To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 11 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC3355 500 pcs (Non reel) • 18 mm wide radial taping 2SC3355-T 2.5 kpcs/box (Box type) • Supplying paper tape with in a box Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 500 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V IC 100 mA Ptot 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Collector Current Total Power Dissipation Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10208EJ01V0DS (1st edition) (Previous No. P10355EJ3V1DS00) Date Published April 2003 CP(K) Printed in Japan The mark • shows major revised points. NEC Compound Semiconductor Devices 1985, 2003 2SC3355 ELECTRICAL CHARACTERISTICS (TA = +25°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA – – 1.0 µA Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 mA – – 1.0 µA VCE = 10 V, IC = 20 mA 50 120 300 – VCE = 10 V, IC = 20 mA – 6.5 – GHz S21e VCE = 10 V, IC = 20 mA, f = 1 GHz – 9.5 – dB Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.65 1.0 pF hFE DC Current Gain Note 1 RF Characteristics Gain Bandwidth Product fT 2 Insertion Power Gain Cob Output Capacitance Note 2 Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank K Marking K hFE Value 50 to 300 Data Sheet PU10208EJ01V0DS 2SC3355 TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 19 mm 1 000 With heat sink 7.8 mm 750 10 mm Heat sink (Aluminum) 3.8 mm Total Power Dissipation Ptot (mW) 1 250 500 Free air 250 0 25 50 75 100 125 Reverse Transfer Capacitance Cre (pF) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 150 1 0.5 0.3 0.2 0.5 1 2 5 10 20 30 Collector to Base Voltage VCB (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 Gain Bandwidth Product fT (GHz) VCE = 10 V 100 50 20 10 0.5 1 5 10 VCE = 10 V 5 2 1 0.5 0.2 0.1 0.1 50 0.5 1 5 10 50 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. FREQUENCY INSERTION POWER GAIN vs. COLLECTOR CURRENT 25 15 Insertion Power Gain |S21e|2 (dB) DC Current Gain hFE f = 1 MHz Ambient Temperature TA (˚C) 200 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 2 MAG 20 |S21e|2 15 10 5 VCE = 10 V IC = 20 mA 0 0.05 0.1 0.2 0.5 1 VCE = 10 V f = 1 GHz 10 2 Frequency f (GHz) 5 0 0.5 1 5 10 50 70 Collector Current IC (mA) Data Sheet PU10208EJ01V0DS 3 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V f = 1 GHz Noise Figure NF (dB) 6 5 4 3 2 1 0 0.5 1 5 10 50 70 3rd Order Intermodulation Distortion IM3 (dB) 2nd Order Intermodulation Distortion IM2 (dB) 2SC3355 IM3, IM2 vs. COLLECTOR CURRENT –100 VCE = 10 V Vo = 100 dBµV/50 Ω Rg = Re = 50 Ω IM2 : f = 90 + 100 MHz IM3 : f = 2 × 200 – 190 MHz –90 –80 IM3 –70 –60 IM2 –50 –40 –30 Collector Current IC (mA) 20 30 40 50 60 70 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ 4 Data Sheet PU10208EJ01V0DS 2SC3355 SMITH CHART S11e, S22e-FREQUENCY 1.4 1.2 0.9 1.6 0.6 0. 18 32 1.8 0. 50 2.0 5 0. T EN 0.4 4 0. 0 3. 30 C 0.6 O 0.8 6.0 0 1. S11e 2.0 GHz 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 4.0 0 1. 1 0.2 9 0.2 ( –Z–+–J–XTANCE CO ) MPO N 0.1 0.3 7 3 0 0.2 0 0.3 0.8 0.2 0.6 10 0.1 0.4 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.2 0.9 1.0 0.7 0.8 0.6 0.5 0.4 50 0 0.3 20 REACTANCE COMPONENT R –––– 0.2 ZO IC = 40 mA 0.2 GHz 0.4 0.2 GHz IC = 20 mA 0 1. 5.0 ) 1.0 0.8 ( 30 0 0.6 E IV AT 3. 0 −4 4 NE G 0. 0.4 5 0. 0. 31 19 2.0 1.8 1.6 1.4 0.35 0.15 −70 1.2 4 0.3 6 0.1 0.36 0.14 −80 1.0 0 0.8 3 0.3 7 0.2 −6 0.9 0.1 0.38 0.39 0.12 0.11 −100 −90 0.37 0.13 0 −11 0.40 0.10 0.4 0.0 2 8 0 −1 2 0.4 1 0.0 9 0. 4 0. 3 07 30 −1 0.6 32 18 0. 0. 0 0.7 −5 0. 0.3 0.2 0 0 E NC TA X AC −J––O– RE –Z S22e 4.0 2.0 GHz 0.26 0.24 8 0. 0.27 0.2 0 .2 8 3 0 0.2 .2 2 9 −20 0.2 1 − 0.6 0.2 −10 10 ) 50 ( 0.25 0.25 0.2 IC = 40 mA 0.2 IC = 20 mA 20 0.3 WAVELE 600 40 NGTH 0 S 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.0W2ARD LOADLECTION COEF FCIENT 0.4 0.0TOR 3 HS TO LE OF REF 6 I 7 N .0 DEG 0NGT ANG 4 0.4 R 0 E E 0.4 ES 6 L 0 .0W4AVE −1 0.0 6 0 5 15 0 0.4 5 0.4 5 0 15 0 − . 5 0 0. 4 0 4 POS T 0.1 14 0.4 6 0. 06 ITIV NEN 40 0 ER 4 PO M 0. −1 E A CO 0.1 6 0.3 4 70 0.2 0.1 0.3 0.15 0.35 19 0. 31 0. 07 0. 3 4 0. 0 13 0.14 0.36 80 90 0.7 8 0.0 2 0.4 20 1 0.13 0.37 0.12 0.38 0.11 0.39 100 0.10 0.40 110 0.8 9 0.0 1 0.4 1.0 CONDITION : VCE = 10 V S21e-FREQUENCY S12e-FREQUENCY CONDITION : VCE = 10 V, IC = 40 mA CONDITION : VCE = 10 V, IC = 40 mA 90˚ 120˚ 90˚ 120˚ 60˚ 0.2 GHz 30˚ 150˚ 60˚ 150˚ S21e 2.0 GHz 2.0 GHz 180˚ 4 8 12 –150˚ 16 20 –60˚ 0.2 GHz 0˚ 180˚ –30˚ –120˚ 30˚ S12e 0.1 0.2 0.3 –150˚ 0.4 0.5 0˚ –30˚ –60˚ –120˚ –90˚ –90˚ Data Sheet PU10208EJ01V0DS 5 2SC3355 PACKAGE DIMENSIONS TO-92 (UNIT: mm) 5.5 MAX. 5.2 MAX. 12.7 MIN. 0.5 2.54 2 3 4.2 MAX. 1 1.77 MAX. 1.27 PIN CONNECTIONS 1. Base 2. Emitter 3. Collector 6 EIAJ : SC-43B JEDEC : TO-92 IEC : PA33 Data Sheet PU10208EJ01V0DS 2SC3355 • The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PU10208EJ01V0DS 7 2SC3355 For further information, please contact NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited FAX: +852-3107-7309 E-mail: [email protected] Hong Kong Head Office TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 Korea Branch Office TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0302-1