GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM (LLDRAM II ) 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.067Gb/s/pin data rate) • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock frequency) • 32M x 18 and 64M x 9 organizations available • 8 banks • Reduced cycle time (15 ns at 533 MHz) • Address Multiplexing (Nonmultiplexed address option available) • SRAM-type interface • Programmable Read Latency (RL), row cycle time, and burst sequence length • Balanced Read and Write Latencies in order to optimize data bus utilization • Data mask for Write commands • Differential input clocks (CK, CK) • Differential input data clocks (DKx, DKx) • On-chip DLL generates CK edge-aligned data and output data clock signals • Data valid signal (QVLD) • 32 ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32 ms) • 144-ball BGA package • HSTL I/O (1.5 V or 1.8 V nominal) • 25–60 matched impedance outputs • 2.5 V VEXT, 1.8 V VDD, 1.5 V or 1.8 V VDDQ I/O • On-die termination (ODT) RTT • Commerical and Industrial Temperature Commercial (+0° TC +95°C) Industrial (–40° TC +95°C) The GSI Technology 576Mb Low Latency DRAM (LLDRAM II) is a high speed memory device designed for high address rate data processing typically found in networking and telecommunications applications. The 8-bank architecture and low tRC allows access rates formerly only found in SRAMs. Rev: 1.03 11/2013 The Double Data Rate (DDR) I/O interface provides high bandwidth data transfers, clocking out two beats of data per clock cycle at the I/O balls. Source-synchronous clocking can be implemented on the host device with the provided freerunning data output clock. Commands, addresses, and control signals are single data rate signals clocked in by the True differential input clock transition, while input data is clocked in on both crossings of the input data clock(s). Read and Write data transfers always in short bursts. The burst length is programmable to 2, 4 or 8 by setting the Mode Register. The device is supplied with 2.5 V VEXT and 1.8 V VDD for the core, and 1.5 V or 1.8 V for the HSTL output drivers. Internally generated row addresses facilitate bank-scheduled refresh. The device is delivered in an efficent BGA 144-ball package. 1/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L 64M x 9 Mb Ball Assignments—144-Ball BGA—Top View 1 2 3 4 A VREF VSS VEXT B VDD DNU3 C VTT D 5 6 7 8 9 10 11 12 VSS VSS VEXT TMS TCK DNU3 VSS VSS Q0 D0 VDD DNU3 DNU3 VDDQ VDDQ Q1 D1 VTT A221 DNU3 DNU3 VSS VSS QK0 QK0 VSS E A21 DNU3 DNU3 VDDQ VDDQ Q2 D2 A20 F A5 DNU3 DNU3 VSS VSS Q3 D3 QVLD G A8 A6 A7 VDD VDD A2 A1 A0 H BA2 A9 VSS VSS VSS VSS A4 A3 J NF2 NF2 VDD VDD VDD VDD BA0 CK K DK DK VDD VDD VDD VDD BA1 CK L REF CS VSS VSS VSS VSS A14 A13 M WE A16 A17 VDD VDD A12 A11 A10 N A18 DNU3 DNU3 VSS VSS Q4 D4 A19 P A15 DNU3 DNU3 VDDQ VDDQ Q5 D5 DM R VSS DNU3 DNU3 VSS VSS Q6 D6 VSS T VTT DNU3 DNU3 VDDQ VDDQ Q7 D7 VTT U VDD DNU3 DNU3 VSS VSS Q8 D8 VDD V VREF ZQ VEXT VSS VSS VEXT TDO TDI Notes: 1. Reserved for future use. This pin may be connected to ground. 2. No function. This pin may have parasitic characteristics of a clock input signal. It may be connected to GND. 3. Do not use. This pin may have parasitic characteristics of an I/O. It may be connected to GND. Rev: 1.03 11/2013 2/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L 32M x 18 Ball Assignments—144-Ball BGA—Top View 1 2 3 4 A VREF VSS VEXT B VDD D4 C VTT D 5 6 7 8 9 10 11 12 VSS VSS VEXT TMS TCK Q4 VSS VSS Q0 D0 VDD D5 Q5 VDDQ VDDQ Q1 D1 VTT A221 D6 Q6 VSS VSS QK0 QK0 VSS E A212 D7 Q7 VDDQ VDDQ Q2 D2 A20 F A5 D8 Q8 VSS VSS Q3 D3 QVLD G A8 A6 A7 VDD VDD A2 A1 A0 H BA2 A9 VSS VSS VSS VSS A4 A3 J NF3 NF3 VDD VDD VDD VDD BA0 CK K DK DK VDD VDD VDD VDD BA1 CK L REF CS VSS VSS VSS VSS A14 A13 M WE A16 A17 VDD VDD A12 A11 A10 N A18 D14 Q14 VSS VSS Q9 D9 A19 P A15 D15 Q15 VDDQ VDDQ Q10 D10 DM R VSS QK1 QK1 VSS VSS Q11 D11 VSS T VTT D16 Q16 VDDQ VDDQ Q12 D12 VTT U VDD D17 Q17 VSS VSS Q13 D13 VDD V VREF ZQ VEXT VSS VSS VEXT TDO TDI Notes: 1. Reserved for future use. This pin may be connected to GND. 2. Reserved for future use. This pin may have parasitic characteristics of an address input signal. It may be connected to GND. 3. No function. This pin may have parasitic characteristics of a clock input signal. It may be connected to GND. Rev: 1.03 11/2013 3/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Ball Descriptions Symbol Type Description A0–A21 Input Address Inputs—A0–A21 define the row and column addresses for Read and Write Operations. During a Mode Register Set (MRS), the address inputs define the register settings. They are sampled at the rising edge of CK. BA0–B2 Input Bank Address inputs—Select to which internal bank a command is being applied. CK, CK Input Input Clock—CK and CK are differential input clocks. Addresses and commands are latched on the rising edge of CK. CK is ideally 180º out of phase with CK. CS Input Chip Select—CS enables the command decoder when Low and disables it when High. When the command decoder is disabled, new commands are ignored, but internal operations continue. D0–D17 Input Data Input—The D signals form the 18-bit input data bus. During Write commands, the data is sampled at both edges of DK. DK, DK Input Input Data Clock—DK and DK are the differential input data clocks. All input data is referenced to both edges of DK. DK is ideally 180º out of phase with DK. In both the x9 and x18 devices, all Ds are referenced to DK and DK. DM Input Input Data Mask—The DM signal is the input mask signal for Write data. Input data is masked when DM is sampled High. DM is sampled on both edges of DK. Tie signal to ground if not used. TCK Input IEEE 1149.1 clock input—This ball must be tied to VSS if the JTAG function is not used. TMS, TDI Input IEEE 1149.1 test inputs—These balls may be left as no connects if the JTAG function is not used. WE, REF Input Command Inputs—Sampled at the positive edge of CK, WE and REF define (together with CS) the command to be executed. VREF Input Input Reference Voltage—Nominally VDDQ/2. Provides a reference voltage for the input buffers. ZQ I/O External Impedance (25–60)—This signal is used to tune the device outputs to the system data bus impedance. Q output impedance is set to 0.2 * RQ, where RQ is a resistor from this signal to ground. Connecting ZQ to GND invokes the Minimum Impedance mode. Connecting ZQ to VDD invokes the maximum Impedance mode. Refer to the Mode Register Definition diagrams (Mode Register Bit 8 (M8)) to activate or deactivate this function. Q0–Q17 QKx, QKx Rev: 1.03 11/2013 Output Data Output—The Q signals form the 18-bit output data bus. During Read commands, the data is referenced to both edges of QK. Output Output Data Clocks—QKx and QKx are opposite polarity, output data clocks. They are free running, and during Reads, are edge-aligned with data output from the LLDRAM II. QKx is ideally 180º out of phase with QKx. For the x18 device, QK0 and QK0 are aligned with Q0–Q8, while QK1 and QK1 are aligned with Q9–Q17. For the x9 device, all Qs are aligned with QK0 and QK0. 4/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Ball Descriptions (Continued) Symbol Type QVLD Output Data Valid—The QVLD pin indicates valid output data. QVLD is edge-aligned with QKx and QKx. TDO Output IEEE 1149.1 Test Output—JTAG output. This ball may be left as no connect if the JTAG function is not used. VDD Supply Power Supply—Nominally, 1.8 V. See the DC Electrical Characteristics and Operating Conditions section for range. VDDQ Supply DQ Power Supply—Nominally, 1.5 V or 1.8 V. Isolated on the device for improved noise immunity. See the DC Electrical Characteristics and Operating Conditions section for range. VEXT Supply Power Supply—Nominally, 2.5 V. See the DC Electrical Characteristics and Operating Conditions section for range. VSS Supply Ground VTT — A22 — Reserved for Future Use—This signal is not connected and may be connected to ground. DNU — Do Not Use—These balls may be connected to ground. NF — No Function—These balls can be connected to ground. Rev: 1.03 11/2013 Description Power Supply—Isolated termination supply. Nominally, VDDQ/2. See the DC Electrical Characteristics and Operating Conditions section for range. 5/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Operations Initialization A specific power-up and initialization sequence must be observed. Other sequences may result in undefined operations or permanent damage to the device. Power-up: 1. Apply power (VEXT, VDD, VDDQ, VREF, VTT) . Start clock after the supply voltages are stable. Apply VDD and VEXT before or at the same time as VDDQ1. Apply VDDQ before or at the same time as VREF and VTT. The chip starts internal initlization only after both voltages approach their nominal levels. CK/CK must meet VID(DC) prior to being applied2. Apply only NOP commands to start. Ensuring CK/CK meet VID(DC) while loading NOP commands guarantees that the LLDRAM II will not receive damaging commands during initialization. 2. Idle with continuing NOP commands for 200s (MIN). 3. Issue three or more consecutive MRS commands: two or more dummies plus one valid MRS. The consecutive MRS commands will reset internal logic of the LLDRAM II. tMRSC does not need to be met between these consecutive commands. Address pins should be held Low during the dummy MRS commands. 4. tMRSC after the valid MRS, issues an AUTO REFRESH command to all 8 banks in any order (along with 1024 NOP commands) prior to normal operation. As always, tRC must be met between any AUTO REFRESH and any subsequent valid command to the same bank. Notes: 1. It is possible to apply VDDQ before VDD. However, when doing this, the Ds, DM, Qs and all other pins with an output driver, will go High instead of tri-stating. These pins will remain High until VDD is at the same level as VDDQ. Care should be taken to avoid bus conflicts during this period. 