SMD Type Diodes

Diodes
SMD Type
Schottky Diodes
1N5820 ~ 1N5822
DO-214AC(SMA)
Unit: mm
4.32
4.12
4.597
3.988
2.126
1.397
■ Features
● Low power loss, high efficiency
1
2
● High current capability, low forward voltage drop
2.896 2.22
2.489 2.02
2.75
2.55
5.87
5.67
5.668
4.925
● High surge capability
● Guardring for overvoltage protection
Recommended
Land Pattern
2.438
1.981
1.524
0.762
0.203
0.051
0.305
0.152
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
1N5820
1N5821
1N5822
Repetitive Peak Reverse Voltage
VRRM
20
30
40
RMS Voltage
VRMS
14
21
28
Non-Repetitive Peak Reverse Voltage
VRSM
24
36
48
Maximum DC Blocking Voltage
VDC
20
30
40
475
500
525
850
900
950
Maximum Instantaneous Forward Voltage at 3.0 *1
Maximum Instantaneous Forward Voltage at 9.4 *1
VF
Averaged Forward Current.TL=95℃
IFAV
3
Peak Forward Surge Current TL=75℃
IFSM
80
Maximum DC Reverse Current Ta=25℃
Ta=100℃
*1
IR
2
20
Thermal Resistance From Junction to Ambient
RθJA
40
Thermal Resistance From Junction to Lead
RθJL
10
Junction Temperature
Tj
125
Storage Temperature
Tstg
-65 to 125
Unit
V
mV
A
mA
°C/W
℃
*1:Pulse test: 300ms pulse width, 1% duty cycle
■ Marking
NO.
1N5820
1N5821
1N5822
Marking
SS32
SS33
SS34
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1
Diodes
SMD Type
Schottky Diodes
1N5820 ~ 1N5822
■ Typical Characterisitics
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
AVERAGE FORWARD CURRENT,
AMPERES
4
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
3
2
1
0
0
20
40
60
80
100
120
140
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1 - FORWARD CURRENT DERATING CURVE
LEAD TEMPERATURE, °C
80
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
70
60
50
40
30
20
10
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
50
10
PULSE WIDTH=300µs
1% DUTY CYCLE
TJ=125°C
TJ = 125°C
1
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
10
TJ=25°C
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
TJ=75°C
0.1
0.001
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
10
REVERSE VOLTAGE, VOLTS
2
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100
TRANSIENT THERMAL IMPEDANCE, °C/W
JUNCTION CAPACITANCE, pF
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
1
20
40
60
80
100
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
0.1
0
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
1,000
TJ=25°C
0.01
100
10
1
0.1
0
0.1
1
t, PULSE DURATION, sec.
10
100