Diodes SMD Type Bridge Rectifiers SBR05M100BLP DFN3030-4 ■ Features ● Ultra Low Leakage Current ● Excellent High Temperature Stability ● Patented Super Barrier Rectifier Technology 1 4 2 3 ● Soft, Fast Switching Capability Top View Device Schematic ● 150ºC Operating Junction Temperature ~ ● Lead Free Finish, RoHS Compliant, “Green” Device N/C 1 + 2 4 - 3 ~ Top View Pin Configuration ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage Rating Unit 100 V VRM RMS Reverse Voltage Average Rectified Output Currents Non-Repetitive Peak Forward Surge Current @ 8.3ms Power Dissipation (Note.1) Thermal Resistance Junction to Ambient (Note.2) Junction Temperature Storage Temperature range VR(RMS) 70 IO 500 mA IFSM 8 A Pd 560 mW 222 RθJA ℃/W 149 TJ 150 Tstg -55 to 150 ℃ Note.1: FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per Note.2: Polymide PCB, 2 oz. copper; minimum recommended pad layout per ■ Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage Symbol VR VF Reverse voltage leakage current IR Test Conditions IR= 250 uA Min Typ Max Unit 100 IF= 0.25 A,TJ=25℃ 0.6 IF= 0.5 A,TJ=25℃ 0.73 IF= 0.5 A,TJ=125℃ 0.63 VR= 100 V, TJ=25℃ 25 VR= 100 V, TJ=125℃ 250 V uA ■ Marking Marking ** DA www.kexin.com.cn 1 Diodes SMD Type Bridge Rectifiers SBR05M100BLP ■ Typical Characterisitics -IF, INSTANTANEOUS FORWARD CURRENT (mA) 0.9 PD, POWER DISSIPATION (W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1,000 0.5 1 1.5 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 1 Forward Power Dissipation TA = 85°C 1 0.1 TA = 25°C 0 10 20 30 40 50 60 70 80 90 100 -VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics TA, DERATED AMBIENT TEMPERATURE (°C) 150 125 100 75 50 25 0 10 20 30 40 50 60 70 80 90 100 110 VR, DC REVERSE VOLTAGE (V) Fig. 5 Operating Temperature Derating www.kexin.com.cn IF(AV), AVERAGE FORWARD CURRENT (A) -IR, INSTANTANEOUS REVERSE CURRENT (µA) TA = 125°C 10 175 2 TA = 85°C 10 TA = 25°C 1 0.1 0.01 0.8 100 0 T A = 125°C 0 100 200 300 400 500 600 700 800 900 -VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2 Typical Forward Characteristics 1,000 0.01 100 0.7 0.6 0.5 Per Diode 0.4 0.3 Per Diode 0.2 0.1 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Forward Current Derating Curve 175 Diodes SMD Type Package Outline Dimensions DFN3030-4 A3 A A1 Side View D e E3 E H D3 I E2 D2 J K D1 E1 M L Z b Bottom View DFN3030-4 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 b 0.35 0.45 0.40 D 2.90 3.10 3.00 D1 1.075 1.275 1.175 D2 0.925 1.125 1.025 D3 1.075 1.275 1.175 E 2.90 3.10 3.00 e 1.30 E1 0.615 0.815 0.715 E2 1.78 1.98 1.88 E3 0.715 0.915 0.815 H 0.05 0.15 0.10 I 0.20 0.30 0.25 J 0.185 0.285 0.235 K 0.065 0.165 0.115 L 0.30 0.60 0.45 M 0.05 0.15 0.10 Z 0.65 All Dimensions in mm Suggested Pad Layout C Y3 (2x) G6 G4 Y2 X3 G5 Y1 G7 X1 X (4x) G1 G3 R Y G2 X2 G8 Dimensions C G1 G2 G3 G4 G5 G6 G7 G8 R X X1 X2 X3 Y Y1 Y2 Y3 Value (in mm) 1.300 0.100 0.150 0.830 0.115 0.135 0.170 0.500 0.500 0.150 0.500 1.375 1.225 1.175 1.980 1.015 0.715 0.650 www.kexin.com.cn 3