Diodes SMD Type Schottky Diodes SS32FH ~ SS310FH 1 ■ Features 2 ● For surface mounted applications. ● Low profile package. PIN DESCRIPTION 1 Cathode 2 Anode Weight：17.6mg，0.00062 o z Simplified outline SOD-123FH ● Metal silicon junction, majority carrier conduction. ● Low power loss, high efficiency. ● High current capability, low forward voltage drop. ● High surge capability. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol SS32 SS33 SS34 SS35 SS36 SS38 SS39 SS310 FH FH FH FH FH FH FH FH Peak Repetitive Peak Reverse Voltage VRRM 20 30 40 50 60 80 90 100 RMS Reverse Voltage VRMS 14 21 28 35 42 56 63 70 20 30 40 50 60 80 90 100 DC Blocking Voltage VR Average Rectified Current IFAV 3 Peak Forward Surge Current IFSM 70 Forward Voltage *1 0.55 VF Reverse Voltage Leakage Current Ta = 25℃ *1 Ta = 70℃ *1 Junction Capacitance *2 Junction Temperature 0.85 10 500 300 55 RθJA -65 to 150 -65 to 150 Tstg V mA pF ℃/W -65 to 125 TJ Storage Temperature range 0.7 20 Cj Thermal Resistance Junction to Ambient *3 V A 0.5 IR Unit ℃ *1. Pulse test: 300μS pulse width, 1% duty cycle. *2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. *3. P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas. ■ Marking NO. SS32FH SS33FH SS34FH SS35FH SS36FH SS38FH Marking S32 S33 S34 S35 S36 S38 SS39FH SS310FH S39 S310 www.kexin.com.cn 1 Diodes SMD Type Schottky Diodes SS32FH ~ SS310FH FIG. 1- FORWARD CURRENT DERATING CURVE 3.0 2.4 Single Phase Half Wave 60Hz Resistive or inductive Load 1.8 1.2 SS32FH-SS34FH SS35FH-SS310FH 0.6 0 0 25 50 75 100 125 150 175 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT £PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES ■ Typical Characterisitics 100 80 60 40 20 0 AMBIENT TEMPERATURE, C 50 1 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 1 SS32FH-SS34FH SS35FH-SS36FH SS38FH-SS310FH 0.1 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ=100 C 10 TJ=75 C 1 0.1 TJ=25 C 0.01 0 100 1,000 10.0 0.01 10 NUMBER OF CYCLES AT 60 Hz FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS TJ=25 C INSTANTANEOUS FORWARD CURRENT,AMPERES 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% 1.6 INSTANTANEOUS FORWARD VOLEAGE, VOLTS FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 TJ=25 C 100 SS32FH-SS34FH SS35FH-SS310FH 10 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 2 www.kexin.com.cn FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, C/W 2000 100 10 1 0.1 0.01 0.1 1 10 100 t,PULSE DURATION,sec. 100 Diodes SMD Type Schottky Diodes SS32FH ~ SS310FH ■ Typical Application Plastic surface mounted package; 2 leads C A ∠A LL R O U N D HE VM e A E D pad e E A pad bottom d UNIT D d E e HE max 1.08 0.16 2.9 3.3 1.8 1.0 3.8 min 0.95 0.14 2.6 3.0 1.5 0.7 3.5 max 42.5 6.3 114 130 70 39 150 min 37.4 5.5 102 118 60 28 138 1.1 (43) 2.0 (79) ∠ 5° 1.1 (43) 1.1 (43) mil C 1.8 (71) mm A 0.8 (32) 0.8 (32) Unit： mm (mil) www.kexin.com.cn 3