2. If VID(DC) on CK/CK can not be met prior to being applied to the LLDRAM II, placing a large external resistor from CS to VDD is a viable option for ensuring the command bus does not receive unwanted commands during this unspecified state. Rev: 1.03 11/2013 6/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Power–Up Initialization Sequence VEXT VDD VDDQ VREF VTT 200us Min Mode Initialization tMRSC Refresh All Banks(5) tCK tCKH 1024 Cycles NOP Cycles Min tCKL CK CK tDK tDKL tDKH DK DK Command ADDR NOP NOP MRS MRS MRS CODE(1,2) CODE(1,2) CODE(2) NOP AREF NOP AC ADDR Bank 0 BA AREF Bank 7 Valid DM D Notes: 1. 2. 3. 4. 5. Recommend all address pins held Low during dummy MRS commands. A10–A17 must be Low. DLL must be reset if tCK or VDD are changed. CK and CK must be separated at all times to prevent bogus commands from being issued. The sequence of the eight AUTO REFRESH commands (with respect to the 1024 NOP commands) does not matter. As is required for any operation, tRC must be met between an AUTO REFRESH command and a subsequent VALID command to the same bank. Rev: 1.03 11/2013 7/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Power–Up Initialization Flow Chart Step 1 VDD and VEXT ramp 2 VDDQ ramp 3 Apply VREF and VTT 4 Apply stable CK/CK and DK/DK 5 Wait at least 200s 6 Issue MRS command—A10–A17 must be Low 7 Issue MRS command—A10–A17 must be Low 8 Desired load mode register with A10–A17 Low 9 Assert NOP for tMRSC 10 Issue AUTO REFRESH to bank 0 11 Issue AUTO REFRESH to bank 1 12 Issue AUTO REFRESH to bank 2 13 Issue AUTO REFRESH to bank 3 14 Issue AUTO REFRESH to bank 4 15 Issue AUTO REFRESH to bank 5 16 Issue AUTO REFRESH to bank 6 17 Issue AUTO REFRESH to bank 7 18 Wait 1024 NOP commands* 19 Valid command Voltage rails can be applied simultaneously MRS commands must be on consecutive clock cycles *Note: The sequence of the eight AUTO REFRESH commands (with respect to the 1024 NOP commands) does not matter. As is required for any operation, tRC must be met between an AUTO REFRESH command and a subsequent VALID command to the same bank. Rev: 1.03 11/2013 8/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L DLL Reset Mode Register Bit 7 (M7) selects DLL Reset as is shown in the Mode Register Definition tables. The default setting for M7 is Low—DLL disabled. Once M7 is set High, 1024 cycles (5s at 200 MHz) are needed before a Read command can be issued. The delay allows the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a violation of the tCKQK parameter. A reset of the DLL is necessary if tCK or VDD is changed after the DLL has been enabled. To reset the DLL, set M7 is Low. After waiting tMRSC, an MRS command should be issued to set M7 High. 1024 clock cycles must pass before loading the next Read command. Driver Impedance Mapping The LLDRAM II is equipped with programmable impedance output buffers. Setting Mode Register Bit 8 (M8) High during the MRS command activates the output impedance control. Programmable impedance output buffers allow the user to match the driver impedance to the PCB trace impedance. To adjust the impedance, an external resistor (RQ) is connected between the ZQ ball and VSS. The value of the resistor must be five times the desired impedance (e.g., a 300 resistor produces an output impedance of 60). RQ values of 125–300 are supported, allowing an output impedance range of 25–60 (+/- 15 %). The drive impedance of uncompensated output transistors can change over time due to changes in supply voltage and die temperature. When drive impedance control is enabled in the MRS, the value of RQ is periodically sampled and needed impedance updates are made automatically. Updates do not affect normal device operation or signal timing. When Bit M8 is set Low during the MRS command, the output compensation circuits are still active but reference an internal resistance reference. The internal reference is imprecise and subject to temperature and voltage variations so output buffers are set to a nominal output impedance of 50, but are subject to a ±30 percent variance over Commercial temperature range. Rev: 1.03 11/2013 9/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L On–Die Termination (ODT) Mode Register Bit 9 (M9) set to 1 during an MRS command enables ODT. With ODT on, the Ds, Qs, and DM are terminated to VTT with a resistance, RTT. Command, address, QVLD, and clock signals are not terminated. The diagram below shows the equivalent circuit of a D receiver with ODT. When a Q begins to drive after a Read command is issued, the ODT function is briefly switched off. When a Q stops driving at the end of a data transfer, ODT is switched back on. D and DM pins are always terminated. On–Die Termination DC Parameters Description Symbol Min Max Units Notes Termination Voltage VTT 0.95 * VREF 1.05 * VREF V 1, 2 3 RTT On–Die Termination 125 185 Notes: 1. All voltages referenced to VSS (GND). 2. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF. 3. The RTT value is measured at 95°C TC. On–Die Termination–Equivalent Circuit VTT SW RTT Receiver D VREF Rev: 1.03 11/2013 10/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Read NOP Read On-Die Termination Burst Length 2, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 RC = 4 CK CK CMD RD NOP RD ADDR A A BA BA0 BA2 NOP NOP NOP NOP NOP NOP RL = 4 QKx QKx QVLD Q0a Q ODT Rev: 1.03 11/2013 ODT ON ODT OFF Q0b Q2a ODT ON 11/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. ODT OFF Q2b ODT ON © 2011, GSI Technology GS4576S09/18L Read-Write On-Die Termination Burst Length 2, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 CK CK CMD RD WT ADDR A A BA BA0 BA1 NOP NOP NOP NOP NOP NOP NOP WL = 5 DK DK DM D1a D D1b QKx QKx RL = 4 Q Q0a Q0b QVLD ODT Rev: 1.03 11/2013 ODT ON ODT OFF 12/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. ODT ON © 2011, GSI Technology GS4576S09/18L Read Burst On-die Termination Burst Length 2, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 RC = 4 CK CK CMD RD RD RD ADDR A A A BA BA0 BA1 BA2 NOP NOP NOP NOP NOP NOP RL = 4 QKx QKx QVLD Q0a Q ODT Rev: 1.03 11/2013 ODT ON Q0b Q1a Q1b ODT OFF 13/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Q2a Q2b ODT ON © 2011, GSI Technology GS4576S09/18L Commands Valid control commands are listed below. Any input commands not shown are illegal or reserved. All inputs must meet specified setup and hold times around the true crossing of CK. Description of Commands Command Description Notes DSEL/NOP The NOP command is used to perform a no operation to the LLDRAM II, which essentially deselects the chip. Use the NOP command to prevent unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. Output values depend on command history. 1 MRS The Mode Register is set via the address inputs A0–A17. See the Mode Register Definition diagrams for further information. The MRS command can only be issued when all banks are idle and no bursts are in progress. — READ The Read command is used to initiate a burst read access to a bank. The value on the BA0–BA2 inputs selects the bank, and the address provided on inputs A0–An selects the data location within the bank. 2 WRITE The Write command is used to initiate a burst write access to a bank. The value on the BA0–BA2 inputs selects the bank, and the address provided on inputs A0–An selects the data location within the bank. Input data appearing on the Ds is written to the memory array subject to the DM input logic level appearing coincident with the data. If the DM signal is registered Low, the corresponding data will be written to memory. If the DM signal is registered High, the corresponding data inputs will be ignored (that is, this part of the data word will not be written). 2 AREF The AREF command is used during normal operation of the LLDRAM II to refresh the memory content of a bank. The command is non-persistent, so it must be issued each time a refresh is required. The value on the BA0–BA2 inputs selects the bank. The refresh address is generated by an internal refresh controller, effectively making each address bit a “Don’t Care” during the AREF command. See the Auto Refresh section for more details. — Notes: 1. When the chip is deselected, internal NOP commands are generated and no commands are accepted. 2. For the value of “n”, see Address Widths at Different Burst Lengths table. Operation Command CS WE REF A0–An BA0–BA2 Notes Command Table Device Deselect/No Operation DSEL/NOP H X X X X 1 MRS MRS L L L CODE X 1, 3 Read READ L H H A BA 1, 2 Write WRITE L L H A BA 1, 2 Auto Refresh AREF L H L X BA 1 Notes: 1. X= Don’t Care; H = Logic High; L = Logic Low; A = Valid Address; BA = Valid Bank Address. 2. For the value of “n”, see Address Widths at Different Burst Lengths table. 3. Only A0–A17 are used for the MRS command. Rev: 1.03 11/2013 14/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L State Diagram Initialization Sequence DSEL/ NOP Write Read MRS AREF Notes: Automatic Sequence Command Sequence Rev: 1.03 11/2013 15/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Mode Register Set Mode Register Set controls the operating modes of the memory, including configuration, burst length, test mode, and I/O options. During an MRS command, the address inputs A0–A17 are sampled and stored in the Mode Register. Except during initialization to force internal reset, after a valid MRS command, tMRSC must be met before any command except NOP can be issued to the LLDRAM II. All banks must be idle and no bursts may be in progress when an MRS command is loaded. Note: Changing the burst length configuration may scramble previously written data. A burst length change must be assumed to invalidate all stored data. Mode Register Set CK CK CS WE REF CODE A(17:0) A(18:20) BA(2:0) Rev: 1.03 11/2013 16/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Mode Register Definition in Nonmultiplexed Address Mode A17 ... A10 A9 17–10 Reserved 1 9 ODT A8 A7 A6 8 7 6 IM A5 5 2 DLL NA AM A4 4 A3 A2 A1 3 2 1 BL 0 0 Off (default) 1 On M8 Drive Impedance 0 Internal 505 (default) 1 External (ZQ) Address Bus Mode Register (Mx) Config On Die Termination M9 A0 M2 M1 M0 Configuration 0 0 0 13 (default) 0 0 1 13 0 1 0 2 0 1 1 3 1 0 0 43 M7 DLL Reset 0 DLL reset4 (default) 1 0 1 5 1 DLL enabled 1 1 0 Reserved 1 1 1 Reserved M5 Address MUX 0 Nonmulitplexed (default) 1 Multiplexed M4 M3 Burst Length 0 0 2 (default) 0 1 4 1 0 8 1 1 Reserved Notes: 1. A10–A17 must be set to zero; A18–An = “Don’t Care”. 