JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-02C Plastic-Encapsulate Diodes ESDU5V0F1 ESD Protection Diode WBFBP-02C DESCRIPTION The ESDU5V0F1 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. (1.0×0.6×0.5) unit: mm FEATURES z Stand−off Voltage: 5 V z Low Leakage z Response Time is Typically < 1 ns z ESD Rating of Class 3 (> 12 kV) Per Human Body Model z IEC61000−4−2 Level 4 ESD Protection z These are Pb−Free Devices MARKING: AE AE TOP VIEW Maximum Ratings @Ta=25℃ Parameter Air/ Contact IEC61000−4−2(ESD) ESD voltage Symbol Limit ±15 kV 12 kV 400 V IPP 10 A TL 260 ℃ Tj, Tstg -55 ~ +150 ℃ Per Human Body Model Per Machine Model Peak pulse current (Note 1) Lead solder temperature − maximum (10 second duration) Junction and storage temperature range Unit 1. Non-repetitive current pulse 8/20 us exponential decay waveform according to IEC 61000-4-5. C,Dec,2012 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C Max. Capacitance @VR=0 and f =1MHz ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) Device* ESDU5V0F1 Device Marking VRWM IR (μA) VBR (V) IT MAX VC (V) (V) @ VRWM @ IT(Note 2) （mA) IPP(A) @Max IPP Max Max - - Max AE 5 1 Min 5.4 Max 9.4 1 1 10 C (pF)@ VR=0V,f=1MHz Typ 0.5 Max 0.9 *Other voltages available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. C,Dec,2012 Typical Characteristics Forward Characteristics Reverse 100 Characteristics 100 80 1 T 60 a T= a 25 ℃ REVERSE CURRENT IR Ta =2 5℃ Ta =1 00 ℃ 10 =1 00 ℃ (mA) (mA) IF FORWARD CURRENT ESDU5V0F1 40 20 0.1 400 500 600 700 800 FORWARD VOLTAGE 900 VF 1000 0 1100 5 6 7 8 REVERSE VOLTAGE (mV) VC ---- IPP 16 VR 10 (V) VF---- IF 10 Ta=25℃ tp=8/20us Ta=25℃ tp=8/20us 15 9 FORWARD VOLTAGE VF(V) CLAMPING VOLTAGE VC(V) 8 14 13 12 11 10 6 4 2 9 8 0 1 2 3 4 5 6 7 0 8 0 1 2 3 4 5 6 7 8 FORWARD CURRENT IF(A) REVERSE PEAK PULSE CURRENT IPP(A) Capacitance Characteristics Power Derating Curve 1.0 125 Ta=25℃ 100 PD (mW) 0.8 0.6 75 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 0.4 0.2 0.0 0 1 REVERSE VOLTAGE 2 VR 3 (V) 50 25 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) C,Dec,2012