Diodes SMD Type Schottky Diodes 1N5820 ~ 1N5822 DO-214AC(SMA) Unit: mm 4.32 4.12 4.597 3.988 2.126 1.397 ■ Features ● Low power loss, high efficiency 1 2 ● High current capability, low forward voltage drop 2.896 2.22 2.489 2.02 2.75 2.55 5.87 5.67 5.668 4.925 ● High surge capability ● Guardring for overvoltage protection Recommended Land Pattern 2.438 1.981 1.524 0.762 0.203 0.051 0.305 0.152 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 1N5820 1N5821 1N5822 Repetitive Peak Reverse Voltage VRRM 20 30 40 RMS Voltage VRMS 14 21 28 Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 Maximum DC Blocking Voltage VDC 20 30 40 475 500 525 850 900 950 Maximum Instantaneous Forward Voltage at 3.0 *1 Maximum Instantaneous Forward Voltage at 9.4 *1 VF Averaged Forward Current.TL=95℃ IFAV 3 Peak Forward Surge Current TL=75℃ IFSM 80 Maximum DC Reverse Current Ta=25℃ Ta=100℃ *1 IR 2 20 Thermal Resistance From Junction to Ambient RθJA 40 Thermal Resistance From Junction to Lead RθJL 10 Junction Temperature Tj 125 Storage Temperature Tstg -65 to 125 Unit V mV A mA °C/W ℃ *1:Pulse test: 300ms pulse width, 1% duty cycle ■ Marking NO. 1N5820 1N5821 1N5822 Marking SS32 SS33 SS34 www.kexin.com.cn 1 Diodes SMD Type Schottky Diodes 1N5820 ~ 1N5822 ■ Typical Characterisitics FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD CURRENT, AMPERES 4 RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTH 3 2 1 0 0 20 40 60 80 100 120 140 PEAK FORWARD SURGE CURRENT, AMPERES FIG. 1 - FORWARD CURRENT DERATING CURVE LEAD TEMPERATURE, °C 80 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 70 60 50 40 30 20 10 1 10 100 NUMBER OF CYCLES AT 60 HZ FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 50 10 PULSE WIDTH=300µs 1% DUTY CYCLE TJ=125°C TJ = 125°C 1 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES 10 TJ=25°C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 TJ=75°C 0.1 0.001 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 10 REVERSE VOLTAGE, VOLTS 2 www.kexin.com.cn 100 TRANSIENT THERMAL IMPEDANCE, °C/W JUNCTION CAPACITANCE, pF TJ=25°C f=1.0 MHz Vsig=50mVp-p 1 20 40 60 80 100 FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 0.1 0 PERCENT OF RATED PEAK REVERSE VOLTAGE, % FIG. 5 - TYPICAL JUNCTION CAPACITANCE 1,000 TJ=25°C 0.01 100 10 1 0.1 0 0.1 1 t, PULSE DURATION, sec. 10 100