AOT5B60D

AOT5B60D
600V, 5A Alpha IGBT TM with Diode
General Description
Product Summary
The Alpha IGBTTM line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The copackaged soft diode is optimized to minimize losses in
motor control applications.
VCE
IC (TC=100°C)
600V
5A
VCE(sat) (TC=25°C)
1.55V
100% Eon/Eoff Tested
100% Qrr Tested
100% Short Circuit Current Tested*
Top View
C
TO-220
G
C
E
G
E
AOT5B60D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
Gate-Emitter Voltage
V GE
AOT5B60D
600
Units
V
±20
V
Continuous Collector TC=25°C
TC=100°C
CurrentA
Pulsed Collector Current, Limited by TJmax
I CM
20
A
Turn off SOA, VCE ≤ 600V, Limited by TJmax
I LM
20
A
Continuous Diode
Forward Current
TC=25°C
TC=100°C
23
IC
18
10
IF
5
A
A
Diode Pulsed Current, Limited by TJmax
I FM
20
A
Short circuit withstanding time VGE = 15V, VCE
≤ 400V, Delay between short circuits ≥ 1.0s,
TC=25°C
t SC
10
µs
TC=25°C
Power Dissipation
TC=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
PD
T J , T STG
TL
Symbol
R θ JA
R θ JC
R θ JC
82.4
41.2
W
-55 to 175
°C
300
°C
AOT5B60D
65
1.82
Units
°C/W
°C/W
3
°C/W
* VCE equal to 50V
Note A:IC limited by package limitation
Rev.4.0: Jan 2014
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Page 1 of 9
AOT5B60D
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
Conditions
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
V CE(sat)
VF
V GE(th)
I CES
Min
IC=1mA, VGE=0V, TJ=25°C
VGE=15V, IC=5A
Collector-Emitter Saturation Voltage
VGE=0V, IC=5A
Diode Forward Voltage
VCE=600V, VGE=0V
Zero Gate Voltage Collector Current
Max
Units
V
600
-
-
TJ=25°C
-
1.55
1.8
TJ=125°C
-
1.78
-
TJ=175°C
-
1.91
-
TJ=25°C
-
1.46
1.75
TJ=125°C
-
1.36
-
TJ=175°C
-
1.25
-
-
6
-
TJ=25°C
-
-
10
TJ=125°C
-
-
100
TJ=175°C
-
-
1000
VCE=VGE, IC=1mA
Gate-Emitter Threshold Voltage
Typ
V
V
V
µA
I GES
Gate-Emitter Leakage Current
VCE=0V, VGE=±20V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=5A
-
2.3
-
S
-
367
-
pF
-
34
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCE=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
1.47
-
pF
Qg
Total Gate Charge
-
9.4
-
nC
Q ge
Gate to Emitter Charge
VGE=15V, VCE=480V, IC=5A
-
3.15
-
nC
Gate to Collector Charge
Short circuit collector current, Max.
1000 short circuits, Delay between
VGE=15V, VCE=400V, RG=60Ω
I C(SC)
short circuits ≥ 1.0s
VGE=0V, VCE=0V, f=1MHz
Rg
Gate Resistance
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
-
3.6
-
nC
-
21
-
A
-
3
-
Ω
t D(on)
Turn-On DelayTime
-
12
-
ns
tr
Turn-On Rise Time
-
15
-
ns
t D(off)
Turn-Off Delay Time
-
83
-
ns
tf
Turn-Off Fall Time
-
12
-
ns
Q gc
TJ=25°C
VGE=15V, VCE=400V, IC=5A,
RG=60Ω,
Parasitic Ιnductance=100nH
E on
Turn-On Energy
-
0.14
-
mJ
E off
Turn-Off Energy
-
0.04
-
mJ
E total
t rr
Total Switching Energy
-
0.18
-
mJ
Diode Reverse Recovery Time
-
98
-
Q rr
Diode Reverse Recovery Charge
-
0.23
-
ns
µC
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, TJ=175°C)
-
4.4
-
A
t D(on)
Turn-On DelayTime
-
10
-
ns
tr
Turn-On Rise Time
-
16
-
ns
t D(off)
Turn-Off Delay Time
-
113
-
ns
tf
Turn-Off Fall Time
-
14
-
ns
E on
Turn-On Energy
-
0.19
-
mJ
E off
Turn-Off Energy
-
0.09
-
mJ
E total
t rr
Total Switching Energy
-
0.28
-
mJ
Diode Reverse Recovery Time
-
195
-
Q rr
Diode Reverse Recovery Charge
-
0.48
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
5.6
-
A
TJ=25°C
IF=5A,dI/dt=200A/µs,VCE=400V
I rm
TJ=175°C
VGE=15V, VCE=400V, IC=5A,
RG=60Ω,
Parasitic Inductance=100nH
TJ=175°C
IF=5A,dI/dt=200A/µs,VCE=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: Jan 2014
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Page 2 of 9
AOT5B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
30
20V
20V
30
25
17V
17V
20
20
15V
15
13V
IC (A)
IC (A)
25
15V
15
13V
10
10
11V
11V
5
VGE= 7V
5
9V
0
VGE=7V
0
0
1
2
3
4
5
6
7
0
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
1
2
3
4
5
6
7
VCE(V)
Fig 2: Output Characteristic
(Tj=175°C )
40
20
VCE=20V
-40°C
15
35
-40°C
30
25°C
175°C
175°C
25
IF (A)
IC (A)
9V
10
20
25°C
15
5
10
5
0
0
7
10
13
0.0
16
VGE(V)
Fig 3: Transfer Characteristic
VCE(sat) (V)
Time (µ
µS)
IC=10A
IC=5A
2
1
1.0
1.5
2.0
2.5
3.0
VF (V)
Fig 4: Diode Characteristic
4
3
