Transistors SMD Type PNP Transistors 2SB1198K SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● Collector Emitter Voltage VCEO=-80V 1 0.55 ● Collector Current Capability IC=-0.5A +0.1 1.3 -0.1 +0.1 2.4 -0.1 ■ Features 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● Complementary to 2SD1782K 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -2 mA， IB=0 -80 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -80 V , IE=0 -0.5 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.5 Unit V uA Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 DC current gain hFE VCE= -3V, IC= -100mA Collector output capacitance Cob VCB= -10V,IE=0,f=1MHz 11 pF VCE= -10V,IE=50mA,f=100MHz 180 MHz Transition frequency fT 120 V 390 ■ Classification of hfe Type 2SB1198K-Q 2SB1198K-R Range 120-270 180-390 Marking AKQ AKR www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1198K ■ Typical Characterisitics 2 www.kexin.com.cn