INCHANGE MOSFET IRF630F N-channel mosfet transistor Features ・With TO-220F package ・Low on-stateand thermal resistance ・Fast switching ・VDSS=200V; RDS(ON)≤0.4Ω;ID=9A ・1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 200 V VGS Gate-source voltage ±20 V Drain Current-continuous@ TC=25℃ 9 A Total Dissipation@TC=25℃ 35 W Operating Junction temperature 150 ℃ -65~150 ℃ ID Ptot Tj Tstg Storage temperature TO-220F Electrical Characteristics Tc=25℃ SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-source breakdown voltage VGS=0; ID=0.25mA 200 VGS(TH) Gate threshold voltage VDS= VGS; ID=1mA 2 RDS(ON) Drain-source on-stage resistance IGSS MAX UNIT V 4 V VGS=10V; ID=5.4A 400 mΩ Gate source leakage current VGS=±20V;VDS=0 ±100 nA IDSS Zero gate voltage drain current VDS=200V; VGS=0 10 uA VSD Diode forward voltage IF=9A; VGS=0 1.2 V