0.5
60
30
50
25
40
20
30
15
20
10
10
5
Current(A)
4
IC=2.5A
0
0
0
0
25
50
75
100
125
150
175
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.4.0: Jan 2014
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5
8
11
14
17
20
VGE (V)
Fig 6: VGE vs. Short Circuit Time
(VCE=400V,TC=25°C )
Page 3 of 9
AOT5B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1000
Cies
VCE=480V
IC=5A
12
Coes
Capacitance (pF)
VGE (V)
100
9
6
3
10
Cres
0
1
0
2
4
6
8
10
0
5
Qg(nC)
Fig 7: Gate-Charge Characteristics
10
15
20
25
30
35
40
VCE(V)
Fig 8: Capacitance Characteristic
Ic (A)
100
10
1
100
10
80
8
Current rating IC(A)
Power Disspation (W)
10
60
40
20
0
100
VCE (V)
Fig 10: Reverse Bias SOA
(Tj=175°C,VGE=15V)
1,000
6
4
2
0
25
50
75
100
125
150
175
TCASE(°C)
Fig 11: Power Disspation as a Function of Case
Rev.4.0: Jan 2014
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25
50
75
100
125
150
175
TCASE(°C)
Fig 12: Current De-rating
Page 4 of 9
AOT5B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10,000
Td(off)
Tf
Td(on)
Tr
100
10
Td(on)
1,000
Tr
100
10
1
1
0
3
6
9
12
IC (A)
Figure 13: Switching Time vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=60Ω
Ω)
0
1000
100
200
300
400
500
Rg (Ω
Ω)
Figure 14: Switching Time vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=5A)
600
10
Td(off)
Tf
Td(on)
Tr
8
100
VGE(TH)(V)
Switching Time (nS)
Td(off)
Tf
Switching Time (nS)
Switching Time (nS)
1000
6
4
10
2
0
1
0
100
150
TJ (°C)
Figure 15: Switching Time vs.Tj
( VGE=15V,VCE=400V,IC=5A,Rg=60Ω
Ω)
Rev.4.0: Jan 2014
50
200
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0
30
60
90
120
TJ (°C)
Figure 16: VGE(TH) vs. Tj
150
Page 5 of 9
AOT5B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.7
0.6
Eoff
Eoff
Eon
Etotal
0.5
Eon
0.5
Switching Energy (mJ)
E,SwitchIng Energy (mJ)
0.6
0.4
0.3
0.2
Etotal
0.4
0.3
0.2
0.1
0.1
0
0.0
0
3
6
9
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=175°C,VGE=15V,VCE=400V,Rg=60Ω
Ω)
12
0
0.4
100
300
400
500
Rg (Ω
Ω)
Figure 18: Switching Loss vs. Rg
(Tj=175°C,VGE=15V,VCE=400V,IC=5A)
600
0.4
Eoff
Eoff
Eon
Eon
0.3
Etotal
Switching Energ y (mJ)
Switching Energy (mJ)
200
0.2
0.1
0
0.3
Etotal
0.2
0.1
0.0
0
25
75
100
125
150
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=5A,Rg=60Ω
Ω)
Rev.4.0: Jan 2014
50
175
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200
250
300
350
400
450
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=175°C,VGE=15V,IC=5A,Rg=60Ω
Ω)
500
Page 6 of 9
AOT5B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-03
2.2
15A
1.E-04
10A
1.7
1.E-05
VSD (V)
5A
IF=1A
1.E-06
VCE=400V
0.7
1.E-07
1.E-08
0.2
0
25
50
75
100
125
150
175
200
0
50
75
100 125 150 175
Temperature (°C )
Fig 22: Diode Forward voltage vs. Junction
Temperature
Temperature (°C )
Fig 21: Diode Reverse Leakage Current vs.
Junction Temperature
800
40
700
35
175°C
600
250
20
300
15
25°C
175°C
150
175°C
100
6
S
3
5
25°C
0
0
0
0
3
6
9
12
0
IF(A)
Fig 23: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µs)
600
12
9
25°C
50
25°C
0
Trr
10
Irm
100
Trr (nS)
400
15
175°C
200
25
Qrr
200
18
30
500
200
25
300
Irm(A)
Qrr (nC)
13V
1.2
S
ICE(S) (A)
VCE=600V
60
3
6
9
12
IS (A)
Fig 24: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µ
µs)
200
20
160
16
175°C
500
50
300
30
Trr (nS)
40
Qrr
Irm(A)
Qrr (nC)
400
120
80
20
25°C
175°C
Irm
100
10
100
200
40
0
S
4
0
0
400 500 600 700 800 900
di/dt (A/µ
µS)
Fig 25: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
(VGE=15V,VCE=400V,IF=5A)
Rev.4.0: Jan 2014
8
25°C
25°C
0
25°C
175°C
Trr
S
200
12
175°C
300
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100
200
300
400
500 600 700 800 900
di/dt (A/µ
µS)
Fig 26: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=5A)
Page 7 of 9
AOT5B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.82°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 27: Normalized Maximum Transient Thermal Impedance for IGBT
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 28: Normalized Maximum Transient Thermal Impedance for Diode
Rev.4.0: Jan 2014
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Page 8 of 9
AOT5B60D
Rev.4.0: Jan 2014
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Page 9 of 9