1N4728

R
1N4727 THRU 1N4764
1W SILICON PLANAR ZENER DIODES
S E M I C O N D U C T O R
DO-41(GLASS)
FEATURES
Silicon planar power zener diode
1.00(25.4)
MIN.
For use in stabilizing and clipping circuits with high power rating.
Standard Zener voltage tolerance is
Add suffix "A" for
10%.
5% tolerance and suffix"B"for 2%tolerance.
0.107(2.7)
0.080(2.0)
DIA.
JF
Other tolerance is available upon request.
High temperature soldering guaranteed:260℃/10 seconds at terminals
0.205(5.20)
0.161(4.10)
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
1.00(25.4)
MIN.
0.034(0.86)
MAX
DIA.
Case: DO-41 glass case
Weight: Approx. 0.35 gram
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C)
Symbols
Units
Value
Zener current see table "Characteristics"
Ptot
TJ
TSTG
Power dissipation at TA=25 C
Junction temperature
Storage temperature range
W
11)
200
C
C
-65 to+200
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
ELECTRICAL CHARACTERISTICS (TA=25 C)
Symbols
Thermal resistance junction to ambient
Forward voltage at IF=200mA
Min
R JA
VF
Typ
Max
1701)
1.2
Units
K /W
V
1) Valid provided that a distance of 8mm from case is kept at ambient temperature.
JINAN JINGHENG ELECTRONICS CO., LTD.
10-12
HTTP://WWW.JINGHENGGROUP.COM
1N4727 ...1N4764 SILICON PLANAR ZENER DIODES
Type
Nominal
Zener
Voltage 1)
Test
Current
at
IZT
VZ
1N4727
1N4728
1N4729
1N4730
1N4731
1N4732
1N4733
1N4734
1N4735
1N4736
1N4737
1N4738
1N4739
1N4740
1N4741
1N4742
1N4743
1N4744
1N4745
1N4746
1N4747
1N4748
1N4749
1N4750
1N4751
1N4752
1N4753
1N4754
1N4755
1N4756
1N4757
1N4758
1N4759
1N4760
1N4761
1N4762
1N4763
1N4764
Maximum Zener Impedance
at
IZT
V
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
IZT mA
83
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7
6.5
6
5.5
5
4.5
4
3.7
3.3
3
2.8
2.5
at
IZK
ZZK
ZZT
10
10
10
9
9
8
7
5
2
3.5
4
4.5
5
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
2)
400
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1,000
1,000
1,000
1,000
1,500
1,500
1,500
2,000
2,000
2,000
2,000
3,000
3,000
3,000
Maximum
reverse leakage current
Surge
current 3)
Maximum
regulator
Current 4)
at TA=25℃
IR
mA
A
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
150
150
100
100
50
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
at VR
V
1
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56
62.2
69.2
76
IR
mA
IZM
mA
1,375
1,375
1,260
1,190
1,070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
275
275
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
25
23
22
19
18
16
14
13
12
11
10
9
Notes: 1) The Zener impedance is derived from the 1KHz AC voltage which results when an AC current having an RMS value equal to 10% of the Zener current (IZT or IZK) is
superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units.
2) Valid provided that electrodes at a distance of 10mm from case are kept at ambient temperature.
3) Measured under thermal equilibrium and DC test conditions.
4)The rating listed in the electrical characteristics table is maximum peak,non-repetitive,reverse surge current of ½ square wave or equivalent sine wave pulse
of 1/120 second duration superimposed on the test current Izt.
5)Tested with pulses tp=20ms.
JINAN JINGHENG ELECTRONICS CO., LTD.
10-13
HTTP://WWW.JINGHENGGROUP.COM
0
0
10
20
30
JINAN JINGHENG ELECTRONICS CO., LTD.
20
40
50
10-14
60
70
8
10
80
90
IN 4764
7
IN 4738
IN 4741
IN 4740
IN 4739
30
IN 4763
6
IN 4762
5
IN 4737
IN 4736
40
IN 4761
4
IN 4758
50
IN 4760
30
3
IN 4757
50
2
IN 4755
40
1
IN 4756
60
IN 4735
IN 4 7 34
IN 4 7 33
IN 47 31
IN 47 32
IN 47 30 IN 47
29
IN 47 27
IN 47 2 8
70
IN 4750
IN 4751
IN 4752
80
IN 4759
Iz
0
IN 4746
IN 4747
IN 4748
IN 4749
90
IN 4753
IN 4754
mA
IN 4743
IN 4744
0
IN 4745
Iz
IN 4742
1N4727 ...1N4764 SILICON PLANAR ZENER DIODES
T j=constant(pulsed)
Breakdowm characteristics
mA
100
IN...
T j=25
9
10
T j=25
100
o
o
C
20
10
11
12
Vz
IN...
C
110
Vz
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1N4727 ...1N4764 SILICON PLANAR ZENER DIODES
Pd. Total Power Dissipation (w)
FIG.1-POWER DISSIPATION VS AMBIENT TEMPERATURE
FIG.2-TYPICAL THERMAL RESISTANCE VS LEAD LENGTH
1.0
250
0.8
200
0.6
150
100
0.4
50
0.2
0
0
0
0
100
5
200
FIG.3-JUNCTION CAPACITANCE VS ZENER VOLTAGE
20
25
1000
Differential Zener Impedance (Ω)
f=1MHz
T A =25°C
100
V R =0V
V R =2V
V R =5V
V R =20V
V R =30V
10
Iz=1mA
10
20
30
40
50
60
5mA
10mA
20mA
10
1
10
Vz, Zener Voltage (V)
Vz, Zener Voltage (V)
JINAN JINGHENG ELECTRONICS CO., LTD.
2mA
100
1
0
30
FIG.4-TYPICAL ZENER IMPEDANCE VS ZENER VOLTAGE
1000
Cj,Diode capacitance (pF)
15
L, Lead Length (mm)
T A , Ambient temperature
1
10
10-15
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100