2. A6 not used in MRS. 3. BL = 8 is not available. 4. DLL RESET turns the DLL off. 5. +/–30% over rated temperature range. Rev: 1.03 11/2013 17/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Configuration Tables The relationship between cycle time and read/write latency is selected by the user. The configuration table below lists valid configurations available via Mode Register bits M0, M1, and M2 and the clock frequencies supported for each setting. Write Latency is equal to the Read Latency plus one in each configuration to reduce bus conflicts. Cycle Time and Read/Write Latency Configuration Table Parameter Configuration Units 12 2 3 42, 3 5 tRC 4 6 8 3 5 tCK tRL 4 6 8 3 5 tCK tWL 5 7 9 4 6 tCK Valid Frequency Range 266–175 400–175 533–175 200–175 333–175 MHz Notes: 1. tRC < 20 ns in any configuration is only available with –18 and –24 speed grades. 2. BL= 8 is not available. 3. The minimum tRC is typically 3 cycles, except in the case of a Write followed by a Read to the same bank. In this instance the minimum tRC is 4 cycles. Rev: 1.03 11/2013 18/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Burst Length Read and Write data transfers occur in bursts of 2, 4, or 8 beats. Burst Length is programmed by the user via Mode Register Bit 3 (M3) and Bit 4 (M4). The Read Burst Length diagrams illustrate the different burst lengths with respect to a Read Command. Changes in the burst length affect the width of the address bus. Note: Changing the burst length configuration may scramble previously written data. A burst length change must be assumed to invalidate all stored data. Read Burst Lengths Example BL=2 CK CK Command READ QKx QKx QVLD RL = 5 Q Q0 Q1 Example BL=4 CK1 CK1 Command1 READ NOP NOP NOP NOP NOP NOP NOP NOP NOP QKx1 QKx1 QVLD1 RL = 5 Q1 Q0 Q1 Q2 Q3 Example BL=8 CK2 CK2 Command2 READ NOP NOP NOP NOP NOP QKx2 QKx2 QVLD2 RL = 5 Q2 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Address Widths at Different Burst Lengths Configuration Burst Length Rev: 1.03 11/2013 x9 x 18 2 A0–A21 A0–A20 4 A0–A20 A0–A19 8 A0–A19 A0–A18 19/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Write Write data transfers are launched with a Write command, as shown below. A valid address must be provided during the Write command. During Write data transfers, each beat of incoming data is registered on crossings of DK and DK until the burst transfer is complete. Write Latency (WL) that is always one cycle longer than the programmed Read Latency (RL), so the first valid data registered at the first True crossing of the DK clocks WL cycles after the Write command. Since the input and output buses are separated, any Write burst may be followed by a subsequent Read command without encountering external data bus contention. The Write-to-Read timing diagrams illustrate the timing requirements for a Write followed by a Read. Setup and hold times for incoming D relative to the DK edges are specified as tDS and tDH. Input data may be masked a High on an associated DM pin. The setup and hold times for the DM signal are tDS and tDH. Write Command CK CK CS WE REF ADDRESS A BANK ADDRESS BA Rev: 1.03 11/2013 20/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Write Burst Length 2, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 RC = 4 CK CK CMD WR WR WR WR WR WR WR WR WR ADDR A A A A A A A A A BA BA0 BA1 BA2 BA3 BA0 BA4 BA5 BA6 BA7 WL = 5 DK DK DM D D0a D0b D1a D1b D2a D2b D3a D3b Write Burst Length 4, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 RC = 4 CK CK CMD WR NOP WR NOP WR NOP WR NOP WR ADDR A A A A A BA BA0 BA1 BA0 BA3 BA0 WL = 5 DK DK DM D Rev: 1.03 11/2013 D0a D0b D0c 21/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. D0d D1a D1b D1c D1d © 2011, GSI Technology GS4576S09/18L Write-Read Burst Length 2, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 RL = 4 CK CK CMD WR RD RD ADDR A A A BA BA0 BA1 BA2 NOP NOP NOP NOP NOP NOP NOP WL = 5 DK DK DM D D0a Q D0b Q1a Q1b Q2a Q2b QVLD QKx QKx Rev: 1.03 11/2013 22/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Write-Read Burst Length 4, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 CK CK CMD WR RD WR RD ADDR A A A A BA0 BA1 BA2 BA3 BA NOP NOP NOP NOP NOP NOP WL = 5 DK DK DM D0a D D0b D0c D0d D2a D2b D2c D2d Q1a Q1b Q1c Q1d Q3a Q3b Q3c RL = 4 QKx QKx Q Q3d QVLD Rev: 1.03 11/2013 23/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Read Read data transfers are launched with a Read command, as shown below. Read Addresses must provided with the Read command. Each beat of a Read data transfer is edge-aligned with the QKx signals. After a programmable Read Latency, data is available at the outputs. One half clock cycle prior to valid data on the read bus, the data valid signal (QVLD) is driven High. QVLD is also edgealigned with the QKx signals. The QK clocks are free-running. The skew between QK and the crossing point of CK is specified as tCKQK. tQKQ0 is the skew between QK0 and the last valid data edge generated at the Q signals associated with QK0 (tQKQ0 is referenced to Q0–Q8). tQKQ1 is the skew between QK1 and the last valid data edge generated at the Q signals associated with QK1 (tQKQ1 is referenced to Q9–Q17). tQKQx is derived at each QKx clock edge and is not cumulative over time. tQKQ is defined as the skew between either QK differential pair and any output data edge. At the end of a burst transfer, assuming no other commands have been initiated, output data (Q) will go High-Z. The QVLD signal transitions Low on the beat of a Read burst. Note that if CK/CK violates the VID(DC) specification while a Read burst is occurring, QVLD remains High until a dummy Read command is issued. Back-to-back Read commands are possible, producing a continuous flow of output data. The data valid window specification is referenced to QK transitions and is defined as: tQHP – (tQKQ [MAX] + |tQKQ [MIN]|). See the Read Data Valid Window section for illustration. Any Read transfer may be followed by a subsequent Write command. The Read-to-Write timing diagram illustrates the timing requirements for a Read followed by a Write. Read Command CK CK CS WE REF ADDRESS A BANK ADDRESS BA Rev: 1.03 11/2013 24/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Read Burst Length 2, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 RC = 4 CK CK CMD RD RD RD RD RD RD RD RD RD ADDR A A A A A A A A A BA BA0 BA1 BA2 BA3 BA0 BA7 BA6 BA5 BA4 RL = 4 QKx QKx QVLD Q Q0a Q0b Q1a Q1b Q2a Q2b Q3a Q3b Q0a Read Burst Length 4, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 RC = 4 CK CK CMD RD NOP RD NOP RD NOP RD NOP RD ADDR A A A A A BA BA0 BA1 BA0 BA1 BA3 RL = 4 QKx QKx QVLD Q Rev: 1.03 11/2013 Q0a Q0b Q0c Q0d 25/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Q1a Q1b Q1c Q1d Q0a © 2011, GSI Technology GS4576S09/18L Read-Write Burst Length 2, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 CK CK CMD WR RD RD ADDR A A A BA BA0 BA1 BA2 NOP NOP NOP NOP NOP NOP NOP WL = 5 DK DK DM D D0a D0b RL = 4 QKx QKx Q Q1a Q1b Q2a Q2b QVLD Rev: 1.03 11/2013 26/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Read-Write Burst Length 4, Configuration 1 T0 T1 T2 T3 T4 T5 T6 T7 CK CK CMD RD WR RD ADDR A A A BA BA0 BA1 BA2 NOP NOP NOP NOP NOP WL = 5 DK DK DM D D1a D1b D1c D1d RL = 4 QKx QKx Q Q0a Q0b Q0c Q0d Q2a Q2b Q2c QVLD Rev: 1.03 11/2013 27/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Auto Refresh The Auto Refresh (AREF) command launches a REFRESH cycle on one row in the bank addressed. Refresh row addresses are generated by an internal refresh counter, so address inputs are Don’t Care, but a bank addresses (BA 2:0) must be provided during the AREF command. A refresh may be contining in one bank while other commands, including other AREF commands, are launched in other banks. The delay between the AREF command and a READ, WRITE or AREF command to the same bank must be at least tRC. The entire memory must be refreshed every 32 ms (tREF). This means that this 576Mb device requires 128K refresh cycles at an average periodic interval of 0.24s MAX (actual periodic refresh interval is 32 ms/16K rows/8 = 0.244s). To improve efficiency, eight AREF commands (one for each bank) can be launched at periodic intervals of 1.95s (32 ms/16K rows = 1.95s). The Auto Refresh Cycle diagram illustrates an example of a refresh sequence. Auto Refresh (AREF) Command CK CK CS WE REF ADDRESS BA BANK ADDRESS Auto Refresh Cycle CK CK CMD AREF AREF Bank BA0 BA3 Rev: 1.03 11/2013 NOP AREF BA4 28/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Address Multiplexing LLDRAM II defaults to “broadside” addressing at power up, meaning, it registers all address inputs on a single clock transition. However, for most configurations of the device, considerable efficiency can be gained by operating in Address Multiplexed mode, cutting the address pin count on the host device in half. In Multiplexed Address mode, the address is loaded in two consecutive clock transitions. Broadside Addressing only improves Continuous Burst mode data transfer efficiency of Burst Length 2 (BL = 2) configuration. In Address Multiplex mode, bank addresses are loaded on the same clock transition as Command and the first half of the address, Ax. The 576Mb Address Mapping in Multiplexed Address Mode table and Cycle Time and Read/Write Latency Configuration in Mulitplexed Mode table show the addresses needed for both the first and second clock transitions (Ax and Ay, respectively). The AREF command does not require an address on the second clock transition, as only the Bank Address are loaded for refresh commands. Therefore, AREF commands may be issued on consecutive clocks, even when in Address Multiplex mode. Setting Mode Register Bit 5 (M5) to 1 in the Mode Register activates the Multiplexed Address mode. Once this bit is set subsequent MRS, READ, and WRITE operate as described in the Multiplexed Address Mode diagram. Rev: 1.03 11/2013 29/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Power-Up Multiplexed Address Mode VEXT VDD VDDQ VREF VTT 200us Min tMRSC tMRSC tCK Refresh 1024 NOP cycles Min All Banks(9) tCKL tCKH CK CK tDK tDKH tDKL DK DK Command ADDR NOP NOP MRS MRS CODE(1,2) CODE(1,2) MRS CODE(2,3) MRS Ax(2,4) NOP RF0 RF7 NOP AC Valid(5) Ay(2) Bank 0 Bank Rev: 1.03 11/2013 NOP 30/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Bank 7 Valid(5) © 2011, GSI Technology GS4576S09/18L MRS Command In Multiplexed Mode The Mode Register Set command stores the data for controlling the RAM into the Mode Register. The register allows the user to modify Read and Write pipeline length, burst length, test mode, and I/O options. The Multiplexed MRS command requires two cycles to complete The Ax address is sampled on the true crossing of clock with the MRS Command. The Ay address and a required NOP command are captured on the next next crossing of clock. After issuing a valid MRS command, tMRSC must be met before any READ, WRITE, MRS, or AREF command can be issued to the LLDRAM II. This statement does not apply to the consecutive MRS commands needed for internal logic reset during the initialization routine. The MRS command can only be issued when all banks are idle and no bursts are in progress. Note: The data written by the prior burst length is not guaranteed to be accurate when the burst length of the device is changed. MRS Command in Multiplexed Mode MRS CK CK CS WE REF A(9:0) Ax Ay A(18:10) BA(2:0) Notes: 1. Recommended that all address pins held Low during dummy MRS commands. 