Diodes SMD Type TVS Diodes ESD8L3.3 SOD882 Unit:mm ■ Features ● Ultra Low Capacitance 0.5 pF ● Low Clamping Voltage ● Stand−off Voltage: 3.3 V ● Response Time is Typically < 1.0 ns ● IEC61000−4−2 Level 4 ESD Protection 1 1 2 2 PIN 1. CATHODE 2. ANODE ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol IEC 61000−4−2 (ESD) Contact IEC 61000−4−2 (ESD) Air Rating Unit ±10 ESD KV ±15 Total Power Dissipation on FR−5 Board (Note 1) Pd 150 Junction Temperature TJ 125 Lead Solder Temperature (10 Second Duration) TL 260 Storage Temperature range Tstg -55 to 150 mW ℃ Note.1: FR−5 = 1.0 x 0.75 x 0.62 in. ■ Electrical Characteristics (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types) Device ESD8L3.3 Device Marking P C (pF) VC (V) @ IPP = 1 A (Note 2) V RWM (V) IR ( uA) @ VRWM VBR (V) @ IT (Note 1) IT Max Max Min mA Typ Max Max 3.3 1.0 4.8 1.0 0.5 0.9 12 VC Per IEC61000−4−2 (Note 3) Figures 1 and 2 See Below Note.1. V BR is measured with a pulse test current IT at an ambient temperature of 25°C. 2. Surge current waveform per Figure 5. 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. www.kexin.com.cn 1 Diodes SMD Type TVS Diodes ESD8L3.3 ■ Electrical Characteristics Ta = 25℃ Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C I Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. VC VBR VRWM IR VF IT V IPP Uni −Directional TVS ■ Typical Characterisitics Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000 −4−2 2 www.kexin.com.cn Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000 −4−2 Diodes SMD Type TVS Diodes ESD8L3.3 ■ Typical Characterisitics IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000 −4−2 Spec ESD Gun Oscilloscope TVS 50 Cable 50 Figure 4. Diagram of ESD Test Setup % OF PEAK PULSE CURRENT 100 tr 90 PEAK VALUE I RSM @ 8 s PULSE WIDTH (t P ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 80 70 60 HALF VALUE I RSM /2 @ 20us 50 40 30 tP 20 10 0 0 20 40 t, TIME ( us) 60 80 Figure 5. 8 X 20 us Pulse Waveform www.kexin.com.cn 3