D3N50 pdf

AOD3N50/AOU3N50
500V, 3A N-Channel MOSFET
General Description
Product Summary
The AOD3N50 & AOU3N50 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
TO252
DPAK
Top View
VDS
600V@150℃
ID (at VGS=10V)
2.8A
RDS(ON) (at VGS=10V)
< 3Ω
100% UIS Tested!
100% Rg Tested!
TO251
D
Bottom View
Top View
Bottom View
D
D
G
G
S
S
S
D
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentB
Pulsed Drain Current
TC=100°C
C
S
G
D
Maximum
500
Units
V
±30
V
2.8
ID
1.8
A
9
IDM
Avalanche Current C
IAR
2
A
Repetitive avalanche energy C
EAR
60
mJ
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
EAS
120
50
5
57
mJ
V/ns
0.45
-50 to 150
W/ oC
°C
300
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Rev.7.0: March 2014
dv/dt
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
W
Typical
45
Maximum
55
Units
°C/W
1.8
0.5
2.2
°C/W
°C/W
RθJC
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Page 1 of 6
AOD3N50/AOU3N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
500
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
600
ID=250µA, VGS=0V
VDS=500V, VGS=0V
0.54
V
V/ oC
1
VDS=400V, TJ=125°C
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
10
±100
3.5
µA
4.1
4.5
nΑ
V
3
Ω
1
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
2.3
gFS
Forward Transconductance
VDS=40V, ID=1.5A
2.8
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.78
IS
Maximum Body-Diode Continuous Current
3
A
ISM
Maximum Body-Diode Pulsed Current
9
A
pF
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=400V, ID=3A
S
221
276
331
25
31.4
38
pF
2.1
2.6
4.1
pF
1.9
3.9
5.9
Ω
6.7
8.0
nC
Qgs
Gate Source Charge
1.7
3.0
nC
Qgd
Gate Drain Charge
2.7
3.2
nC
tD(on)
Turn-On DelayTime
11
13.2
ns
tr
Turn-On Rise Time
19
23.0
ns
tD(off)
Turn-Off DelayTime
20.5
24.6
ns
tf
trr
Turn-Off Fall Time
15
18.0
ns
Body Diode Reverse Recovery Time
IF=3A,dI/dt=100A/µs,VDS=100V
134
161
Qrr
Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
0.89
1.1
ns
µC
VGS=10V, VDS=250V, ID=3A,
RG=25Ω
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2A, VDD=150V, RG=10Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.7.0: March 2014
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Page 2 of 6
AOD3N50/AOU3N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
10
10V
6.5V
ID(A)
4
ID (A)
-55°C
VDS=40V
5
3
125°C
1
6V
2
25°C
1
VGS=5.5V
0
0.1
0
5
10
15
20
25
30
2
VDS (Volts)
Fig 1: On-Region Characteristics
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
3
4.0
Normalized On-Resistance
5.0
RDS(ON) (Ω
Ω)
4
VGS=10V
3.0
2.0
1.0
2.5
VGS=10V
ID=1.5A
2
1.5
1
0.5
0
0
1
2
3
4
5
6
-100
7
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
ID=30A
40
125°C
1.0E+00
1
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
125°
25°C
1.0E-01
1.0E-02
0.9
25°
1.0E-03
0.8
1.0E-04
-100
-50
50
100
150
200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
Rev.7.0: March 2014
0
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0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD3N50/AOU3N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
15
Capacitance (pF)
VGS (Volts)
Ciss
VDS=400V
ID=3A
12
9
6
100
Coss
10
Crss
3
1
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
10
10
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
800
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1s
0.1
600
Power (W)
ID (Amps)
1
TJ(Max)=150°C
TA=25°C
400
DC
200
TJ(Max)=150°C
TC=25°C
0
0.01
1
10
100
1000
0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=2.2°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.7.0: March 2014
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Page 4 of 6
AOD3N50/AOU3N50
60
3.0
50
2.5
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
2.0
1.5
1.0
0.5
0
0.0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
0
25
50
75
100
125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
TJ(Max)=150°C
TA=25°C
Power (W)
300
200
100
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Case (Note G)
100
1000
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Rev.7.0: March 2014
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Page 5 of 6
AOD3N50/AOU3N50
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.7.0: March 2014
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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