AOTF15B65M1

AOTF15B65M1
650V, 15A Alpha IGBT TM
With soft and fast recovery anti-parallel diode
General Description
Product Summary
• Latest AlphaIGBT (α IGBT) technology
• 650V breakdown voltage
• Very fast and soft recovery freewheeling diode
• High efficient turn-on di/dt controllability
• Low VCE(SAT) enables high efficiencies
• Low turn-off switching loss and softness
• Very good EMI behavior
• High short-circuit ruggedness
VCE
IC (TC=100°C)
650V
15A
VCE(sat) (TJ=25°C)
1.7V
Applications
• Motor Drives
• Sewing Machines
• Home Appliances
• Fan, Pumps, Vacuum Cleaner
• Other Hard Switching Applications
TO-220F
C
G
C
E
G
E
AOTF15B65M1
Orderable Part Number
Package Type
AOTF15B65M1
TO220F
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V CE
Gate-Emitter Voltage
V GE
Form
Minimum Order Quantity
Tube
1000
AOTF15B65M1
650
Units
V
±30
V
302)
Continuous Collector TC=25°C
TC=100°C
Current
Pulsed Collector Current, Limited by TJmax
I CM
45
A
Turn off SOA, VCE ≤ 650V, Limited by TJmax
I LM
45
A
Continuous Diode
Forward Current
TC=25°C
TC=100°C
Diode Pulsed Current, Limited by TJmax
Short circuit withstanding time 1)
VGE = 15V, VCC ≤ 400V, TJ ≤ 150°C
Power Dissipation
TC=25°C
TC=100°C
Junction and Storage Temperature Range
IC
IF
152)
302)
152)
A
I FM
45
A
t SC
5
µs
PD
T J , T STG
36
14
-55 to 150
Maximum lead temperature for soldering
TL
300
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
AOTF15B65M1
Parameter
Symbol
R θ JA
Maximum Junction-to-Ambient
65
Maximum IGBT Junction-to-Case
R θ JC
3.5
Maximum Diode Junction-to-Case
R θ JC
5
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) TO220F IC Follow TO220/TO263.
Rev.1.0: April 2015
A
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W
°C
°C
Units
°C/W
°C/W
°C/W
Page 1 of 9
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
Collector-Emitter Breakdown Voltage
IC=1mA, VGE=0V, TJ=25°C
650
-
-
V
V CE(sat)
VGE=15V, IC=15A
Symbol
VF
Collector-Emitter Saturation Voltage
VGE=0V, IC=15A
Diode Forward Voltage
V GE(th)
Gate-Emitter Threshold Voltage
VCE=5V, IC=1mA
I CES
Zero Gate Voltage Collector Current
VCE=650V, VGE=0V
TJ=25°C
-
1.7
2.15
TJ=125°C
-
2.03
-
TJ=150°C
-
2.12
-
V
TJ=25°C
-
1.77
2.25
TJ=125°C
-
1.82
-
TJ=150°C
-
1.79
-
-
5.1
-
V
V
TJ=25°C
-
-
10
TJ=125°C
-
-
500
TJ=150°C
-
-
1000
µA
I GES
Gate-Emitter leakage current
VCE=0V, VGE=±30V
-
-
±100
nA
g FS
Forward Transconductance
VCE=20V, IC=15A
-
11
-
S
-
923
-
pF
-
96
-
pF
DYNAMIC PARAMETERS
C ies
Input Capacitance
VGE=0V, VCC=25V, f=1MHz
C oes
Output Capacitance
C res
Reverse Transfer Capacitance
-
33
-
pF
Qg
Total Gate Charge
-
32
-
nC
Q ge
Gate to Emitter Charge
-
7.8
-
nC
Q gc
Gate to Collector Charge
-
15
-
nC
I C(SC)
Short circuit collector current
-
90
-
A
VGE=0V, VCC=0V, f=1MHz
Gate resistance
Rg
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
-
6.7
-
Ω
VGE=15V, VCC=520V, IC=15A
VGE=15V, VCC=400V,
tsc≤5us, TJ≤150°C
t D(on)
Turn-On DelayTime
-
15
-
ns
tr
Turn-On Rise Time
-
18
-
ns
t D(off)
Turn-Off Delay Time
-
94
-
ns
tf
Turn-Off Fall Time
-
14
-
ns
E on
Turn-On Energy
-
0.29
-
mJ
E off
Turn-Off Energy
-
0.2
-
mJ
E total
t rr
Total Switching Energy
-
0.49
-
mJ
-
317
-
Q rr
Diode Reverse Recovery Charge
-
0.7
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
SWITCHING PARAMETERS, (Load Inductive, TJ=150°C)
-
4.7
-
A
t D(on)
Turn-On DelayTime
-
14
-
ns
tr
Turn-On Rise Time
-
20
-
ns
t D(off)
Turn-Off Delay Time
-
111
-
ns
tf
Turn-Off Fall Time
-
24
-
ns
E on
Turn-On Energy
-
0.32
-
mJ
E off
Turn-Off Energy
-
0.34
-
mJ
E total
t rr
Total Switching Energy
-
0.66
-
mJ
-
478
-
Q rr
Diode Reverse Recovery Charge
-
1.1
-
ns
µC
I rm
Diode Peak Reverse Recovery Current
-
5.7
-
A
TJ=25°C
VGE=15V, VCC=400V, IC=15A,
RG=20Ω
Diode Reverse Recovery Time
TJ=25°C
IF=15A, dI/dt=200A/µs, VCC=400V
TJ=150°C
VGE=15V, VCC=400V, IC=15A,
RG=20Ω
Diode Reverse Recovery Time
TJ=150°C
IF=15A, dI/dt=200A/µs, VCC=400V
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2015
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Page 2 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
75
60
20V
17V
17V
15V
60
20V
48
15V
45
IC (A)
IC (A)
13V
11V
30
13V
36
11V
24
9V
9V
15
12
VGE= 7V
VGE=7V
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
VCE(V)
Figure 2: Output Characteristic
(Tj=150°C )
