RENESAS 2SC5606

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
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“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
FEATURES
• Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
• 3-pin ultra super minimold (19, 1608 PKG) package
<R>
ORDERING INFORMATION
Part Number
Order Number
2SC5606
2SC5606-A
2SC5606-T1
2SC5606-T1-A
Package
Quantity
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
Supplying Form
50 pcs (Non reel)
• 8 mm wide embossed taping
3 kpcs/reel
• Pin 3 (collector) face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
IC
35
mA
Ptot
115
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Collector Current
Total Power Dissipation
Note
2
Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy substrate
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999, 2009
2SC5606
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
–
200
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
–
–
200
nA
VCE = 2 V, IC = 5 mA
60
80
100
–
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
21
–
GHz
⏐S21e⏐
VCE = 2 V, IC = 20 mA, f = 2 GHz
10
12.5
–
dB
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
–
1.2
1.5
dB
Note 1
DC Current Gain
hFE
RF Characteristics
Gain Bandwidth Product
fT
2
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Note 2
Cre
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
0.21
0.3
pF
MAG
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
14
–
dB
MSG
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
15
–
dB
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
S21
(K – √ (K2 – 1) )
S12
4. MSG =
S21
S12
hFE CLASSIFICATION
<R>
2
Rank
FB/YFB
Marking
UA
hFE
60 to 100
Data Sheet PU10781EJ01V0DS
2SC5606
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Total Power Dissipation Ptot (mW)
200
Mounted on Glass Epoxy Board
(1.08 cm2 × 1.0 mm (t) )
150
115
100
50
0
0
25
50
75
100
125
Reverse Transfer Capacitance Cre (pF)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
150
1.0
f = 1 MHz
0.1
0.1
1.0
100.0
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
IB 100 μ A step
VCE = 2 V
650 μ A
40
Collector Current IC (mA)
Collector Current IC (mA)
10.0
Ambient Temperature TA (°C)
50
30
20
10
450 μ A
30
20
250 μ A
10
IB = 50 μ A
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
Base to Emitter Voltage VBE (V)
1
2
3
4
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
VCE = 2 V
DC Current Gain hFE
<R>
100
10
0.1
1.0
10.0
100.0
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10781EJ01V0DS
3
2SC5606
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
25
20
15
10
5
1
10
Insertion Power Gain |S21e|2 (dB)
5
10
25
20
15
10
5
1.0
35
100
VCE = 2 V
IC = 20 mA
30
25
20
15
10
5
0
0.1
10.0
1.0
10.0
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
14
12
10
8
6
4
2
10
100
16
VCE = 2 V
f = 2 GHz
14
12
10
8
6
4
2
0
1
10
Collector Current IC (mA)
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
4
1
INSERTION POWER GAIN
vs. FREQUENCY
16
Insertion Power Gain |S21e|2 (dB)
10
INSERTION POWER GAIN
vs. FREQUENCY
VCE = 1 V
IC = 10 mA
1
15
Collector Current IC (mA)
30
0
20
Collector Current IC (mA)
35
0
0.1
VCE = 2 V
f = 2 GHz
25
0
100
Insertion Power Gain |S21e|2 (dB)
0
30
Gain Bandwidth Product fT (GHz)
VCE = 1 V
f = 2 GHz
Insertion Power Gain |S21e|2 (dB)
Gain Bandwidth Product fT (GHz)
30
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Data Sheet PU10781EJ01V0DS
100
2SC5606
NOISE FIGURE vs.
COLLECTOR CURRENT
3.0
VCE = 2 V
f = 2 GHz
Noise Figure NF (dB)
2.5
2.0
1.5
1.0
0.5
0
1
10
100
Collector Current IC (mA)
Remark The graph indicates nominal characteristics.
<R>
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
Data Sheet PU10781EJ01V0DS
5
2SC5606
PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm)
0.2+0.1
–0
1.6±0.1
0.8±0.1
3
0.15+0.1
–0.05
0 to 0.1
0.6
0.75±0.05
1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
6
0.3+0.1
–0
0.5
0.5
1.0
UA
1.6±0.1
2
Data Sheet PU10781EJ01V0DS
2SC5606
• The information in this document is current as of August, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in
order to avoid risks of the damages to property (including public or social property) or injury (including death) to
persons, as the result of defects of NEC Electronics products.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E