative Capacitance (pF) I F - Forward Current (mA) 1000 Ptot - Admissible Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) T j = 25 ° C f = 1 MHz 1.1 1.0 0.9 0.8 0.7 0 18664 2 4 6 8 10 VR - Reverse Voltage (V) Fig. 4 - Relative Capacitance vs. Reverse Voltage Document Number: 85847 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4151WS www.vishay.com Vishay Semiconductors I R - Leakage Current (nA) 10000 1000 100 10 VR = 50 V 1 0 20 18744 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature (°C) Fig. 5 - Leakage Current vs. Junction Temperature 100 Peak Forward Current (A) I FRM - Admissible Repetitive I 18709 10 ν = t p /T ν =0 tp 0. 1 T = 1/f p I FRM t T 0. 2 1 10 -5 0. 5 10 -4 10 -3 10 -2 10 -1 1 10 tp - Pulse Length (s) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.5, 14-May-13 Document Number: 85847 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4151WS www.vishay.com Vishay Semiconductors 0.1 (0.004) max. 0° to 8 ° 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 Rev. 1.5, 14-May-13 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) Document Number: 85847 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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