SOD-143 Plastic-Encapsulate Diodes

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-143 Plastic-Encapsulate Diodes
CESDLC5V0G3
Low Capacitance for ESD Protection
SOT-143
DESCRIPTION
The CESDLC5V0G3 is designed to protect voltage sensitive components from
ESD. Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD. Because of its
small size, it is suited for use in cellular phones, MP3 players, digital cameras
and many other portable applications where board space is at a premium.
FEATURES
z
Low Leakage Current <55nA @ 5 Volts
z
Small Package
z
Low Capacitance
z
Complies to USB 1.1 Low Speed & Full Speed Specifications
z
These are Pb-Free Devices
BENEFITS
z
Minimize Power Consumption of the System
z
Minimize PCB Board Space
TYPICAL APPLICATIONS
z
Instrumentation Equipment
z
Serial and Parallel Ports
z
Microprocessor Based Equipment
z
Notebooks, Desktops, Servers
z
Cellular and Portable Equipment
MARKING:1C
B,Jul,2012
ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current (Note 1)
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Ratings (Ta=25℃ unless otherwise noted)
Parameter
Limit
Symbol
Steady State Power (Note 2)
Thermal Resistance Junction−to−Ambient
Above 25 °C, derate
Maximum Junction Temperature
Unit
PD
200
mW
RΘJA
625
℃/W
Tj
150
℃
-55 ~ +150
℃
Operating Junction and Storage Temperature Range
Tj, Tstg
Lead Solder Temperature (10 Seconds Duration)
TL
260
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress
ratings only. Functional operation above the recommended. Operating conditions is not implied.
Extended exposure to stresses above the recommended operating conditions may affect device
reliability.
ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
Device
CESDLC5V0G3
Device
Marking
1C
Breakdown
voltage
VBR @ 1mA(Volts)
Leakage
current
IRM @ VRM
Capacitance
VC
Max @IPP
Min
Mon
Max
VRWM
IRWM
(μA)
VC
(V)
IPP
(A)
6.1
6.7
7.2
5.0
0.055
10.5
2
@VR=0V Bias
(pF)
(Note 3)
Max
17.5
Capacitance
@VR=3V Bias
(pF)
(Note 3)
Max
12
1. Non-repetitive current per Figure 1.
2. Mounted on FR-4 board with min pad.
3. Capacitance of one diode at f = 1MHz, Ta = 25°C
B,Jul,2012