1N4148W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • These diodes are also available in other case styles including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148-V. • Silicon epitaxial planar diode • Fast switching diodes • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART 1N4148W-V ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 75 V VRRM 100 V f 50 Hz IF(AV) 150 mA t < 1 s and Tj = 25 °C IFSM 500 mA Ptot 350 mW SYMBOL VALUE UNIT RthJA 375 K/W Junction temperature Tj 150 °C Storage temperature Tstg - 65 to + 150 °C Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge forward current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Thermal resistance junction to ambient air (1) Note (1) Valid provided that electrodes are kept at ambient temperature. Rev. 1.5, 27-Jul-12 Document Number: 85748 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148W-V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MAX. UNIT IF = 10 mA VF 1000 mV IF = 100 mA VF 1200 mV VR = 20 V IR 25 nA VR = 75 V IR 5 μA VR = 100 V IR 100 μA VR = 20 V, TJ = 150 °C IR 50 μA VF = VR = 0 V CD 4 pF Tested with 50 mA pulses, tp = 0.1 μs, rise time < 30 ns, fp = (5 to 100) kHz Vfr 2.5 V Reverse recovery time IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr 4 ns Rectification efficiency f = 100 MHz, VRF = 2 V Forward voltage Leakage current Diode capacitance Voltage rise when switching ON MIN. TYP. 0.45 RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT 60 Ω 5 kΩ 2 nF VRF = 2 V VO 17436 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 104 103 Tj = 25 °C 5 102 Tj = 100 °C 10 Tj = 25 °C 3 5 10 Rf (Ω) IF (mA) f = 1 kHz 2 1 2 102 5 2 10 10-1 5 2 10-2 0 1 VF (V) 17437 Fig. 1 - Forward Characteristics Rev. 1.5, 27-Jul-12 2 10-2 17438 10-1 1 10 102 IF (mA) Fig. 2 - Dynamic Forward Resistance vs. Forward Current Document Number: 85748 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148W-V www.vishay.com Vishay Semiconductors 104 500 5 450 2 103 350 5 300 2 IR (nA) Ptot - Power Dissipation (mW) 400 250 200 102 5 2 150 10 100 5 50 2 VR = 20 V 1 0 0 50 100 Tamb - Ambient Temperature (°C) 20809 0 150 100 17441 Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 200 Tj (°C) Fig. 5 - Leakage Current vs. Junction Temperature Tj = 25 °C 1.1 f = 1 MHz CD (VR) CD (0 V) 1.0 0.9 0.8 0.7 0 2 4 6 8 10 VR (V) 17440 Fig. 4 - Relative Capacitance vs. Reverse Voltage 100 5 4 3 2 I IFRM (A) 1 T = 1/fP IFRM 10 5 4 3 2 n = tP/T tP n=0 t T 0.1 0.2 0.5 5 4 3 2 0.1 10-5 17442 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 tP (s) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.5, 27-Jul-12 Document Number: 85748 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148W-V www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.5, 27-Jul-12 Document Number: 85748 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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