JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-143 Plastic-Encapsulate Diodes CESDLC5V0G3 Low Capacitance for ESD Protection SOT-143 DESCRIPTION The CESDLC5V0G3 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. FEATURES z Low Leakage Current <55nA @ 5 Volts z Small Package z Low Capacitance z Complies to USB 1.1 Low Speed & Full Speed Specifications z These are Pb-Free Devices BENEFITS z Minimize Power Consumption of the System z Minimize PCB Board Space TYPICAL APPLICATIONS z Instrumentation Equipment z Serial and Parallel Ports z Microprocessor Based Equipment z Notebooks, Desktops, Servers z Cellular and Portable Equipment MARKING:1C B,Jul,2012 ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current (Note 1) VC Clamping Voltage @ IPP VRWM IR VBR IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Ratings (Ta=25℃ unless otherwise noted) Parameter Limit Symbol Steady State Power (Note 2) Thermal Resistance Junction−to−Ambient Above 25 °C, derate Maximum Junction Temperature Unit PD 200 mW RΘJA 625 ℃/W Tj 150 ℃ -55 ~ +150 ℃ Operating Junction and Storage Temperature Range Tj, Tstg Lead Solder Temperature (10 Seconds Duration) TL 260 ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types) Device CESDLC5V0G3 Device Marking 1C Breakdown voltage VBR @ 1mA(Volts) Leakage current IRM @ VRM Capacitance VC Max @IPP Min Mon Max VRWM IRWM (μA) VC (V) IPP (A) 6.1 6.7 7.2 5.0 0.055 10.5 2 @VR=0V Bias (pF) (Note 3) Max 17.5 Capacitance @VR=3V Bias (pF) (Note 3) Max 12 1. Non-repetitive current per Figure 1. 2. Mounted on FR-4 board with min pad. 3. Capacitance of one diode at f = 1MHz, Ta = 25°C B,Jul,2012