MOSFET SMD Type P-Channel MOSFET KI007P-HF SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 65mΩ (VGS =-4.5V , ID=-1A) 1 ● RDS(ON) ＜ 100mΩ (VGS =-2.5V , ID=-0.5A) 0.55 ● ID =-3.5 A +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● VDS (V) =-12V 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 +0.2 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a 1.1 Pb−Free Lead Finish 0-0.1 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±12 ID 3.5 A PD 1 W Continuous Drain Current @ TJ=25℃ Power Dissipation Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=-12V, VGS=0V,TJ=25℃ Gate-Body leakage current IGSS VDS=0V, VGS=±12V VGS(th) VDS=VGS ID=-250μA Gate Threshold Voltage Static Drain-Source On-Resistance RDS(On) Min Typ Max Unit -1 uA ±100 nA -1.3 V -12 -0.5 V VGS=-4.5V, ID=-1A 65 VGS=-2.5V, ID=-0.5A 100 VGS=-4.5V, ID=-3A 77 VGS=-2.5V, ID=-2A 120 mΩ ■ Marking Marking 007P F www.kexin.com.cn 1