Diodes SMD Type Schottky Diodes RB411D (KB411D) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● Low reverse current and low forward voltage 1 ● High reliability 0.55 ● Small surface mounting type +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating VRM 40 RMS reverse voltage VR(RMS) 28 DC Blocking Voltage VR 20 Average Rectified Output Current Io 0.5 Peak Forward Surge Current IFM 3 Peak Reverse Voltage V A PD 200 mW RθJA 500 ℃/W TJ 125 Tstg -55 to 150 Power Dissipation Thermal Resistance Junction to Ambient Unit Junction Temperature Storage Temperature range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Symbol VR Test Conditions Max Unit IF= 10mA 0.3 V IF= 500mA 0.5 30 IR= 100 uA Forward voltage VF Reverse voltage leakage current IR VR=10 V Capacitance between terminals CT VR=10 V, f= 1 MHz Min Typ 40 20 uA pF ■ Marking Marking D3E www.kexin.com.cn 1 Diodes SMD Type Schottky Diodes RB411D (KB411D) ■ Typical Characterisitics Forward Characteristics Reverse 10 REVERSE CURRENT IR IF (mA) (mA) 100 10 1 T =2 a 5℃ T= a 10 0℃ FORWARD CURRENT Characteristics 100 500 1 Ta=100℃ 0.1 0.01 Ta=25℃ 1E-3 0.1 0 100 200 300 FORWARD VOLTAGE VF 400 1E-4 0.1 500 5 10 15 REVERSE VOLTAGE (mV) Capacitance Characteristics VR 20 (V) Power Derating Curve 160 250 Ta=25℃ f=1MHz (mW) 100 PD 200 120 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 140 80 60 40 100 50 20 0 0 5 10 15 20 REVERSE VOLTAGE 2 150 www.kexin.com.cn 25 VR (V) 30 35 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃) 125