SMD Type Diodes

Diodes
SMD Type
Bridge Rectifiers
SBR05M100BLP
DFN3030-4
■ Features
● Ultra Low Leakage Current
● Excellent High Temperature Stability
● Patented Super Barrier Rectifier Technology
1
4
2
3
● Soft, Fast Switching Capability
Top View
Device Schematic
● 150ºC Operating Junction Temperature
~
● Lead Free Finish, RoHS Compliant, “Green” Device
N/C
1
+ 2
4
-
3
~
Top View
Pin Configuration
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
Rating
Unit
100
V
VRM
RMS Reverse Voltage
Average Rectified Output Currents
Non-Repetitive Peak Forward Surge Current @ 8.3ms
Power Dissipation
(Note.1)
Thermal Resistance Junction to Ambient
(Note.2)
Junction Temperature
Storage Temperature range
VR(RMS)
70
IO
500
mA
IFSM
8
A
Pd
560
mW
222
RθJA
℃/W
149
TJ
150
Tstg
-55 to 150
℃
Note.1: FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per
Note.2: Polymide PCB, 2 oz. copper; minimum recommended pad layout per
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Symbol
VR
VF
Reverse voltage leakage current
IR
Test Conditions
IR= 250 uA
Min
Typ
Max
Unit
100
IF= 0.25 A,TJ=25℃
0.6
IF= 0.5 A,TJ=25℃
0.73
IF= 0.5 A,TJ=125℃
0.63
VR= 100 V, TJ=25℃
25
VR= 100 V, TJ=125℃
250
V
uA
■ Marking
Marking
**
DA
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Diodes
SMD Type
Bridge Rectifiers
SBR05M100BLP
■ Typical Characterisitics
-IF, INSTANTANEOUS FORWARD CURRENT (mA)
0.9
PD, POWER DISSIPATION (W)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1,000
0.5
1
1.5
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
TA = 85°C
1
0.1
TA = 25°C
0 10 20 30 40 50 60 70 80 90 100
-VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
TA, DERATED AMBIENT TEMPERATURE (°C)
150
125
100
75
50
25
0
10 20 30 40 50 60 70 80 90 100 110
VR, DC REVERSE VOLTAGE (V)
Fig. 5 Operating Temperature Derating
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IF(AV), AVERAGE FORWARD CURRENT (A)
-IR, INSTANTANEOUS REVERSE CURRENT (µA)
TA = 125°C
10
175
2
TA = 85°C
10
TA = 25°C
1
0.1
0.01
0.8
100
0
T A = 125°C
0 100 200 300 400 500 600 700 800 900
-VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
1,000
0.01
100
0.7
0.6
0.5
Per Diode
0.4
0.3
Per Diode
0.2
0.1
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 Forward Current Derating Curve
175
Diodes
SMD Type
Package Outline Dimensions
DFN3030-4
A3
A
A1
Side View
D
e
E3
E
H
D3
I
E2
D2
J
K
D1
E1
M
L
Z
b
Bottom View
DFN3030-4
Dim Min Max Typ
A
0.57 0.63 0.60
A1
0
0.05 0.02
A3
0.15
b
0.35 0.45 0.40
D
2.90 3.10 3.00
D1 1.075 1.275 1.175
D2 0.925 1.125 1.025
D3 1.075 1.275 1.175
E
2.90 3.10 3.00
e
1.30
E1 0.615 0.815 0.715
E2
1.78 1.98 1.88
E3 0.715 0.915 0.815
H
0.05 0.15 0.10
I
0.20 0.30 0.25
J
0.185 0.285 0.235
K 0.065 0.165 0.115
L
0.30 0.60 0.45
M
0.05 0.15 0.10
Z
0.65
All Dimensions in mm
Suggested Pad Layout
C
Y3 (2x)
G6
G4
Y2
X3
G5
Y1
G7
X1
X (4x)
G1
G3
R
Y
G2
X2
G8
Dimensions
C
G1
G2
G3
G4
G5
G6
G7
G8
R
X
X1
X2
X3
Y
Y1
Y2
Y3
Value (in mm)
1.300
0.100
0.150
0.830
0.115
0.135
0.170
0.500
0.500
0.150
0.500
1.375
1.225
1.175
1.980
1.015
0.715
0.650
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