Transistors SMD Type PNP Transistors 2SB772 ■ Features ● PNP transistor High current output up to 3A 1.70 0.1 ● Low Saturation Voltage ● Complement to 2SD882 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector to Base Voltage Parameter VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current to Continuous IC -3 A Collector Dissipation Pc 0.5 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=-100uA ,IE=0 -40 V Collector-emitter breakdown voltage VCEO IC= -10 mA , IB=0 -30 V -6 Emitter-base breakdown voltage VEBO IE= -100 uA ,IC=0 Collector cut-off current ICBO VCB=-40 V , IE=0 -1 μA Emitter cut-off current IEBO VEB=-6V , IC=0 -1 μA DC current gain hFE VCE= -2V, IC= -1A 60 VCE=-2V, IC= -100mA 32 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=- 0.2A Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A Transition frequency fT V 400 -0.5 -1.5 VCE=-5 V, IC=-0.1mA,f = 10MHz 50 V V MHz ■ Classification of hfe(1) Type 2SB772-R 2SB772-Q 2SB772-P 2SB772-E Range 60-120 100-200 160-320 200-400 Marking 772R 772Q 772P 772E www.kexin.com.cn 1 Transistors SMD Type 2SB772 Typical Characteristics 2 www.kexin.com.cn Transistors SMD Type SMD Type 2SB772 www.kexin.com.cn 3