2. A10–A18 must be Low. 3. Set address A5 High. This enbles the part to enter Multiplexed Address mode when in Non-Multiplexed mode operation. Multiplexed Address mode can also be entered at some later time by issuing an MRS command with A5 High. Once address Bit A5 is set High, tMRSC must be satisfied before the two-cycle multiplexed mode MRS command is issued. 4. Address A5 must be set High. This and the following step set the desired mode register once the LLDRAM II is in Multiplexed Address mode. 5. Any command or address. 6. The above sequence must be followed in order to power up the LLDRAM II in the Multiplexed Address mode. 7. DLL must be reset if tCK or VDD are changed. 8. CK and CK must separated at all times to prevent bogus commands from being issued. 9. The sequence of the eight AUTO REFRESH commands (with respect to the 1024 NOP commands) does not matter. As is required for any operation, tRC must be met between an AUTO REFRESH command and a subsequent VALID command to the same bank. Rev: 1.03 11/2013 31/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Mode Register Definition in Multiplexed Address Mode Ax Ay 18–10 Reserved M9 A9 A18...A10 A18...A10 1 9 ODT Off (default) 1 On Drive Impedance 0 Internal 503 (default) 1 External (ZQ) A9 8 IM 7 A8 6 A5 5 5 DLL NA AM A4 A3 4 3 A4 2 BL A0 A3 1 0 Mode Register (Mx) Config On Die Termination 0 M8 A8 M2 M1 M0 Configuration 0 0 0 12 (default) 0 0 1 12 0 1 0 2 0 1 1 3 1 0 0 42 M7 DLL Reset 0 DLL reset4 (default) 1 0 1 5 1 DLL enabled 1 1 0 Reserved 1 1 1 Reserved M5 Address MUX 0 Nonmulitplexed (default) 1 Multiplexed M4 M3 Burst Length 0 0 2 (default) 0 1 4 1 0 8 1 1 Reserved Notes: 1. A10–A18 must be set to zero. 2. BL = 8 is not available. 3. +/–30% over rated temperature range. 4. DLL RESET turns the DLL off. 5. Ay8 not used in MRS. 6. BA0–BA2 are “Don’t Care”. 7. Addresses A0, A3, A4, A5, A8, and A9 must be set as shown in order to activate the Mode Register in the Multiplexed Address mode. Rev: 1.03 11/2013 32/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L 576Mb Address Mapping in Multiplexed Address Mode Burst Length Data Width Ball 2 x18 4 8 2 x9 4 8 Address A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay A20 A1 A2 X A6 A7 A19 A11 A12 A16 A15 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay X A1 A2 X A6 A7 A19 A11 A12 A16 A15 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay X A1 A2 X A6 A7 X A11 A12 A16 A15 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay A20 A1 A2 A21 A6 A7 A19 A11 A12 A16 A15 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay A20 A1 A2 X A6 A7 A19 A11 A12 A16 A15 Ax A0 A3 A4 A5 A8 A9 A10 A13 A14 A17 A18 Ay X A1 A2 X A6 A7 A19 A11 A12 A16 A15 Notes: X= Don’t Care. Configuration in Mulitplexed Mode In Multiplexed Address mode, the Read and Write latencies are increased by one clock cycle. However, the LLDRAM II cycle time remains the same as when in Nonmultiplexed Address mode. Cycle Time and Read/Write Latency Configuration in Mulitplexed Mode Parameter Configuration Units 12 2 3 42, 3 5 tRC 4 6 8 3 5 tCK tRL 5 7 9 4 6 tCK tWL 6 8 10 5 7 tCK Valid Frequency Range 266–175 400–175 533–175 200–175 333–175 MHz Notes: 1. tRC < 20 ns in any configuration is only available with –24 and –18 speed grades. 2. BL = 8 is not available. 3. The minimum tRC is typically 3 cycles, except in the case of a Write followed by a Read to the same bank. In this instance the minimum tRC is 4 cycles. Rev: 1.03 11/2013 33/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Write Command in Multiplexed Mode Address Multiplexed Write data transfers are launched with a Write command, as shown below. A valid address must be provided during the Write command. The Ax address must be loaded on the same true clock crossing used to load the Write command and the Bank address. The Ay address and a NOP command must be provided at the next clock crossing. During Write data transfers, each beat of incoming data is registered on crossings of DK and DK until the burst transfer is complete. Write Latency (WL) is always one cycle longer than the programmed Read Latency (RL). A Write burst may be followed by a Read command (assuming tRC is met). The Write-to-Read timing diagrams illustrate the timing requirements for a Write followed by a Read. Setup and hold times for incoming D relative to the DK edges are specified as tDS and tDH. Input data may be masked high on an associated DM pin. The setup and hold times for the DM signal are tDS and tDH. Write Command in Multiplexed Mode WRITE CK CK CS WE REF ADDRESS Ax BANK ADDRESS BA Ay Write Burst Length 4, Configuration 1 in Multiplexed Mode T0 T1 T2 T3 T4 T5 T6 T7 T8 RC = 4 CK CK CMD WR NOP WR NOP WR NOP WR NOP WR ADDR Ax Ay Ax Ay Ax Ay Ax Ay Ax BA BA0 BA1 BA0 BA3 BA0 WL = 6 DK DK DM D Rev: 1.03 11/2013 D0a 34/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. D0b D0c D0d D1a D1b © 2011, GSI Technology GS4576S09/18L Read Command in Multiplexed Mode Address Multiplexed Read data transfers are launched with a Read command, as shown below. A valid address must be provided during the READ command. The Ax address must be loaded on the same True clock crossing used to load the READ command and the Bank address. The Ay address and a NOP command must be provided at the next clock crossing. Each beat of a Read data transfer is edge-aligned with the QKx signals. After a programmable Read Latency, data is available at the outputs. One half clock cycle prior to valid data on the read bus, the data valid signal (QVLD) is driven High. QVLD is also edge-aligned with the QKx signals. The QK clocks are free-running. The skew between QK and the crossing point of CK is specified as tCKQK. tQKQ0 is the skew between QK0 and the last valid data edge generated at the Q signals associated with QK0 (tQKQ0 is referenced to Q0–Q8). tQKQ1 is the skew between QK1 and the last valid data edge generated at the Q signals associated with QK1 (tQKQ1 is referenced to Q9–Q17). tQKQx is derived at each QKx clock edge and is not cumulative over time. tQKQ is defined as the skew between either QK differential pair and any output data edge. At the end of a burst transfer, assuming no other commands have been initiated, output data (Q) will go High–Z. The QVLD signal transitions Low on the beat of a Read burst. Note that if CK/CK violates the VID(DC) specification while a Read burst is occurring, QVLD remains High until a dummy Read command is issued. Back-to-back Read commands are possible, producing a continuous flow of output data. The data valid window specification is referenced to QK transitions and is defined as: tQHP – (tQKQ [MAX] + |tQKQ [MIN]|). See the Read Data Valid Window section. Any Read transfer may be followed by a subsequent Write command. The Read-to-Write timing diagram illustrates the timing requirements for a Read followed by a Write. Read Command in Mulitplexed Mode READ CK CK CS WE REF Rev: 1.03 11/2013 ADDRESS Ax BANK ADDRESS BA Ay 35/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Read Burst Length 4, Configuration 1 in Multiplexed Mode T0 T1 T2 T3 T4 T5 T6 T7 T8 CK CK CMD RD NOP RD NOP RD NOP RD NOP RD ADDR Ax Ay Ax Ay Ax Ay Ax Ay Ax BA BA0 QKx BA1 BA2 BA0 BA1 RL = 5 QKx Q Q0a Q0b Q0c Q0d Q1a Q1b Q1c QVLD Rev: 1.03 11/2013 36/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Refresh Commands in Multiplexed Address Mode The AREF command launches a REFRESH cycle on one row in the bank addressed. Refresh row addresses are generated by an internal refresh counter. so address inputs are Don’t Care, but Bank addresses (BA 2:0) must be provided during the AREF command. A refresh may be continuing in one bank while other commands, including other AREF commands, are launched in other banks. The delay between the AREF command and a READ, WRITE or AREF command to the same bank must be at least tRC. The entire memory must be refreshed every 32 ms (tREF). This means that this 576Mb device requires 128K refresh cycles at an average periodic interval of 0.24s MAX (actual periodic refresh interval is 32 ms/16K rows/8 = 0.244s). To improve efficiency, eight AREF commands (one for each bank) can be launched at periodic intervals of 1.95s (32 ms/16K rows = 1.95s). The Auto Refresh Cycle diagram illustrates an example of a refresh sequence. Unlike READ and WRITE commands in Address Multiplex mode, all the information needed to execute an AREF command (the AREF command and the Band Address (BA 2:0)) is loaded in a single clock crossing, another AREF command (to a different bank) may be loaded on the next clock crossing. Consecutive Refresh Operations with Multiplexed Mode T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 AREF AREF AREF AREF AREF AREF AREF AREF T10 T11 CK CK CMD AC1 NOP ADDR Ax Ay BA BAn BA0 BA1 BA2 BA3 BA4 BA5 BA6 BA7 AC1 NOP Ax Ay BAn Notes: 1. 