VCE(V)
Figure 1: Output Characteristic
(Tj=25°C )
45
45
VCE=20V
36
27
-40°C
27
150°C
25°C
IF (A)
IC (A)
36
18
18
25°C
150°C
9
9
-40°C
0
0
3
6
9
12
15
0
0.5
VGE(V)
Figure 3: Transfer Characteristic
1
1.5
2
2.5
3
VF (V)
Figure 4: Diode Characteristic
5
3
4
2.5
30A
VSD (V)
VCE(sat) (V)
IC=30A
3
IC=15A
2
2
15A
1.5
5A
1
IF=1A
1
IC=7.5A
0.5
0
0
0
25
50
75
100
125
150
Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
Rev.1.0: April 2015
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0
25
50
75
100
125
150
Temperature (°C )
Figure 6: Diode Forward voltage vs. Junction
Temperature
Page 3 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
VCE=520V
IC=15A
Cies
12
Capacitance (pF)
VGE(V)
1000
9
6
3
Coes
100
Cres
10
0
1
0
8
16
24
32
Qg(nC)
Figure 7: Gate-Charge Characteristics
40
0
8
16
24
32
40
VCE(V)
Figure 8: Capacitance Characteristic
50
Power Disspation (W)
40
30
20
10
0
25
50
75
100
125
150
TCASE(°C)
Figure 10: Power Disspation as a Function of Case
20
1E-02
1E-03
1E-04
12
ICE(S) (A)
Current rating IC(A)
16
8
VCE=650V
1E-05
1E-06
VCE=520V
4
1E-07
0
1E-08
25
50
75
100
125
150
Rev.1.0: April 2015
0
25
50
75
100
125
150
Temperature (°C )
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
TCASE(°C)
Figure 11: Current De-rating
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Page 4 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
Td(off)
Tf
Td(on)
Tr
1000
Switching Time (nS)
1000
Switching Time (nS)
10000
Td(off)
Tf
Td(on)
Tr
100
10
1
100
10
1
5
10
15
20
25
0
30
IC (A)
Figure 13: Switching Time vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=20Ω)
10000
120
160
Rg (Ω)
Figure 14: Switching Time vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=15A)
200
6
VGE(TH)(V)
Switching Time (nS)
80
7
Td(off)
Tf
Td(on)
Tr
1000
40
100
5
4
3
10
2
1
1
25
50
75
100
125
150
TJ (°C)
Figure 15: Switching Time vs.Tj
(VGE=15V,VCE=400V,IC=15A,Rg=20Ω)
Rev.1.0: April 2015
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0
25
50
75
100
125
150
TJ (°C)
Figure 16: VGE(TH) vs. Tj
Page 5 of 9
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2.5
2.5
Eoff
Eoff
2
Switching Energy (mJ)
2
SwitchIng Energy (mJ)
Eon
Eon
Etotal
1.5
1
0.5
Etotal
1.5
1
0.5
0
0
5
10
15
20
25
30
0
IC (A)
Figure 17: Switching Loss vs. IC
(Tj=150°C,VGE=15V,VCE=400V,Rg=20Ω)
40
120
160
200
Rg (Ω)
Figure 18: Switching Loss vs. Rg
(Tj=150°C,VGE=15V,VCE=400V,IC=15A)
1
1
Eoff
Eoff
Switching Energ y (mJ)
Eon
0.8
Switching Energy (mJ)
80
Etotal
0.6
0.4
0.2
Eon
0.8
Etotal
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TJ (°C)
Figure 19: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=15A,Rg=20Ω)
Rev.1.0: April 2015
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200
250
300
350
400
450
500
VCE (V)
Figure 20: Switching Loss vs. VCE
(Tj=150°C,VGE=15V,IC=15A,Rg=20Ω)
Page 6 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
1600
40
600
32
480
24
360
40
150°C
32
Trr
25°C
800
240
8
120
0
0
16
8
25°C
25°C
10
15
20
25
30
1500
1200
0
5
IF(A)
Figure 21: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
(VGE=15V,VCE=400V,di/dt=200A/µs)
10
40
600
32
480
Trr (nS)
Irm(A)
Qrr (nC)
25°C
600
30
150°C
360
24
25°C
16
240
8
120
0
0
16
150°C
8
Irm
0
25°C
200
300
400
500
600
di/dt (A/µS)
Figure 23: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
(VGE=15V,VCE=400V,IF=15A)
Rev.1.0: April 2015
25
32
150°C
300
100
20
40
Trr
24
Qrr
25°C
15
IF (A)
Figure 22: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
(VGE=15V,VCE=400V,di/dt=200A/µs)
150°C
900
S
150°C
0
5
24
S
16
Irm
150°C
400
25°C
S
Qrr
Irm(A)
1200
Trr (nS)
Qrr (nC)
150°C
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S
0
100
200
300
400
500
600
di/dt (A/µS)
Figure 24: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
(VGE=15V,VCE=400V,IF=15A)
Page 7 of 9
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
Ton
0.001
T
0.0001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
1E-06
T
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode
Rev.1.0: April 2015
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Page 8 of 9
Figure A: Gate Charge Test Circuit & Waveforms
Figure B: Inductive Switching Test Circuit & Waveforms
Figure C: Diode Recovery Test Circuit & Waveforms
Rev.1.0: April 2015
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Page 9 of 9