HIT647 Silicon PNP Epitaxial REJ03G1504-0200 Rev.2.00 Mar 05, 2007 Features • Low frequency power amplifier • Complementary pair with HIT667 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC IC (peak) *1 PC Ratings -120 -100 -6 -1.0 -2.0 0.9 Unit V V V A A W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20% Rev.2.00 Mar 05, 2007 page 1 of 4 HIT647 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Rev.2.00 Mar 05, 2007 page 2 of 4 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Min -120 -100 -6 — — 140 40 — — Typ — — — — — — — — — Max — — — -500 -500 350 — -0.5 -1.1 Unit V V V nA nA — — V V Test conditions IC = -100 µA, IE = 0 IC = -10 mA, RBE = ∞ IE = -100 µA, IC = 0 VCB = -120 V, IE = 0 VEB = -6 V, IC = 0 VCE = -2 V, IC = -150 mA VCE = -5 V, IC = -1 A IC = -500 mA, IB = -50 mA IC = -500 mA, IB = -50 mA HIT647 Main Characteristics Typical Output Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 -5 mA -0.6 C = 0. 9 -40 mA -60 mA -80 mA -100 mA -2 mA W -1 mA -0.2 0 150 -0.5 mA IB = 0 -2 0 -4 -6 -8 -10 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 600 VCE = -5 V Pulse -200 DC Current Transfer Ratio hFE Collector Current IC (mA) P -0.4 -500 Ta = 75°C -100 25°C -50 -20 -25°C -10 -5 -2 -1 -10 mA -0.8 0 -0.2 -0.4 -0.6 -0.8 VCE = -5 V Pulse 500 400 300 Ta = 75°C -25°C 100 0 -1.0 -1 -3 Base to Emitter Voltage VBE (V) Base to Emitter Saturation Voltage VBE(sat) (V) -1.0 -0.20 IC = 10 IB -25°C 25°C Ta = 75°C Pulse VBE(sat) -0.6 0 -1 -0.08 -0.04 VCE(sat) -10 -100 Collector Current IC (mA) Rev.2.00 Mar 05, 2007 page 3 of 4 -0.16 -0.12 Ta = 75°C 25°C -25°C -0.4 -0.2 -10 -30 -100 -300 -1000 Collector Current IC (mA) Base to Emitter & Collector to Emitter Saturation Voltage vs. Collector Current -0.8 25°C 200 0 -1000 Collector to Emitter Saturation Voltage VCE(sat) (V) 0 -30 mA -20 mA -1.0 Collector Current IC (mA) Collector Power Dissipation Pc (W) Maximum Collector Dissipation Curve HIT647 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name Quantity Shipping Container HIT647-EQ 2500 pcs Bulk, Vinyl Bag HIT647TZ-EQ 2500 pcs Hold Box, Radial Taping Note: This product is designed for consumer use and not for automotive. Rev.2.00 Mar 05, 2007 page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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