2. Any command. Bank n is chosen so that tRC is met. Rev: 1.03 11/2013 37/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Absolute Maximum Ratings Absolute Maximum Voltage (All voltages reference to VSS) Parameter Min Max Unit I/O Voltage –0.3 VDDQ + 0.3 V Voltage on VEXT supply –0.3 +2.8 V Voltage on VDD supply relative to VSS –0.3 +2.1 V Voltage on VDDQ supply relative to VSS –0.3 +2.1 V Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Absolute Maximum Temperature Parameter Temperature Range Symbol Min. Max. Unit Notes Storage Temperature — TSTG –55 +150 C° 1 — +110 C° 2 — +110 C° 2 Reliability junction temperature Commercial Industrial TJ Notes: 1. Max storage case temperature; TSTG is measured in the center of the package. 2. Temperatures greater than 110 C° may cause permanent damage to the device. This is a stress rating only and functional operation of the device at or above this is not implied. Exposure to the absolute maximum ratings condtions for extended periods may affect reliability of the part. Rev: 1.03 11/2013 38/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Recommended Operating Temperature and Thermal Impedance Like any other semiconcuctor device, the LLDRAM II must be operated within the temperature specifications shown in the Temperature Limits table for the device to meet datasheet specifications. The thermal impedance characteristics of the device are are listed below. In applications where the ambient temperature or PCB temperature are too high, use of forced air and/or heat sinks may be required in order to satisfy the case temperature specifications. Temperature Limits Temperature Range Parameter Symbol Commercial Operating junction temperature Industrial Commercial Operating case temperature Industrial TJ TC Min. Max. Unit Notes 0 +100 C° 1 –40 +100 C° 1 0 +95 C° 2, 3 –40 +95 C° 2, 3, 4 Notes: 1. Junction temperature depends upon package type, cycle time, loading, ambient temperature, and airflow. 2. Maximum operating case temperature, TC, is measured in the center of the package. 3. Device functionality is not guaranteed if the device exceeds maximum TC during operation. 4. Junction and case temperature specifications must be satisfied. Thermal Impedance Package Test PCB Substrate JA (C°/W) Airflow = 0 m/s JA (C°/W) Airflow = 1 m/s JA (C°/W) Airflow = 2 m/s JB (C°/W) JC (C°/W) BGA 2-layer TBD TBD TBD TBD TBD 4-layer 22.4 19.0 16.2 5.3 1.7 Notes: 1. Thermal Impedance data is based on a number of of samples from mulitple lots and should be viewed as a typical number. 2. Please refer to JEDEC standard JESD51-6. 3. The characteristics of the test fixture PCB influence reported thermal characteristics of the device. The minimal metalization of a 2-layer board tends to minimize the utility of the junction-to-board heat path. The 4-layer test fixture PCB is intended to highlight the effect of connection to power planes typically found in the PCBs used in most applications. Be advised that a good thermal path to the PCB can result in cooling or heating of the RAM depending on PCB temperature. Rev: 1.03 11/2013 39/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Recommended DC Operating Conditions and Electrical Characteristics Description Conditions Symbol Min. Max. Unit Notes Supply Voltage — VEXT 2.38 2.63 V — Supply Voltage — VDD 1.7 1.9 V 2 Isolated Output Buffer Supply — VDDQ 1.4 VDD V 2, 3 Reference Voltage — VREF 0.49 * VDDQ 0.51 * VDDQ V 4, 5, 6 Termination Voltage — VTT 0.95 * VREF 1.05 * VREF V 7, 8 Input High (logic 1) voltage — VIH(DC) VREF + 0.1 VDDQ + 0.3 V 2 Input Low (logic 0) voltage — VIL(DC) VSS – 0.3 VREF – 0.1 V 2 Ouput High Current VOUT = VDDQ/2 IOH (VDDQ/2)/(1.15 * RQ/5) (VDDQ/2)/(0.85 * RQ/5) A 9, 10, 11 Ouput Low Current VOUT = VDDQ/2 IOL (VDDQ/2)/(1.15 * RQ/5) (VDDQ/2)/(0.85 * RQ/5) A 9, 10, 11 Clock Input Leakage Current 0 V VIN VDD ILC –5 5 A — Input Leakage Current 0 V VIN VDD ILI –5 5 A — Output Leakage Current 0 V VIN VDDQ ILO –5 5 A — Reference Voltage Current — IREF –5 5 A — Notes: 1. All voltages referenced to VSS (GND). This note applies to the entire table. 2. Overshoot VIH(AC) VDD+ 0.7 V for t tCK/2. Undershoot: VIL(AC) –0.5 V for t tCK/2. During normal operation VDDQ must not exceed VDD. Control input signals may not have pulse widthts less than tCK/2 or operate at frequencies exceeding tCK (MAX). 3. VDDQ can be set to a nominal 1.5 V ± 0.1 V or 1.8 V ± 0.1 V supply. 4. Typically the value of VREF is expected to be 0.5 * VDDQ of the transmitting device. VREF is expected to track variations in VDDQ. 5. Peak-to-Peak AC noise on VREF must not exceed ±2% of VREF(DC). 6. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (non-common mode) on VREF may not exceed ±2% of the DC value. Thus, from VDDQ/2, VREF is allowed ±2% VDDQ/2 for DC error and an addtional ±2% VDDQ/2 for AC noise. This measurement is to be taken at the nearest VREF bypass capacitor. 7. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF. 8. On-die termination may be selected using Mode Register Bit 9 (M9). A resistance RTT from each data input signal to the nearest VTT can be enabled. RTT = 125–185at 95° C TC. 9. IOH and IOL are defined as absolute values and are measured at VDDQ/2. IOH flows from the device, IOL flows into the device. 10. If Mode Register Bit 8 (M8) is 0, use RQ = 250in the equation in lieu of presence of an external impedance matched resistor. 11. For VOL and VOH, refer to the LLDRAM II IBIS models. Rev: 1.03 11/2013 40/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L DC Differential Input Clock Logic Levels Parameter Symbol Min. Max. Unit Notes Clock input voltage level: CK and CK VIN(DC) –0.3 VDDQ + 0.3 V 1–4 Clock input differential voltage: CK and CK VID(DC) 0.2 VDDQ + 0.6 V 1–5 Notes: 1. DKx and DKx have the same requirements as CK and CK. 2. All voltages referenced to VSS (GND). 3. The CK and CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross. The input reference level for signals other than CK/CK is VREF. 4. The CK and CK input slew rate must be 2 V/ns ( 4 V/ns if measured differentially). 5. VID is the magnitude of the difference between the input level on CK and the input level on CK. Recommended AC Operating Conditions and Electrical Characteristics Input AC Logic Levels Parameter Symbol Min. Max. Unit Notes Input High (logic 1) Voltage VIH VREF + 0.2 — V 1, 2, 3 Input Low (logic 0) Voltage VIL — VREF – 0.2 V 1, 2, 3 Notes: 1. All voltages referenced to VSS (GND). 2. The AC and the DC input level specifications are defined in the HSTL standard (that is, the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above (see drawing below) the DC input Low (High) level). 3. The minimum slew rate for the input signals used to test the device is 2 V/ns in the range between VIL(AC) and VIH(AC). Nominal tAS/ tCS/ tDS and tAH/ tCH/ tDH Slew Rate VDDQ VIH(AC)MIN VSWING(AC) (MIN) VIH(DC)MIN VREF VIL(DC)MAX VIL(AC)MAX VSS Rev: 1.03 11/2013 41/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L AC Differential Input Clock Levels Parameter Symbol Min. Max. Unit Notes Clock input differential voltage: CK and CK VID(AC) 0.4 VDDQ + 0.6 V 1–5 Clock input crossing point voltage: CK and CK VIX(AC) VDDQ/2 – 0.15 VDDQ/2 + 0.15 V 1–4, 6 Notes: 1. DKx and DKx have the same requirements as CK and CK. 2. All voltages referenced to VSS (GND). 3. The CK and CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross. The input reference level for signals other than CK/CK is VREF. 4. The CK and CK input slew rate must be 2 V/ns ( 4 V/ns if measured differentially). 5. VID is the magnitude of the difference between the input level on CK and the input level on CK. 6. The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track variations in the DC level of the same. Differential Clock Input Requirements VIN(DC) MAX Maximum Clock Level CK VIX(AC)MAX VDDQ/2 + 0.15 VDDQ/2 1 VDDQ/2 – 0.15 VID(DC)2 VID(AC)3 VIX(AC)MIN CK VIN(DC) MIN Minimum Clock Level Notes: 1. CK and CK must cross within this region. 2. CK and CK must meet at least VID(DC)MIN when static and centered around VDDQ/2. 3. Minimum peak-to-peak swing. 4. It is a violation to tristate CK and CK after the part is initialized. Rev: 1.03 11/2013 42/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Input Slew Rate Derating The Address and Command Setup and Hold Derating Values shown in the following table should be added to the default tAS/tCS/ tDS and tAH/tCH/tDH specifications when the slew rate of any of these input signals is less than the 2 V/ns. To determine the setup and hold time needed for a given slew rate, add the tAS/tCS default specification to the “tAS/tCS VREF to CK/CK Crossing” and the tAH/tCH default specification to the "tAH/tCH CK/CK Crossing to VREF" derated values in the Address and Command Setup and Hold Derating Values table. The derated data setup and hold values can be determined the same way using the “tDS VREF to CK/CK Crossing” and “tDH to CK/CK Crossing to VREF” values in the Data Setup and Hold Derating Values table. The derating values apply to all speed grades. The setup times in the table relate to a rising signal. The time from the rising signal crossing VIH(AC)MIN to the CK/CK cross point is static and must be maintained across all slew rates. The derated setup timing describes the point at which the rising signal crosses VREF(DC) to the CK/CK cross point. This derated value is calculated by determining the time needed to maintain the given slew rate and the delta between VIH(AC)MIN and the CK/CK cross point. All these same values are also valid for falling signals (with respect to VIL(AC)MAX and the CK/ CK cross point). The hold times in the table relate to falling signals. The time from the CK/CK cross point to when the signal crosses VIH(DC) MIN is static and must be maintained across all slew rates. The derated hold timing describes the delta between the CK/CK cross point to when the falling signal crosses VREF(DC). This derated value is calculated by determining the time needed to maintain the