R MM1Z5221B TH R U MM1Z5268B 0.5W SILICON PLANAR ZENER DIODES S E M I C O N D U C T O R SOD-123 FEATURES (0.55 +0.05 ) -0.05 0.022"+0.002" -0.002" Total power dissipation:max.500 mW Small plastic package suitable for surface mounted design Tolerance approximately ±5% High temperature soldering guaranteed:260℃/10 seconds at terminals (1.60+0.05 ) -0.05 0.063"+0.002" -0.002" (2.65±0.05( JF 0.104"+0.002 - Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC (3.8±0.1) 0.150"±0.004" 5° 0.005"(0.135) MAX (1.10±0.05) 0.043"±0.002" MECHANICAL DATA Case: SOD-123 plastic case Dimensions in inches and (millimeters) Weight: Approx. 0.01 gram ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C) Symbols Value Units 500 mW 150 C Zener current see table "Characteristics" PD TJ TSTG Power dissipation Junction temperature Storage temperature range C -55 to+150 ELECTRICAL CHARACTERISTICS (TA=25 C) Symbols Thermal resistance junction to ambient Thermal resistance junction to Lead Forward voltage at IF=10mA JINAN JINGHENG ELECTRONICS CO., LTD. Min RθJA RθJL VF Typ Max C/W 150 C/W 0.9 10-47 Units 340 V HTTP://WWW.JINGHENGGROUP.COM MM1Z... SILICON PLANAR ZENER DIODES Zener Voltage range Type MM1Z5221B MM1Z5222B MM1Z5223B MM1Z5224B MM1Z5225B MM1Z5226B MM1Z5227B MM1Z5228B MM1Z5229B MM1Z5230B MM1Z5231B MM1Z5232B MM1Z5233B MM1Z5234B MM1Z5235B MM1Z5236B MM1Z5237B MM1Z5238B MM1Z5239B MM1Z5240B MM1Z5241B MM1Z5242B MM1Z5243B MM1Z5245B MM1Z5246B MM1Z5247B MM1Z5248B MM1Z5249B MM1Z5250B MM1Z5251B MM1Z5252B MM1Z5253B MM1Z5254B MM1Z5255B MM1Z5256B MM1Z5257B MM1Z5258B MM1Z5259B MM1Z5260B MM1Z5261B MM1Z5262B MM1Z5263B MM1Z5264B MM1Z5265B MM1Z5266B MM1Z5267B MM1Z5268B 1) 2) Marking Code VZNOM V mA V A4 AB B4 AC C4 D4 E4 F4 H4 J4 K4 M4 AD N4 P4 R4 X4 AE Y4 Z4 A5 B5 C5 D5 E5 AH F5 K9 H5 J5 K5 M9 M5 AJ N5 P5 R5 X5 Y5 Z5 A6 B6 AK C6 D6 E6 F6 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 8.5 7.8 7.4 7 6.6 6.2 5.6 5.2 5 4.6 4.5 4.2 3.8 3.4 3.2 3 2.7 2.5 2.2 2.1 2 1.8 1.7 1.5 2.28…2.52 2.38…2.63 2.57…2.84 2.66…2.94 2.85…3.15 3.14…3.47 3.42…3.78 3.71…4.1 4.09…4.52 4.47…4.94 4.85…5.36 5.32…5.88 5.7…6.3 5.89…6.51 6.46…7.14 7.13…7.88 7.79…8.61 8.27…9.14 8.65…9.56 9.5…10.5 10.45…11.55 11.4…12.6 12.35…13.65 14.25…15.75 15.2…16.8 16.15…17.85 17.1…18.9 18.05…19.95 19…21 20.9…23.1 22.8…25.2 23.75…26.25 25.65…28.35 26.6…29.4 28.5…31.5 31.35…34.65 34.2…37.8 37.05…40.95 40.85…45.15 44.65…49.35 48.45…53.55 53.2…58.8 57…63 58.9…65.1 64.6…71.4 71.25…78.75 77.9…86.1 Dynamic resistance 3) Reverse leakage current rZjt and rZjK at IZK IZT for VZT IR mA 30 30 30 30 29 28 24 23 22 19 17 11 7 7 5 6 8 8 10 17 22 30 13 16 17 19 21 23 25 29 33 35 41 44 49 58 70 80 93 105 125 150 170 185 230 270 330 1,200 1,250 1,300 1,400 1,600 1,600 1,700 1,900 2,000 1,900 1,600 1,600 1,600 1,000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1,000 1,100 1,300 1,400 1,400 1,600 1,700 2,000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 μA 100 100 75 75 50 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1)VZ is tested with pulses tp=20ms. 2)Nominal Zener voltage is measured with device junction in thermal equilibrium at TL=30°C ± 1ºC. 3)ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied.The specified limits are for IZ(AC)=0.1 IZ(DC) with AC frequency = 1 kHZ. JINAN JINGHENG ELECTRONICS CO., LTD. 10-48 HTTP://WWW.JINGHENGGROUP.COM at VR V 1 1 1 1 1 1 1 1 1 2 2 3 3.5 4 5 6 6.5 6.5 7 8 8.4 9.1 9.9 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 62 MM1Z... SILICON PLANAR ZENER DIODES JINAN JINGHENG ELECTRONICS CO., LTD. 10-49 HTTP://WWW.JINGHENGGROUP.COM MM1Z... SILICON PLANAR ZENER DIODES I R , leakage current ( μ A ) C , CAPACITANCE ( pF ) 1000 100 10 1000 100 10 1 +150ºC 0. 1 0 . 01 +25ºC 0 . 001 -55ºC 0 . 0001 1 1 10 100 0 . 00001 0 10 20 30 40 50 60 70 V Z , NOMINAL ZENER VOLTAGE ( V ) Figure 7 . Typical Capacitance Figure 8 . Typical Leakage Current 90 100 100 T A = 25°C I Z , ZENER CURRENT ( mA ) T A = 25°C I Z , ZENER CURRENT ( mA ) 80 V Z , NOMINAL ZENER VOLTAGE ( V ) 10 1 0. 1 10 1 0. 1 0 . 01 0 2 4 6 8 10 12 10 V Z , ZENER VOLTAGE ( V ) Figure 9 . Zener Voltage versus Zener Current ( V Z Up to 12V ) JINAN JINGHENG ELECTRONICS CO., LTD. 0 . 01 30 50 70 V Z , ZENER VOLTAGE ( V ) 90 Figure 10 . Zener Voltage versus Zener Current 10-50 HTTP://WWW.JINGHENGGROUP.COM