TECHNICAL DATA SL1002 Audio Frequency Power Amplifier SOT-223 Features SL1002 ● Low Speed Switching Emitter Collector Base 1 2 3 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Tc=25°C unless otherwise noted Symbol Parameter Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current (DC) IC *Collector Current (Pulse) ICP Base Current (DC) IB PC Collector Dissipation (TC=25°C) Junction to Ambient Rθja Junction to Case Rθjc Junction Temperature TJ Storage Temperature TSTG * PW≤10ms, Duty Cycle≤50% Value 40 30 5 3 7 0.6 10 132 13.5 150 - 55 ~ 150 Units V V V A A A W °C/W °C/W °C °C Electrical Characteristics Tc=25°C unless otherwise noted Characteristics DC Current Gain (1), (2) DC Current Gain (1), (2) Symbol hFE hFE Unit Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage (1) Icbo Icbo Iebo Iebo μA μA μA μA Vce (sat) V Measurement Mode Vce =2V, Ic =20mA Vce = 2V, Ic = 1A Vcb = 30V, Ie = 0 Vcb = 40V, Ie = 0 Veb = 3V, Ic = 0 Veb = 5V, Ic = 0 Ic = 2A, Ib = 0.2A Ic = 0.8 A, Ib = 0.02 A Base-Emitter Vbe (sat) Ic = 2A, Ib = 0.2A V Saturation Voltage (1) (1) Pulse Test : Pulse Width ≤ 300㎲. Duty Cycle ≤ 2% (2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic Min 30 Max 60 400 1.0 100 1.0 100 0.5 0.1 2.0 * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2011, February, Rev. 01 SL1002 2011, February, Rev. 01 SL1002 2011, February, Rev. 01 SL1002 SOT-223 2011, February, Rev. 01