given slew rate and the delta between the CK/CK cross point and VIH(DC). The hold values are also valid for rising signals (with respect to VIL(DC)MAX and the CK and CK cross point). Note: The above descriptions also pertain to data setup and hold derating when CK/CK are replaced with DK/DK. Rev: 1.03 11/2013 43/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Command/Address Slew Rate (V/ns) 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 Rev: 1.03 11/2013 tAH/tCH CK/CK crossing to VIH(DC)MIN Units Address and Command Setup and Hold Derating Values 0 5 11 18 25 33 43 54 67 82 100 CK/CK Differential Slew Rate: 2.0 V/ns –100 0 –100 3 –100 6 –100 9 –100 13 –100 17 –100 22 –100 27 –100 34 –100 41 –100 50 –50 –50 –50 –50 –50 –50 –50 –50 –50 –50 –50 ps ps ps ps ps ps ps ps ps ps ps 30 35 41 48 55 63 73 84 97 112 130 CK/CK Differential Slew Rate: 1.5 V/ns –70 30 –70 33 –70 36 –70 39 –70 43 –70 47 –70 52 –70 57 –70 64 –70 71 –70 80 –20 –20 –20 –20 –20 –20 –20 –20 –20 –20 –20 ps ps ps ps ps ps ps ps ps ps ps 60 65 71 78 85 93 103 114 127 142 160 CK/CK Differential Slew Rate: 1.0 V/ns –40 60 –40 63 –40 66 –40 69 –40 73 –40 77 –40 82 –40 87 –40 94 –40 101 –40 110 10 10 10 10 10 10 10 10 10 10 10 ps ps ps ps ps ps ps ps ps ps ps tAS/tCS VREF to CK/CK crossing tAS/tCS VIH(AC)MIN CK/CK crossing tAH/tCH CK/CK crossing to VREF 44/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L tDS CK/CK crossing to VIH(DC)MIN Units Data Setup and Hold Derating Values DK/DK Differential Slew Rate: 2.0 V/ns –100 0 –100 3 –100 6 –100 9 –100 13 –100 17 –100 22 –100 27 –100 34 –100 41 –100 50 –50 –50 –50 –50 –50 –50 –50 –50 –50 –50 –50 ps ps ps ps ps ps ps ps ps ps ps 30 35 41 48 55 63 73 84 97 112 130 DK/DK Differential Slew Rate: 1.5 V/ns –70 30 –70 33 –70 36 –70 39 –70 43 –70 47 –70 52 –70 57 –70 64 –70 71 –70 80 –20 –20 –20 –20 –20 –20 –20 –20 –20 –20 –20 ps ps ps ps ps ps ps ps ps ps ps 60 65 71 78 85 93 103 114 127 142 160 DK/DK Differential Slew Rate: 1.0 V/ns –40 60 –40 63 –40 66 –40 69 –40 73 –40 77 –40 82 –40 87 –40 94 –40 101 –40 110 10 10 10 10 10 10 10 10 10 10 10 ps ps ps ps ps ps ps ps ps ps ps Data Slew Rate (V/ns) tDS VREF to CK/CK crossing 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0 5 11 18 25 33 43 54 67 82 100 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 Rev: 1.03 11/2013 tDS VIH(AC)MIN CK/CK crossing tDS CK/CK crossing to VREF 45/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Capacitance Description Symbol Address/control input capacitance CI Input/Output capacitance (D, Q, DM, and QK, QK) CO Clock capacitance (CK/CK and DK/DK) CCK JTAG pins CJTAG Conditions TA = 25° C; f = 100 MHz VDD = VDDQ = 1.8 V Min. Max. Unit 1.0 2.0 pF 3.0 4.5 pF 1.5 2.5 pF 1.5 4.5 pF Notes: 1. Capacitance is not tested on the ZQ pin. 2. JTAG Pins are tested at 50 MHz. Description Condition Symbol -18 -24 -25 -33 Standby Current tCK = idle, All banks idle; No inputs toggling. ISB1 (VDD) x9/x18 TBD TBD TBD TBD ISB1 (VEXT) TBD TBD TBD TBD Active Standby Current CS = 1, No commands; Bank address incremented and half address/data change once every four clock cycles. ISB2 (VDD) x9/x18 TBD TBD TBD TBD ISB2 (VEXT) TBD TBD TBD TBD IDD1 (VDD) x9/x18 TBD TBD TBD TBD Operational Current BL = 2, Sequential bank access; Bank transitions once every tRC; Half address transitions once every tRC; Read followed by Write sequence; Continuous data during Write Commands. IDD1 (VEXT) TBD TBD TBD TBD IDD2 (VDD) x9/x18 TBD TBD TBD TBD Operational Current BL = 4, Sequential bank access; Bank transitions once every tRC; Half address transitions once every tRC; Read followed by Write sequence; Continuous data during Write Commands. IDD2 (VEXT) TBD TBD TBD TBD IDD3 (VDD) x9/x18 TBD TBD TBD TBD Operational Current BL = 8, Sequential bank access; Bank transitions once every tRC; Half address transitions once every tRC. Read followed by Write sequence; Continuous data during Write Commands. IDD3 (VEXT) TBD TBD TBD TBD Burst Refresh Current Eight bank cyclic refresh; Continuous address/data; Command bus remains in refresh for all eight banks. IREF1 (VDD) x9/x18 TBD TBD TBD TBD IREF1 (VEXT) TBD TBD TBD TBD Distributed Refresh Current Single bank refresh; Sequential bank access; Half address transitions once every tRC; Continuous data. IREF2 (VDD)x9/x18 TBD TBD TBD TBD IREF2 (VEXT) TBD TBD TBD TBD Rev: 1.03 11/2013 46/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Units IDD Operating Conditions mA mA mA mA mA mA mA © 2011, GSI Technology GS4576S09/18L Description Condition Symbol -18 -24 -25 -33 Operating Burst Write Current Example BL= 2; Cyclic bank access; Half of address bits change every clock cycle; Continuous data; Measurement is taken during continuous Write. IDD2W (VDD) x9/x18 TBD TBD TBD TBD IDD2W (VEXT) TBD TBD TBD TBD Operating Burst Write Current Example BL= 4; Cyclic bank access; Half of address bits change every two clock cycles; Continuous data; Measurement is taken during continuous Write. IDD4W (VDD )x9/x18 TBD TBD TBD TBD IDD4W (VEXT) TBD TBD TBD TBD Operating Burst Write Current Example BL= 8; Cyclic bank access; Half of address bits change every four clock cycles; Continuous data; Measurement is taken during continuous Write. IDD8W (VDD) x9/x18 TBD TBD TBD TBD IDD8W (VEXT) TBD TBD TBD TBD Operating Burst Read Current Example BL= 2; Cyclic bank access; Half of address bits change every clock cycle; Continuous data; Measurement is taken during continuous Read. IDD2R (VDD)x9/x18 TBD TBD TBD TBD IDD2R (VEXT) TBD TBD TBD TBD Operating Burst Read Current Example BL= 4; Cyclic bank access; Half of address bits change every two clock cycles; Continuous data; Measurement is taken during continuous Read. IDD4R (VDD) x9/x18 TBD TBD TBD TBD IDD4R (VEXT) TBD TBD TBD TBD Operating Burst Read Current Example BL= 8; Cyclic bank access; Half of address bits change every four clock cycles; Continuous data; Measurement is taken during continuous Read. IDD8R (VDD) x9/x18 TBD TBD TBD TBD IDD8R (VEXT) TBD TBD TBD TBD Units IDD Operating Conditions (Continued) mA mA mA mA mA mA Notes: 1. IDD specifications are tested after the device is properly initialized and is operating at worst-case rated temperature and voltage specifications. 2. 3. 4. 5. 6. Definitions of IDD Conditions: 3a. Low is defined as VIN VIL(AC) MAX. 3b. High is defined as VIN VIH(AC) MIN. 3c. Stable is defined as inputs remaining at a High or Low level. 3d. Floating is defined as inputs at VREF = VDDQ/2. 3e. Continuous data is defined as half the D or Q signals changng between High and Low every half clock cycle (twice per clock). 3f. Continuous address is defined as half the address signals changing between High and Low every clock cycles (once per clock). 3g. Sequential bank access is defined as the bank address incrementing by one every tRC. 3h. Cyclic bank access is defined as the bank address incrementing by one for each command access. For BL = 2 this is every clock, for BL = 4 this is every other clock, and for BL = 8 this is every fourth clock. CS is High unless a Read, Write, AREF, or MRS command is registered. CS never transitions more than once per clock cycle. IDD parameters are specified with ODT disabled. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operations are tested for the full voltage range specified. IDD tests may use a VIL-to-VIH swing of up to 1.5 V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK), and parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2 V/ns in the range between VIL(AC) andVIH(AC). Rev: 1.03 11/2013 47/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L AC Electrical Characteristics –18 –24 –25 –33 Min Max Min Max Min Max Min Max Notes Symbol Units Parameter 1.875 5.7 2.5 5.7 2.5 5.7 3.3 5.7 ns — ns — Clock Input Clock Cycle Time tCK Input data clock cycle time tDK tCK tCK tCK tCK Clock jitter: period tJITPER –100 100 –150 150 –150 150 –200 200 ps 5, 6 Clock jitter: cycle-to-cycle tJITCC — 200 — 300 — 300 — 400 ps — Clock High Time tCKH tDKH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK — Clock Low Time tCKL tDKL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK — Clock to input data clock tCKDK –0.3 0.3 –0.45 0.5 –0.45 0.5 –0.45 1.2 ns — Mode register set cycle time to any command tMRSC 6 — 6 — 6 — 6 — tCK — tAS/tCS 0.3 — 0.4 — 0.4 — 0.5 — ns — tDS 0.17 — 0.25 — 0.25 — 0.3 — ns — tAH/tCS 0.3 — 0.4 — 0.4 — 0.5 — ns — tDH 0.17 — 0.25 — 0.25 — 0.3 — ns — Output data clock High time tQKH 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCKH — Output data clock Low time tQKL 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCKL — Half–clock period tQHP MIN (tQKH, tQKL) — MIN (tQKH, tQKL) — MIN (tQKH, tQKL) — MIN (tQKH, tQKL) — — — QK edge to clock edge skew tCKQK –0.2 0.2 –0.25 0.25 –0.25 0.25 –0.3 0.3 ns — QK edge to output data edge tQKQ0, tQKQ1 –0.12 0.12 –0.2 0.2 –0.2 0.2 –0.25 0.25 ns 7 tQKQ –0.22 0.22 –0.3 0.3 –0.3 0.3 –0.35 0.35 ns 8 QK edge to QVLD tQKVLD –0.22 0.22 –0.3 0.3 –0.3 0.3 –0.35 0.35 ns — Data Valid Window tDVW tDVW (MIN) — tDVW (MIN) — tDVW (MIN) — tDVW (MIN) — — 9 Setup Times Address/command and input setup time Data–in and data mask to DK set up time Hold Times Address/command and input hold time Data-in and data mask to DK setup time Data and Data Strobe QK edge to any output data edge Rev: 1.03 11/2013 48/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L AC Electrical Characteristics (Continued) –18 –24 –25 –33 Min Max Min Max Min Max Min Max Notes Symbol Units Parameter — 0.24 — 0.24 — 0.24 — 0.24 10 Refresh Average Periodic Refresh Interval tREFI Notes: 1. All timing parameters are measured relative to the crossing point of CK/CK, DK/DK and to the crossing point with VREF of the command, address, and data signals. 2. Outputs measured with equivalent load: VTT 50 Q Test Point 10 pF 3. Tests for AC timing IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operations are tested for the full voltage range specified. 4. AC timing may use a VIL– to–VIH swing of up to 1.5 V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK), and parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 2 V/ns in the rance between VIL(AC) and VIH(AC). 5. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. 6. Frequency drift is not allowed. 7. tQKQ0 is referenced to Q0–Q8. tQKQ1 is referenced to Q9–Q17. 8. tQKQ takes in to account the skew between any QKx and any Q. 9. tDVW (MIN) tQHP – (tQKQx [MAX] + |tQKQx [MIN]|) 10. To improve efficiency, eight AREF commands (one for each bank) can be posted to the LLDRAM II on consecutive cycles at periodic intervals of 1.95 s Rev: 1.03 11/2013 49/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Read Data Valid Window for x18 Device tQHP1 QK0 tQHP1 QK0 B"1" Q_Lower_0 B"0" B"0" Q_Lower_1 B"1" B"1" Q_Lower_2 B"0" B"0" Q_Lower_3 B"1" B"1" Q_Lower_4 B"0" B"0" Q_Lower_5 B"1" B"1" Q_Lower_6 B"0" B"0" Q_Lower_7 B"1" B"1" Q_Lower_8 B"0" tQKQ0(Min) tQKQ0(Min) tQKQ0(Max) Q_Lower tQKQ0(Min) tQKQ0(Max) X"ZZZ" QK1 tDVW3 tDVW3 X"155" X"0AA" tQHP1 tQHP1 X"ZZZ" QK1 Q_Upper_9 B"0" Q_Upper_10 B"1" B"1" Q_Upper_11 B"0" B"0" B"1" B"1" Q_Upper_12 B"0" B"0" Q_Upper_13 Q_Upper_14 B"1" B"1" B"0" B"0" Q_Upper_15 B"1" B"1" Q_Upper_16 B"0" B"0" Q_Upper_17 B"1" tQKQ1(Min) tQKQ1(Min) tQKQ1(Max) Q_Upper X"ZZZ" tQKQ1(Min) tQKQ0(Max) tDVW3 tDVW3 X"0AA" X"155" X"ZZZ" Notes: 1. tQHP is defined as the lesser of tQKH or tQKL. 2. tQKQ0 is referenced to Q0–Q8. 3. Minimum data valid window (tDVW) can be expressed as tQHP – (tQKQx [MAX] + |tQKQx [MIN]|). 4. tQKQ1 is referenced to Q9–Q17. 5. tQKQ takes into account the skew between any QKx and any Q. Rev: 1.03 11/2013 50/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Read Burst Timing tCKH tCKL tCK CK CK tCKQK QKx tQKL tQKH QKx tQKVLD tQKVLD QVLD tQKQmin tQKQmax Q Q0 tDVW Q1 Q2 Q3 IEEE 1149.1 Serial Boundary Scan (JTAG) LLDRAM II includes an IEEE 1149.1 (JTAG) serial boundary scan Test Access Port (TAP). JTAG ports are generally used to verify the connectivity of the device once it has been mounted on a Printed Circuit Board (PCB). The port operates in accordance with IEEE Standard 1149.1-2001 (JTAG). Because the ZQ pin is actually an analog output, to ensure proper boundary-scan testing of the ZQ pin, Mode Register Bit 8 (M8) needs to be set to 0 until the JTAG testing of the pin is complete. Note that upon power up, the default state of Mode Register Bit 8 (M8) is Low. Whenever the JTAG port is used prior to the initialization of the LLDRAM II device, such as when initial conectivity testing is conducted, it is critical that the CK and CK pins meet VID(DC) or that CS be held High from power-up until testing begins. Failure to do so can result in inadvertent MRS commands being loaded and causing unexpected test results. Alternately a partial initialization can be conducted that consists of simply loading a single MRS command with desired MRS Register settings. JTAG testing may then begin as soon as tMRSC is satisfied. JTAG testing can be conducted after full initilization as well. The input signals of the test access port (TDI, TMS, and TCK) are referenced to the VDD as a supply, while the output driver of the TAP (TDO) is powered by VDDQ. The JTAG test access port incorporates a standardTAP controller from which the Instruction Register, Boundary Scan Register, Bypass Register, and ID Code Register can be selected. Each of these functions of the TAP controller are described below. Disabling the JTAG Feature Use of the JTAG port is never required for RAM operation. To disable the TAP controller, TCK must be tied Low (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected or they can be connected to VDD directly or through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state, which will not interfere with the operation of the device. Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. All of the states in the TAP Controller State Diagram are entered through the serial input of the TMS pin. A “0” in the diagram represents a Low on the TMS pin during the rising edge of TCK while a “1” represents a High on TMS. Rev: 1.03 11/2013 51/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Test Data-In (TDI) The TDI ball is used to serially input test instructions and data into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see the TAP Controller State Diagram. TDI is connected to the Most Significant Bit (MSB) of any register (see the TAP Controller Block Diagram). Test Data-Out (TDO) The TDO output ball is used to serially clock test instructions and data out from the registers. The TDO output driver is only active during the Shift-IR and Shift-DR TAP controller states. In all other states, the TDO pin is in a High-Z state. The output changes on the falling edge of TCK. TDO is connected to the Least Significant Bit (LSB) of any register (see the TAP Controller Block Diagram). TAP Controller The TAP controller is a finite state machine that uses the state of the TMS pin at the rising edge of TCK to navigate through its various modes of operation. See the TAP Controller State Diagram. Each state is described in detail below. Test-Logic-Reset The test-logic-reset controller state is entered when TMS is held High for at least five consecutive rising edges of TCK. As long as TMS remains High, the TAP controller will remain in the test-logic-reset state. The test logic is inactive during this state. Run-Test/Idle The run-test/idle is a controller state in between scan operations. This state can be maintained by holding TMS Low. From here either the data register scan, or subsequently, the instruction register scan can be selected. Select-DR-Scan Select-DR-scan is a temporary controller state. All test data registers retain their previous state while here. Capture-DR The Capture-DR state is where the data is parallel-loaded into the test data registers. If the Boundary Scan Register is the currently selected register, then the data currently on the pins is latched into the test data registers. Shift-DR Data is shifted serially through the data register while in this state. As new data is input through the TDI pin, data is shifted out of the TDO pin. Exit1-DR, Pause-DR, and Exit2-DR The purpose of Exit1-DR is used to provide a path to return back to the run-test/idle state (through the Update-DR state). The Pause-DR state is entered when the shifting of data through the test registers needs to be suspended. When shifting is to reconvene, the controller enters the Exit2-DR state and then can re-enter the Shift-DR state. Update-DR When the EXTEST instruction is selected, there are latched parallel outputs of the boundary scan shift register that only change state during the Update-DR controller state. Instruction Register States The instruction register states of the TAP controller are similar to the data register states. The desired instruction is serially shifted into the instruction register during the Shift-IR state and is loaded during the Update-IR state. Rev: 1.03 11/2013 52/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Loading Instruction Code and Shifting Out Data T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 8-bit Instruction Code TCK TMS TDI TAP State Logic-Reset Idle Select-DR Select-IR Capture-IR Shift-IR Shift-IR Exit 1-IR Pause-IR Pause-IR T18 T19 TDO Loading Instruction Code and Shifting Out Data (Continued) T10 T11 T12 T13 T14 T15 T16 T17 n-bit Register between TDI and TDO TCK TMS TDI TAP State Exit 2-IR Update-IR Select-DR Capture-DR Shift-DR Shift-DR Shift-DR Exit 1-DR Update-DR Idle TDO Rev: 1.03 11/2013 53/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L JTAG Tap Controller State Diagram 1 0 Test Logic Reset 0 Run Test Idle 1 Select DR-scan 1 Select IR-scan 0 0 1 1 Capture-DR Capture-IR 0 0 Shift-IR Shift-DR 0 1 Exit1-DR 1 Exit1-IR Pause-IR 0 1 Exit2-DR 0 1 0 Exit2-IR 1 1 Update-DR Rev: 1.03 11/2013 1 0 Pause-DR 1 0 1 0 0 1 0 Update-IR 1 54/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. 0 © 2011, GSI Technology GS4576S09/18L TAP Controller Block Diagram Bypass Regsiter 7 TDI Selection circuitry 6 5 4 3 2 1 0 0 Instruction Regsiter 31 30 29 . . . 2 1 0 1 0 Selection circuitry TDO Identification Regsiter x1 . . . . . 2 Boundary Scan Regsiter TCK TAP Controller TMS Note: x= 112 for all configurations Performing a TAP RESET A reset is performed by forcing TMS High (VDDQ) for five rising edges of TCK. This RESET does not affect the operation of the LLDRAM II and may be performed while the LLDRAM II is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. TAP Registers Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the LLDRAM II test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Instruction Register Eight-bit instructions can be serially loaded into the instruction register. This register is loaded during the Update-IR state of the TAP controller. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the Capture-IR state, the two LSBs are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the LLDRAM II with minimal delay. The bypass register is set Low (VSS) when the BYPASS instruction is executed. Rev: 1.03 11/2013 55/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Boundary Scan Register The Boundary Scan Register is connected to all the input and bidirectional balls on the LLDRAM II. Several bits are also included in the scan register for reserved balls. The LLDRAM II has a 113-bit register. The Boundary Scan Register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The Boundary Scan Register table shows the order in which the bits are connected. Each bit corresponds to one of the balls on the LLDRAM II package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the LLDRAM II and can be shifted out when the TAP controller is in the shift-DR state. The ID register has a vendor code and other information described in the table below. Identification Register Definitions Instruction Field Revision number (31:28) Device ID (27:12) GSI JEDEC ID code (11:1) ID register presence indicator (0) Bit Size Bit Size abcd ab = die revision cd = 00 for x9, 01 for x18 00jkidef10100111 def = 000 for 288Mb, 001 for 576Mb i = 0 for common I/O, 1 for separate I/O jk = 01 for LLDRAM II 01011011001 Allows unique identification of LLDRAM II vendor 1 Indicates the presence of an ID register TAP Instruction Set Overview Many different instructions (256) are possible with the 8-bit instruction register. All combinations used are listed in the Instruction Codes table. These six instructions are described in detail below. The remaining instructions are reserved and should not be used. The TAP controller used in this LLDRAM II is fully compliant to the 1149.1 convention. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. EXTEST The EXTEST instruction allows circuitry external to the component package to be tested. Boundary Scan Register cells at output balls are used to apply a test vector, while those at input balls capture test results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the Boundary Scan Register using the PRELOAD instruction. Thus, during the Update-IR state of EXTEST, the output driver is turned on, and the PRELOAD data is driven onto the output balls. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. Rev: 1.03 11/2013 56/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L High-Z The High-Z instruction places all LLDRAM II outputs into a High-Z state, and causes the bypass register to be connected between TDI and TDO when the TAP Controller is in the Shift DR state. CLAMP When the CLAMP instruction is loaded into the instruction register, the data driven by the output balls are determined from the values held in the Boundary Scan Register. Additionally, it causes the bypass register to be connected between TDI and TDO when the TAP Controller is in the Shift DR state. SAMPLE/PRELOAD When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the Boundary Scan Register. The user must be aware that the TAP controller clock can only operate at a frequency up to 50 MHz, while the LLDRAM II clock operates significantly faster. Because there is a large difference between the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To ensure that the Boundary Scan Register will capture the correct value of a signal, the LLDRAM II signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS + tCH). The LLDRAM II clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the Boundary Scan Register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the Boundary Scan Register between the TDI and TDO balls. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between TDI and TDO. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved for Future Use The remaining instructions are not implemented but are reserved for future use. Do not use these instructions. TAP Timing T0 T1 T2 T3 T4 T5 tTLTH tTHTL tTHTH Test Clock (TCK) tTHMX tMVTH Test Mode Select (TMS) tTHDX tDVTH Test Data-In (TDI) tTLOX tTLOV Test Data-Out (TDO) Rev: 1.03 11/2013 57/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L TAP Input AC Logic Levels Description Symbol Min Max Units Input High (logic 1) Voltage VIH VREF + 0.3 — V Input Low (logic 0) Voltage VIL — VREF – 0.3 V TAP AC Electrical Characteristics Description Symbol Min Max Units Clock Clock Cycle Time tTHTH 20 — ns Clock Frequency tTF — 50 MHz Clock High Time tTHTL 10 — ns Clock Low Time tTLTH 10 — ns TDI/TDO Times TCK Low to TDO Unknown tTLOX 0 — ns TCK Low to TDO Valid tTLOV — 10 ns TDI Valid to TCK High tDVTH 5 — ns TCK High to TDI Invalid tTHDX 5 — ns Setup Times TMS Setup tMVTH 5 — ns Capture Setup tCS 5 — ns Hold Times TMS Setup tTHMX 5 — ns Capture Setup tCH 5 — ns Note: tCS and tCH refer to the set up and hold time requirements of latching data from the Boundary Scan Register. Rev: 1.03 11/2013 58/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L TAP DC Electrical Characteristics and Operating Conditions Description Condition Symbol Min Max Units Notes Input High (logic 1) Voltage — VIH VREF + 0.15 VDD + 0.3 V 1, 2 Input High (logic 0) Voltage — VIL VSS – 0.3 VREF – 0.15 V 1, 2 Input Leakage Current Output disabled, 0 VVIN VDDQ ILI –5.0 5.0 — Output Leakage Current 0 VVIN VDD ILO –5.0 5.0 — Output Low Voltage IOLC = 100 VOL1 — 0.2 V 1 Output Low Voltage IOLT = 2mA VOL2 — 0.4 V 1 Output High Voltage IOHC = 100 VOH1 VDDQ – 0.2 — V 1 Output High Voltage IOHT= 2mA VOH2 VDDQ – 0.4 — V 1 Notes: 1. All voltages referenced to VSS (GND). 2. Overshoot = VIH(AC) VDD + 0.7 V for t tTHTH/2; undershoot = VIL(AC)– 0.5 V for t tTHTH/2; during normal operation, VDDQ must not exceed VDD. Scan Register Sizes Register Name Bit Size Instruction 8 Bypass 1 ID 32 Boundary Scan 113 JTAG TAP Instruction Codes Instruction Code EXTEST 0000 0000 Captures I/O ring contents; Places the Boundary Scan Register between TDI and TDO. Data driven by output balls are determined from values held in the Boundary Scan Register. IDCODE 0010 0001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect LLDRAM II operations. SAMPLE/PRELOAD 0000 0101 Captures I/O ring contents. Places the Boundary Scan Register between TDI and TDO. This operation does not affect LLDRAM II operations. CLAMP 0000 0111 Selects the bypass register to be connected between TDI and TDO. Data driven by output balls are determined from values held in the Boundary Scan Register. HIGH-Z 0000 0011 Selects the bypass register to be connected between TDI and TDO. All outputs are forced into High-Z. BYPASS 1111 1111 Places Bypass Register between TDI and TDO.This operation does not affect LLDRAM II operations. Rev: 1.03 11/2013 Description 59/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Boundary Scan Exit Order Bit # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 Ball K1 K2 L2 L1 M1 M3 M2 N1 P1 N3 N3 N2 N2 P3 P3 P2 P2 R2 R3 T2 T2 T3 T3 U2 U2 U3 U3 V2 U10 U10 U11 U11 T10 T10 T11 T11 R10 R10 Bit # 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 Ball R11 R11 P11 P11 P10 P10 N11 N11 N10 N10 P12 N12 M11 M10 M12 L12 L11 K11 K12 J12 J11 H11 H12 G12 G10 G11 E12 F12 F10 F10 F11 F11 E10 E10 E11 E11 D11 D10 Bit # 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 — Ball C11 C11 C10 C10 B11 B11 B10 B10 B3 B3 B2 B2 C3 C3 C2 C2 D3 D3 D2 D2 E2 E2 E3 E3 F2 F2 F3 F3 E1 F1 G2 G3 G1 H1 H2 J2 J1 — Boundary Scan (BSDL Files) For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications Engineering Department at: [email protected]. Rev: 1.03 11/2013 60/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Package Dimensions—144-Bump BGA (Package L) A1 1 2 3 4 5 6 7 8 9 10 11 12 10.60 CTR. 0.73±0.1 10° TYP. SEATING PLANE 0.012 A A A B C D E F G H J K L M N P R T U V 8.80 Ø0.51 (144x) A1 0.80 TYP. 0.49±0.05 12 11 10 9 8 7 6 5 4 3 2 1 1.0 TYP. 17.00 CTR 18.50±0.10 A B C D E F G H J K L M N P R T U V 18.1 CTR 1.20 MAX 0.8 TYP 0.34 MIN 8.8 CTR 11.00±0.10 Rev: 1.03 11/2013 Note: All dimensions in millimeters. 61/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Ordering Information for GSI LLDRAM IIs Org Part Number1 Type Package Speed (tCK/tRC) T2 64M x 9 GS4576S09L-18 SIO LLDRAM II 144-ball BGA 533/15 C 64M x 9 GS4576S09L-24 SIO LLDRAM II 144-ball BGA 400/15 C 64M x 9 GS4576S09L-25 SIO LLDRAM II 144-ball BGA 400/20 C 64M x 9 GS4576S09L-33 SIO LLDRAM II 144-ball BGA 300/20 C 32M x 18 GS4576S18L-18 SIO LLDRAM II 144-ball BGA 533/15 C 32M x 18 GS4576S18L-24 SIO LLDRAM II 144-ball BGA 400/15 C 32M x 18 GS4576S18L-25 SIO LLDRAM II 144-ball BGA 400/20 C 32M x 18 GS4576S18L-33 SIO LLDRAM II 144-ball BGA 300/20 C 64M x 9 GS4576S09GL-18 SIO LLDRAM II RoHS-compliant 144-ball BGA 533/15 C 64M x 9 GS4576S09GL-24 SIO LLDRAM II RoHS-compliant 144-ball BGA 400/15 C 64M x 9 GS4576S09GL-25 SIO LLDRAM II RoHS-compliant 144-ball BGA 400/20 C 64M x 9 GS4576S09GL-33 SIO LLDRAM II RoHS-compliant 144-ball BGA 300/20 C 32M x 18 GS4576S18GL-18 SIO LLDRAM II RoHS-compliant 144-ball BGA 533/15 C 32M x 18 GS4576S18GL-24 SIO LLDRAM II RoHS-compliant 144-ball BGA 400/15 C 32M x 18 GS4576S18GL-25 SIO LLDRAM II RoHS-compliant 144-ball BGA 400/20 C 32M x 18 GS4576S18GL-33 SIO LLDRAM II RoHS-compliant 144-ball BGA 300/20 C 64M x 9 GS4576S09L-18I SIO LLDRAM II 144-ball BGA 533/15 I 64M x 9 GS4576S09L-24I SIO LLDRAM II 144-ball BGA 400/15 I 64M x 9 GS4576S09L-25I SIO LLDRAM II 144-ball BGA 400/20 I 64M x 9 GS4576S09L-33I SIO LLDRAM II 144-ball BGA 300/20 I 32M x 18 GS4576S18L-18I SIO LLDRAM II 144-ball BGA 533/15 I 32M x 18 GS4576S18L-24I SIO LLDRAM II 144-ball BGA 400/15 I 32M x 18 GS4576S18L-25I SIO LLDRAM II 144-ball BGA 400/20 I 32M x 18 GS4576S18L-33I SIO LLDRAM II 144-ball BGA 300/20 I 64M x 9 GS4576S09GL-18I SIO LLDRAM II RoHS-compliant 144-ball BGA 533/15 I 64M x 9 GS4576S09GL-24I SIO LLDRAM II RoHS-compliant 144-ball BGA 400/15 I 64M x 9 GS4576S09GL-25I SIO LLDRAM II RoHS-compliant 144-ball BGA 400/20 I Note: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS4576S09-533T. 2. C = Commercial Temperature Range. I = Industrial Temperature Range. Rev: 1.03 11/2013 62/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology GS4576S09/18L Ordering Information for GSI LLDRAM IIs (Continued) Org Part Number1 Type Package Speed (tCK/tRC) T2 64M x 9 GS4576S09GL-33I SIO LLDRAM II RoHS-compliant 144-ball BGA 300/20 I 32M x 18 GS4576S18GL-18I SIO LLDRAM II RoHS-compliant 144-ball BGA 533/15 I 32M x 18 GS4576S18GL-24 SIO LLDRAM II RoHS-compliant 144-ball BGA 400/15 I 32M x 18 GS4576S18GL-25I SIO LLDRAM II RoHS-compliant 144-ball BGA 400/20 I 32M x 18 GS4576S18GL-33I SIO LLDRAM II RoHS-compliant 144-ball BGA 300/20 I Note: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS4576S09-533T. 2. C = Commercial Temperature Range. I = Industrial Temperature Range. 576Mb LLDRAM II Datasheet Revision History DS/DateRev. Code: Old; New 4576Sxx_r1 Types of Changes Format or Content Page;Revisions;Reason • Creation of new datasheet 4576Sxx_r1.01 • Various changes to prepare for public release • (Rev.101b: Corrected mechanical drawing) • (Rev1.01c: Editorial updates) • (Rev1.01d: Updated NOP commands from 3000 to 2048) • (Rev1.01e: Added Termal Impedance numbers for 4-layer substrate) • (Rev1.01f: Changed all VSSQ references to VSS) 4576Sxx_r1.02 • Changed DLL Reset to 1024 cycles (page 9) • Corrected typos/wording errors in TAP section • (Rev1.02a: Changed NOP time from 2048 and 1024) 4576Sxx_r1.03 • Updated to reflect MP status Rev: 1.03 11/2013 63/63 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. © 2011, GSI Technology